SK 35 GAL 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Chopper IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP® 2 IGBT module SK 35 GAL 12T4 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V • Compact design • One screw mounting • Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) • High short circuit capability • Trench4 IGBT technology • CAL4F diode technology • VCE,sat with positive coefficient • UL recognized, file no. E 63 532 Typical Applications* • Inverter • Motor drive V 43 A 35 A 35 A 105 A -20 ... 20 V 10 µs -40 ... 175 °C Ts = 25 °C 38 A Ts = 70 °C 30 A 35 A Tj = 150 °C Chopper Diode IF Tj = 175 °C IFnom Features 1200 IFRM IFRM = 3 x IFnom 105 A IFSM 10 ms, sin 180°, Tj = 150 °C 170 A -40 ... 175 °C Ts = 25 °C 38 A Ts = 70 °C 30 A 35 A Tj Freewheeling Diode IF Tj = 175 °C IFnom IFRM IFRM = 3xIFnom 105 A IFSM 10 ms, sin 180°, Tj = 150 °C 170 A -40 ... 175 °C -40 ... 125 °C 2500 V Tj Module It(RMS) A Tstg Visol AC, sinusoidal, t = 1 min Characteristics Symbol Conditions Chopper IGBT IC = 35 A VCE(sat) VGE = 15 V chiplevel VCE0 chiplevel min. typ. max. Unit Tj = 25 °C 1.85 2.1 V Tj = 150 °C 2.25 2.45 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 30.0 34.3 m 44.3 47.1 m 5.8 6.5 V 0.062 0.186 mA rCE VGE = 15 V chiplevel VGE(th) VGE = VCE V, IC = 1.2 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG - 8 V...+ 15 V RGint Tj = 25 °C Tj = 150 °C Tj = 25 °C 5 Tj = 150 °C mA f = 1 MHz 1.95 nF f = 1 MHz 0.155 nF f = 1 MHz 0.115 nF 189 nC - GAL © by SEMIKRON Rev. 0 – 03.06.2013 1 SK 35 GAL 12T4 Characteristics Symbol Conditions min. typ. max. Unit Chopper IGBT td(on) Eoff VCC = 600 V IC = 35 A RG on = 22 RG off = 22 di/dton = 2900 A/µs di/dtoff = 2900 A/µs VGE = +15/-7 V Rth(j-s) per IGBT tr Eon td(off) tf SEMITOP® 2 IGBT module SK 35 GAL 12T4 Chopper Diode VF = VEC IF = 35 A VGE = 15 V chiplevel VF0 chiplevel rF Features • Compact design • One screw mounting • Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) • High short circuit capability • Trench4 IGBT technology • CAL4F diode technology • VCE,sat with positive coefficient • UL recognized, file no. E 63 532 IRRM Qrr Err Rth(j-s) chiplevel rF • Inverter • Motor drive IRRM Qrr Err Rth(j-s) 28 Tj = 150 °C 25 ns Tj = 150 °C 3.27 mJ Tj = 150 °C 303 ns chiplevel ns Tj = 150 °C 70 ns Tj = 150 °C 3.3 mJ 1.21 K/W Tj = 25 °C 2.3 2.62 V Tj = 150 °C 2.29 2.62 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 28.6 32.0 m 39.7 43.4 m Tj = 150 °C IF = 35 A Tj = 150 °C di/dtoff = 2900 A/µs T = 150 °C j VGE = -7 V Tj = 150 °C VR = 600 V per Diode Freewheeling Diode VF = VEC IF = 35 A VGE = 15 V chiplevel VF0 chiplevel Typical Applications* Tj = 150 °C 30 A 2 µC 1.46 mJ 1.55 K/W Tj = 25 °C 2.3 2.60 V Tj = 150 °C 2.29 2.62 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 28.6 32.0 m Tj = 150 °C 39.7 43.4 m IF = 35 A Tj = 150 °C di/dtoff = 2900 A/µs T = 150 °C j VGE = -7 V T j = 150 °C VR = 600 V per Diode 30 A 2 µC 1.46 mJ 1.55 K/W Module LCE nH Ts = 25 °C RCC'+EE' m m Ms Mounting torque to heatsink 1.8 2 Mt Nm Nm Nm w 19 g Temperature Sensor R100 B100/125 K GAL 2 Rev. 0 – 03.06.2013 © by SEMIKRON SK 35 GAL 12T4 Fig. 1: Typical IGBT output characteristics Fig. 2: Rated current vs. temperature IC = f (TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 6: Typ. gate charge characteristic Fig. 7: Typ. switching times vs. IC © by SEMIKRON Rev. 0 – 03.06.2013 3 SK 35 GAL 12T4 Fig. 8: Typ. switching times vs. gate resistor RG 4 Fig. 10: Typ. FWD diode forward characteristic Rev. 0 – 03.06.2013 © by SEMIKRON SK 35 GAL 12T4 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 0 – 03.06.2013 5