datasheet

SK 25 GH 12T4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Inverter - IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
ICnom
ICRM
SEMITOP® 3
IGBT module
SK 25 GH 12T4
VGES
tpsc
Tj
ICRM = 3 x ICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
• Compact design
• One screw mounting
• Heat transfer and isolation through
direct copper bonded aluminium oxide
ceramic (DCB)
• High short circuit capability
• Trench4 IGBT technology
• CAL4F diode technology
• VCE,sat with positive coefficient
Typical Applications*
• Inverter
• Motor drive
V
35
A
29
A
25
A
75
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Ts = 25 °C
28
A
Ts = 70 °C
22
A
25
A
Tj = 150 °C
Inverse - Diode
IF
Tj = 175 °C
IFnom
Features
1200
IFRM
IFRM = 3 x IFnom
75
A
IFSM
10 ms, sin 180°, Tj = 150 °C
100
A
-40 ... 175
°C
-40 ... 125
°C
2500
V
Tj
Module
It(RMS)
,
A
Tstg
Visol
AC, sinusoidal, t = 1 min
Characteristics
Symbol
Conditions
Inverter - IGBT
IC = 25 A
VCE(sat)
VGE = 15 V
chiplevel
VCE0
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.85
2.10
V
Tj = 150 °C
2.25
2.45
V
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
Tj = 25 °C
42.0
48.0
m
62.0
66.0
m
5.8
6.5
V
rCE
VGE = 15 V
VGE(th)
VGE = VCE, IC = 0.85 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
- 8 V...+ 15 V
RGint
Tj = 25 °C
td(on)
Eoff
VCC = 600 V
IC = 25 A
RG on = 19 
RG off = 19 
di/dton = 2825 A/µs
di/dtoff = 2825 A/µs
VGE = +15/-7 V
Rth(j-s)
per IGBT
tr
Eon
td(off)
tf
Tj = 150 °C
5
Tj = 25 °C
mA
mA
f = 1 MHz
1.43
nF
f = 1 MHz
0.115
nF
f = 1 MHz
0.085
nF
142
nC
0.00

Tj = 150 °C
22
ns
Tj = 150 °C
19.5
ns
Tj = 150 °C
2.27
mJ
Tj = 150 °C
288
ns
Tj = 150 °C
77.5
ns
Tj = 150 °C
2.7
mJ
1.31
K/W
GH
© by SEMIKRON
Rev. 0 – 14.06.2012
1
SK 25 GH 12T4
Characteristics
Symbol
Conditions
Inverse - Diode
VF = VEC IF = 25 A
VF0
chiplevel
rF
SEMITOP® 3
IGBT module
SK 25 GH 12T4
IRRM
Qrr
Err
Rth(j-s)
min.
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
1.1
typ.
max.
Unit
2.41
2.74
V
2.45
2.79
V
1.3
1.5
V
Tj = 150 °C
0.7
0.9
1.1
V
Tj = 25 °C
36.0
44.4
49.6
m
62.0
67.6
m
Tj = 150 °C
IF = 25 A
Tj = 150 °C
di/dtoff = 2825 A/µs T = 150 °C
j
VGE = -7 V
T
j = 150 °C
VCC = 600 V
per diode
31.5
A
1.15
µC
1.28
mJ
1.91
K/W
Module
Ms
Mounting torque
w
2.3
2.5
29
Nm
g
Temperatur Sensor
Features
• Compact design
• One screw mounting
• Heat transfer and isolation through
direct copper bonded aluminium oxide
ceramic (DCB)
• High short circuit capability
• Trench4 IGBT technology
• CAL4F diode technology
• VCE,sat with positive coefficient
R100
R(T)

,,
Typical Applications*
• Inverter
• Motor drive
GH
2
Rev. 0 – 14.06.2012
© by SEMIKRON
SK 25 GH 12T4
Fig. 1: Typical IGBT output characteristic
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 7: Typ. switching times vs. IC
© by SEMIKRON
Rev. 0 – 14.06.2012
3
SK 25 GH 12T4
Fig. 8: Typ. switching times vs. gate resistor RG
4
Fig. 10: CAL diode forward characteristic
Rev. 0 – 14.06.2012
© by SEMIKRON
SK 25 GH 12T4
GH
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 0 – 14.06.2012
5
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