datasheet

SKKE 1200/18 H4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
A
Recitifier Diode
Tc = 85 °C
1376
Tc = 100 °C
1180
A
Tj = 25 °C
45000
A
Tj = 160 °C
40000
A
Tj = 25 °C
10125000
A²s
Tj = 160 °C
8000000
A²s
VRSM
1900
V
VRRM
1800
V
-40 ... 160
°C
-40 ... 125
°C
1 min
4000
V
1s
4800
V
IFAV
IFSM
i2t
SEMIPACK® 6
Rectifier Diode Modules
sin. 180°
10 ms
10 ms
Tj
Module
Tstg
SKKE 1200/18 H4
Visol
Features
Characteristics
• Precisious metal pressure contacts for
high reliability
• UL recognized, file no. E 63 532
Symbol
Typical Applications*
• Rectifiers
a.c.; 50 Hz; r.m.s.
Conditions
min.
typ.
max.
Unit
Diode
VF
Tj = 25 °C, IF = 3000 A
1.40
V
V(TO)
Tj = 160 °C
0.72
V
rT
Tj = 160 °C
0.19
m
IRD
Tj = 160 °C, VRD = VRRM
Rth(j-c)
Rth(j-c)
cont.
sin. 180°
60
mA
per chip
0.0385
K/W
per module
0.0385
K/W
per chip
0.04
K/W
per module
0.04
K/W
Module
Rth(c-s)
chip
0.01
K/W
module
0.01
K/W
Ms
to heatsink M6
5.1
6.9
Nm
Mt
to terminal M12
15.3
20.7
Nm
5 * 9,81
m/s²
a
w
2150
g
SKKE
© by SEMIKRON
Rev. 1 – 15.08.2012
1
SKKE 1200/18 H4
Fig. 11L: Power dissipation per diode vs. forward current
Fig. 11R: Power dissipation per diode vs. ambient
temperature
Fig. 14: Transient thermal impedance vs. time
Fig. 15: Forward characteristics
Fig. 16: Surge overload current vs. time
2
Rev. 1 – 15.08.2012
© by SEMIKRON
SKKE 1200/18 H4
SKKE
SEMIPACK 6
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1 – 15.08.2012
3
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