704

SENSITRON
SEMICONDUCTOR
SHD226007
TECHNICAL DATA
DATA SHEET 704, REV. A
N-Channel Enhancement Mode
Vertical DMOS FET







Free From Secondary Breakdown
Low Power Drive Requirement
Ease of Paralleling
Low CISS and Fast Switching Speeds
Excellent Thermal Stability
Integral Source-Drain Diode
High Input Impedance and High Gain
MAXIMUM RATINGS
ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
@ TC = 25C
LIMITED BY MAXIMUM RATED TJ
PULSED DRAIN CURRENT
@ T C = 25C
OPERATING AND STORAGE TEMPERATURE
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ TC = 25C
SYMBOL
VGS
ID
MIN.
-
TYP.
-
MAX.
20
100
UNITS
Volts
mA
IDM
TOP/TSTG
RJC
PD
-55
-
-
300
+150
23.5
5.3
mA (pk)
C
C/W
Watts
BVDSS
500
-
-
Volts
VGS(th)
2.0
-
4.0
Volts
RDS(ON)
-
45
40
-
60
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0mA
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 1.0mA
DRAIN TO SOURCE ON STATE RESISTANCE
.VGS = 5Vdc, ID = 50mA
VGS = 10Vdc, ID = 50mA
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = Max. Rating, VGS = 0Vdc
VDS = 0.8xMax. Rating
VGS = 0Vdc, TA = 125C
GATE TO BODY LEAKAGE CURRENT
VGS = 20Vdc,
VDS = 0
TURN ON DELAY TIME
VDD = 25V,
RISE TIME
ID = 150mA,
TURN OFF DELAY TIME
RG = 25
FALL TIME
FORWARD TRANSCONDUCTANCE
VDS = 25V, ID = 50mA
REVERSE RECOVERY TIME
IS = 0.5A,
REVERSE RECOVERY CHARGE
VGS = 0
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
VDS = 25V dc,
VGS = 0V dc,
f = 1 MHz
IDSS

10
1.0
A
mA
IGSS
-
-
100
nA
td(ON)
tr
td(OFF)
tf
gfs
-
-
nsec
50
100
10
15
10
10
-
mS (1/)
trr
-
300
-
nsec
Ciss
Coss
Crss
-
45
8.0
2.0
55
10
5.0
pF
©2014 Sensitron Semiconductor  221 WEST INDUSTRY COURT  DEER PARK, NY 11729-4681
 PHONE (631) 586-7600  FAX (631) 242-9798  www.sensitron.com  [email protected]
SHD226007
SENSITRON
DATA SHEET 704, REV. A
MECHANICAL DIMENSIONS: in Inches / mm
.150 (3.81
Dia.
.140 3.56)
.665 (16.89
.645 16.38)
.537 (13.64
.527 13.39)
1.132 (28.75
1.032 26.21)
1
.035 (0.89
.025 0.63)
3 Places
.200 (5.08
.190 4.82)
.420 (10.67
.410 10.41)
2
.045 (1.14
.035 0.89)
.430 (10.92
.410 10.41)
3
.100(2.54) BSC
2 Places
.120(3.05) BSC
TO-257
PINOUT TABLE
DEVICE TYPE
N CHANNEL MOSFET IN A
TO-257 PACKAGE
PIN 1
DRAIN
PIN 2
SOURCE
PIN 3
GATE
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datasheet(s).
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©2014 Sensitron Semiconductor  221 WEST INDUSTRY COURT  DEER PARK, NY 11729-4681
 PHONE (631) 586-7600  FAX (631) 242-9798  www.sensitron.com  [email protected]
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