SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER( EGF20A THRU EGF20M Datasheet )

EGF20A THRU EGF20M
SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 2.0 Amperes
EEDD SMB/DO-214AA
T
T
N
N
E
E
T
T
PPAA
FEATURES
0.150(3.80)
0.087(2.20)
0.130(3.30)
0.075(1.90)
*
*
*
*
*
*
*
GPRC (Glass Passivated Rectifier Chip) inside
Glass passivated cavity-free junction
Ideal for surface mount automotive applications
Superfast recovery time for high efficiency
Built-in strain relief
Easy pick and place
o
High temperature soldering guaranteed: 260 C/10 seconds,
at terminals
* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
0.187(4.75)
0.167(4.24)
0.016(0.40)
0.006(0.15)
0.096(2.43)
0.079(2.00)
0.050(1.40)
0.039(1.0)
0.236(6.00)
0.197(5.00)
MECHANICAL DATA
Case : JEDEC DO-214AA molded plastic over passivated chip
Terminals : Tin plated, solderable per MIL-STD-750,
Method 2026
Polarity : Color band denotes cathode end
Weight : 0.003 ounes , 0.093 gram
*Dimensions in inches and (millimeters)
TM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
EGF20
Ratings at 25 C ambient temperature
SYMBOLS
unless otherwise specified.
A
B
D
G
J
K
M
UNITS
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
Volts
VDC
50
100
200
400
600
800
1000
Volts
Maximum DC blocking voltage
o
Maximum average forward rectified current at TL=75 C
I (AV)
2.0
Amps
Peak forward surge current 8.3ms single half sine-wave
IFSM
65
60
Amps
1.7
Volts
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0 A
VF
o
1.25
IR
5
30
100
5
100
-
uA
Maximum reverse recovery time (NOTE 1)
trr
50
75
nS
Typical junction capacitance (NOTE 2)
CJ
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
o
TA=125 C
o
TA=150 C
1.0
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
R
R
JA
JL
TJ,TSTG
45
pF
75
20
o
C/W
o
-65 to +175
C
NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
REV. 0
Zowie Technology Corporation
RATINGS AND CHARACTERISTIC CURVES EGF20A THRU EGF20M
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
70
RESISTIVE OR
INDUCTIVE LOAD
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
2.0
1.5
1.0
0.5
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
60
50
40
EGF20A~EGF20G
EGF20J~EGF20M
30
20
10
0
0
25
50
75
100
125
150
1
175
10
100
LEAD TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
o
100
10.00
INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
PULSE WIDTH=300uS
1% DUTY CYCLE
1.00
0.10
EGF20J~EGF20M
EGF20G
EGF20A~EGF20D
o
TJ = 150 C
1
o
TJ = 25 C
0.1
0
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ = 125 C
10
1.6
1.8
20
40
60
80
100
110
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
JUNCTION CAPACITANCE, pF
FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE(oC/W)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
200
o
TJ = 25 C
100
60
40
20
10
6
4
2
10
1
0.1
1
.1
.2
.4
1.0
2
4
10
REVERSE VOLTAGE, VOLTS
REV. 0
100
20
40
100
0.01
0.10
1.0
10
100
t , PULSE DURATION, sec
Zowie Technology Corporation