datasheet

SK 35 GAL 12T4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Chopper IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
ICnom
ICRM
SEMITOP® 2
IGBT module
SK 35 GAL 12T4
VGES
tpsc
Tj
ICRM = 3 x ICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
• Compact design
• One screw mounting
• Heat transfer and isolation through
direct copper bonded aluminium oxide
ceramic (DCB)
• High short circuit capability
• Trench4 IGBT technology
• CAL4F diode technology
• VCE,sat with positive coefficient
• UL recognized, file no. E 63 532
Typical Applications*
• Inverter
• Motor drive
V
43
A
35
A
35
A
105
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Ts = 25 °C
38
A
Ts = 70 °C
30
A
35
A
Tj = 150 °C
Chopper Diode
IF
Tj = 175 °C
IFnom
Features
1200
IFRM
IFRM = 3 x IFnom
105
A
IFSM
10 ms, sin 180°, Tj = 150 °C
170
A
-40 ... 175
°C
Ts = 25 °C
38
A
Ts = 70 °C
30
A
35
A
Tj
Freewheeling Diode
IF
Tj = 175 °C
IFnom
IFRM
IFRM = 3xIFnom
105
A
IFSM
10 ms, sin 180°, Tj = 150 °C
170
A
-40 ... 175
°C
-40 ... 125
°C
2500
V
Tj
Module
It(RMS)
A
Tstg
Visol
AC, sinusoidal, t = 1 min
Characteristics
Symbol
Conditions
Chopper IGBT
IC = 35 A
VCE(sat)
VGE = 15 V
chiplevel
VCE0
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.85
2.1
V
Tj = 150 °C
2.25
2.45
V
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
Tj = 25 °C
30.0
34.3
m
44.3
47.1
m
5.8
6.5
V
0.062
0.186
mA
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE = VCE V, IC = 1.2 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
- 8 V...+ 15 V
RGint
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
5
Tj = 150 °C
mA
f = 1 MHz
1.95
nF
f = 1 MHz
0.155
nF
f = 1 MHz
0.115
nF
189
nC
-

GAL
© by SEMIKRON
Rev. 0 – 03.06.2013
1
SK 35 GAL 12T4
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Chopper IGBT
td(on)
Eoff
VCC = 600 V
IC = 35 A
RG on = 22 
RG off = 22 
di/dton = 2900 A/µs
di/dtoff = 2900 A/µs
VGE = +15/-7 V
Rth(j-s)
per IGBT
tr
Eon
td(off)
tf
SEMITOP® 2
IGBT module
SK 35 GAL 12T4
Chopper Diode
VF = VEC IF = 35 A
VGE = 15 V
chiplevel
VF0
chiplevel
rF
Features
• Compact design
• One screw mounting
• Heat transfer and isolation through
direct copper bonded aluminium oxide
ceramic (DCB)
• High short circuit capability
• Trench4 IGBT technology
• CAL4F diode technology
• VCE,sat with positive coefficient
• UL recognized, file no. E 63 532
IRRM
Qrr
Err
Rth(j-s)
chiplevel
rF
• Inverter
• Motor drive
IRRM
Qrr
Err
Rth(j-s)
28
Tj = 150 °C
25
ns
Tj = 150 °C
3.27
mJ
Tj = 150 °C
303
ns
chiplevel
ns
Tj = 150 °C
70
ns
Tj = 150 °C
3.3
mJ
1.21
K/W
Tj = 25 °C
2.3
2.62
V
Tj = 150 °C
2.29
2.62
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
28.6
32.0
m
39.7
43.4
m
Tj = 150 °C
IF = 35 A
Tj = 150 °C
di/dtoff = 2900 A/µs T = 150 °C
j
VGE = -7 V
Tj = 150 °C
VR = 600 V
per Diode
Freewheeling Diode
VF = VEC IF = 35 A
VGE = 15 V
chiplevel
VF0
chiplevel
Typical Applications*
Tj = 150 °C
30
A
2
µC
1.46
mJ
1.55
K/W
Tj = 25 °C
2.3
2.60
V
Tj = 150 °C
2.29
2.62
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
28.6
32.0
m
Tj = 150 °C
39.7
43.4
m
IF = 35 A
Tj = 150 °C
di/dtoff = 2900 A/µs T = 150 °C
j
VGE = -7 V
T
j = 150 °C
VR = 600 V
per Diode
30
A
2
µC
1.46
mJ
1.55
K/W
Module
LCE
nH
Ts = 25 °C
RCC'+EE'
m
m
Ms
Mounting torque to heatsink
1.8
2
Mt
Nm
Nm
Nm
w
19
g
Temperature Sensor
R100

B100/125
K
GAL
2
Rev. 0 – 03.06.2013
© by SEMIKRON
SK 35 GAL 12T4
Fig. 1: Typical IGBT output characteristics
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 7: Typ. switching times vs. IC
© by SEMIKRON
Rev. 0 – 03.06.2013
3
SK 35 GAL 12T4
Fig. 8: Typ. switching times vs. gate resistor RG
4
Fig. 10: Typ. FWD diode forward characteristic
Rev. 0 – 03.06.2013
© by SEMIKRON
SK 35 GAL 12T4
GAL
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 0 – 03.06.2013
5
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