650 V, 40 A Trench Field stop IGBTs with Fast Recovery Diode KGF65A4H, MGF65A4H, FGF65A4H Features Package (Not to scale) ● ● ● ● Low Saturation Voltage High Speed Switching With Integrated Fast Recovery Diode RoHS Compliant ● ● ● ● ● ● VCE ------------------------------------------------------ 650 V IC (TC = 100 °C) ----------------------------------------- 40 A Short circuit withstand time -------------------------- 10 μs VCE(sat) ----------------------------------------------- 1.9 V typ. tf (Tj = 175 °C) ------------------------------------ 60 ns typ. VF ---------------------------------------------------- 1.8 V typ. TO247-3L Applications ● ● ● ● ● TO3P-3L (4) C (1) (2) (3) G C E (4) C (1) (2) (3) G C E TO3PF-3L Welding Converters Uninterruptible Power Supplies (UPS) PFC circuit Inverter circuit Bridge circuit Equivalent circuit C (2)(4) xGF65A4H Series G (1) Products KGF65A4H MGF65A4H FGF65A4H Package TO247-3L TO3P-3L TO3PF-3L (1) (2) (3) G C E E (3) Absolute Maximum Ratings Unless otherwise specified, TA = 25 °C Parameter Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current(1) Pulsed Collector Current Diode Continuous Forward Current(1) Symbol VCE VGE IC IC(PULSE) IF Diode Pulsed Forward Current IF(PULSE) Short Circuit Withstand Time tSC Power Dissipation PD Operating Junction Temperature Storage Temperature Range TJ Tstg (1) (2) Test conditions TC = 25 °C TC= 100 °C PW ≤ 1ms Duty cycle ≤ 1 % TC = 25 °C Rating 650 ± 30 65 40 Unit V V A A 120 A (2) 40 30 A A 100 A 10 μs TC= 100 °C PW ≤ 1ms Duty cycle ≤ 1 % VGE = 15 V, VCE = 400 V 288 TC = 25 °C 72 175 − 55 to 150 W Notes MGF65A4H KGF65A4H FGF65A4H °C °C IC and IF are limited by maximum junction temperature of TO3P-3L package. Limited by bond wire. xGF65A4H-DS Rev.1.3 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. http://www.sanken-ele.co.jp/en 1 KGF65A4H, MGF65A4H, FGF65A4H Thermal Characteristics Unless otherwise specified, TA = 25 °C Parameter Symbol Thermal Resistance of IGBT (Junction to Case) RθJC(IGBT) Thermal Resistance of Diode (Junction to Case) RθJC(Di) Test Conditions Min. Typ. Max. − − 0.52 − − 2.08 − − 1.15 Unit Notes °C/W MGF65A4H KGF65A4H FGF65A4H MGF65A4H KGF65A4H °C/W 2.28 FGF65A4H Electrical Characteristics Unless otherwise specified, TA = 25 °C Parameter Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current Gate Threshold Voltage Collector to Emitter Saturation Voltage Input Capacitance Symbol Unit − − V ICES VCE = 650 V, VGE = 0 V − − 100 µA IGES VGE = ± 30 V − − ± 500 nA VGE(TH) VCE = 10 V, IC = 1 mA 4.0 5.5 7.0 V VCE(sat) VGE = 15 V, IC = 40 A − 1.9 2.4 V − 2300 − − 250 − − 110 − − 75 − td(on) − 40 − tr − 40 − − 100 − − 40 − Cies Cres Gate charge Qg Fall Time Max. 650 Reverse Transfer Capacitance Turn-Off Delay Time Typ. IC = 100 μA, VGE = 0 V Coes Rise Time Min. V(BR)CES Output Capacitance Turn-On Delay Time Test Conditions td(off) tf VCE = 20 V VGE = 0 V f = 1.0 MHz VCE = 520 V, IC = 40 A VGE = 15 V Tj = 25 °C Refer to Figure 1 pF nC ns Turn-on energy* Eon − 0.7 − Turn-off energy Eoff − 0.6 − Turn-On Delay Time td(on) − 40 − tr − 40 − − 130 − − 60 − − 1.3 − − 0.9 − − 1.8 − V − 50 − ns Rise Time Turn-Off Delay Time Fall Time Turn-on energy* td(off) tf Tj = 175 °C Refer to Figure 1 Eon Turn-off energy Eoff Emitter to Collector Diode Forward IF = 30 A VF Voltage IF = 30 A Emitter to Collector Diode Reverse trr di/dt = 700 A/μs Recovery Time *Energy losses include the reverse recovery of diode. xGF65A4H-DS Rev.1.3 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. mJ ns mJ 2 KGF65A4H, MGF65A4H, FGF65A4H Test Circuits and Waveforms DUT (Diode) L VCE Test conditions VCE = 400 V IC = 40 A VGE = 15 V RG = 10 Ω L= 100 μH RG IC 15V VGE DUT (IGBT) (a) Test Circuit VGE 90% 10% t VCE dv/dt t IC 90% 90% 10% 10% td(on) tr td(off) t tf (b) Waveform Figure 1. Test Circuits and waveforms of dv/dt and Switching Time xGF65A4H-DS Rev.1.3 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. 3 KGF65A4H, MGF65A4H, FGF65A4H Typical Characteristic Curves 1000 Collector Current, IC (A) Collector Current, IC (A) 1000 100 10 1 IGBT Single Pulse TJ = 175 °C 0.1 10 μs 100 100 μs 10 1 IGBT Single Pulse TJ = 25 °C 0.1 1 10 100 1000 1 10 100 1000 Collector-Emitter Voltage, VCE (V) Collector-Emitter Voltage, VCE (V) Figure 2. Reverse Bias Safe Operating Area Figure 3. Safe Operating Area 300 100 Collector Current, IC (A) Power Dissipation, PD (W) 250 200 150 100 TO3P-3L TO247-3L TJ < 175 °C 50 0 25 50 75 100 125 150 80 60 40 TO3P-3L TO247-3L TJ < 175 °C 20 0 175 25 50 Case Temperature, TC (°C) 75 100 125 150 175 Case Temperature, TC (°C) Figure 4. Power Dissipation vs. TO3P-3L and TO247-3L Case Temperature Figure 5. Collector Current vs. TO3P-3L and TO247-3L Case Temperature 100 80 Collector Current, IC (A) Power Dissipation, PD (W) 40 60 40 TO3PF-3L TJ < 175 °C 20 0 25 50 75 100 125 150 175 30 20 10 TO3PF-3L TJ < 175 °C 0 25 Case Temperature, TC (°C) Figure 6. Power Dissipation vs. TO3PF Case Temperature xGF65A4H-DS Rev.1.3 Jun. 03, 2016 50 75 100 125 150 175 Case Temperature, TC (°C) Figure 7. Collector Current vs. TO3PF Case Temperature SANKEN ELECTRIC CO.,LTD. 4 KGF65A4H, MGF65A4H, FGF65A4H 100 100 TJ = 25 °C Collector Current, IC (A) VGE = 12 V 80 Collector Current, IC (A) TJ = 175 °C VGE = 15 V VGE = 20 V 60 VGE = 10 V 40 VGE = 8 V 20 0 60 VGE = 10 V 40 20 VGE = 8 V 1 2 3 4 0 5 Collector-Emitter Voltage, VCE (V) 1 2 3 4 5 Collector-Emitter Voltage, VCE (V) Figure 8. Output Characteristics (TJ = 25 °C) Figure 9. Output Characteristics (TJ = 175 °C) 3.0 Collector-Emitter Saturation, VCE(sat) (V) 100 VCE = 5 V 80 Collector Current. IC (A) VGE = 12 V VGE = 20 V 0 0 60 40 TJ = 25 °C TJ = 175 °C 20 0 5 10 IC = 80 A VGE = 15 V 2.5 IC = 40 A 2.0 IC = 20 A 1.5 1.0 0 0 15 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Gate-Emitter Voltage, VGE (V) Figure 10. Transfer Characteristics Figure 11. Saturation Voltage vs. Junction Temperature 7 10000 6 Cies 1000 Capacitance (pF) Gate Threshold Voltage (V) VGE = 15 V 80 5 4 VCE = 10 V IC = 1mA 3 Coes 100 Cres f = 1 MHz VGE = 0 V 10 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) Figure 12. Gate Threshold Voltage vs. Junction Temperature xGF65A4H-DS Rev.1.3 Jun. 03, 2016 0 10 20 30 40 50 Collector-Emitter Voltage, VCE (V) Figure 13. Capacitance Characteristics SANKEN ELECTRIC CO.,LTD. 5 KGF65A4H, MGF65A4H, FGF65A4H 1000 Inductive Load IC = 40 A, VCE = 400 V, VGE = 15 V, Rg = 10 Ω IC = 40 A VCE ≈ 130 V 10 VCE ≈ 520 V Switching Time (ns) Gate -Emitter Voltage, VGE (V) 20 td(off) 100 tr tf 10 0 0 20 40 60 25 80 50 Figure 14. Typical Gate Charge 100 125 150 175 Figure 15. Switching time vs. Junction Temperature 1000 1000 Inductive Load IC = 40 A, VCE = 400 V, VGE = 15 V, Tj = 175 °C Switching Time (ns) Switching Time (ns) 75 Junction Temperature, TJ (°C) Gate charge, Qg (nC) td(off) 100 tf td(on) 10 tr Inductive Load VCE = 400 V, VGE = 15 V, Rg = 10 Ω, TJ = 175 °C td(off) tr 100 tf td(on) 10 1 1 10 10 100 100 Gate Resistor, RG (Ω) Collector Current, IC (A) Figure 16. Switching Time vs. Collector Current Figure 17. Switching Time vs. Gate Resistor 4 10 Inductive Load IC = 40 A, VCE = 400 V, VGE = 15 V, Rg = 10 Ω Eon + Eoff 2 Eon 1 Eoff 0 25 50 75 100 Inductive Load VCE = 400 V, VGE = 15 V, Rg = 10 Ω, TJ = 175 °C 8 125 150 175 Switching Loss (mJ) 3 Switching Loss (mJ) td(on) 6 Eon 4 Eoff 2 0 0 10 20 30 40 50 60 70 80 90 100 Junction Temperature, TJ (°C) Figure 18. Switching Loss vs. Junction Temperature xGF65A4H-DS Rev.1.3 Jun. 03, 2016 Eon + Eoff Collector Current, IC (A) Figure 19. Switching Loss vs. Collector Current SANKEN ELECTRIC CO.,LTD. 6 KGF65A4H, MGF65A4H, FGF65A4H 10 4 Switching Loss (mJ) 8 Eon + Eoff 6 4 Eon 2 Eoff Switching Loss (mJ) Inductive Load IC = 40 A, VCE = 400 V, VGE = 15 V, TJ = 175 °C 0 Inductive Load IC = 40 A, VGE = 15 V, Rg = 10 Ω, TJ = 175 °C 3 2 Eon 1 Eoff 0 10 20 30 40 50 60 70 80 90 100 200 Gate Resistor, RG (Ω) 300 350 400 450 500 Figure 21. Switching Loss vs. Collector-Emitter Voltage 3 100 Forward Voltage, VF (V) 80 Forward Current, IF (A) 250 Collector-Emitter Voltage, VCE (V) Figure 20. Switching Loss vs. Gate Resistor 60 TJ = 175 °C 40 20 TJ = 25 °C 0.0 0.5 1.0 1.5 2.0 2 IF = 60A IF = 30A 1 IF = 10A 0 0 2.5 0 3.0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Forward Voltage, VF (V) Figure 22. Diode Forward Characteristics Figure 23. Diode Forward Voltage vs. Junction Temperature 160 3.0 Inductive load VR = 400 V IF = 30 A TJ = 175 °C 140 120 100 80 TJ = 25 °C 60 40 300 400 500 600 700 800 900 1000 Reverse Recovery Charge, Qrr (μC) Reverse Recovery Time, trr (ns) Eon + Eoff Inductive load VR = 400 V IF = 30 A 2.5 TJ = 175 °C 2.0 1.5 1.0 TJ = 25 °C 0.5 0.0 300 400 500 600 700 800 900 1000 di/dt (A/μs) di/dt (A/μs) Figure 24. Diode Reverse Recovery Time vs. di/dt xGF65A4H-DS Rev.1.3 Jun. 03, 2016 Figure 25. Diode Reverse Recovery Charge vs. di/dt SANKEN ELECTRIC CO.,LTD. 7 KGF65A4H, MGF65A4H, FGF65A4H Reverse Recovery Current, Irr (A) 30 TJ = 175 °C 25 20 TJ = 25 °C 15 10 Inductive load VR = 400 V IF = 30 A 5 0 300 400 500 600 700 800 900 1000 di/dt (A/µs) Figure 26. Diode Reverse Recovery Current vs. di/dt Thermal Resistance (°C/W) 10 Diode 1 IGBT 0.1 TO3P-3L TO247-3L TC = 25 °C Single Pulse VCE < 5 V 0.01 0.001 1μ 10μ 100μ 1m 10m 100m 1 10 100 Pulse Width (s) Figure 27. Transient Thermal Resistance (TO3P-3L and TO247-3L) 10 Thermal Resistance (°C/W) Diode IGBT 1 0.1 TO3PF-3L TC = 25 °C Single Pulse VCE < 5 V 0.01 0.001 1μ 10μ 100μ 1m 10m 100m 1 10 100 Pulse Width (s) Figure 28. Transient Thermal Resistance (TO3PF-3L) xGF65A4H-DS Rev.1.3 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. 8 KGF65A4H, MGF65A4H, FGF65A4H Package Outline ● Dimensions is in millimeters. ● Pin treatment Pb-free. Device composition compliant with the RoHS directive. TO247-3L TO3P-3L xGF65A4H-DS Rev.1.3 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. 9 KGF65A4H, MGF65A4H, FGF65A4H TO3PF-3L Marking Diagram TO247-3L TO3P-3L KGF65A4H MGF65A4H YMDD AB YMDD AB (a) TO3PF-3L (a) (b) (b) FGF65A4H YMDD AB (a) (b) (a) Part Number (b) Lot Number Y is the last digit of the year (0 to 9) M is the month (1 to 9, O, N or D) DD is the date (two digit of 01 to 31) A and B are Sanken control number xGF65A4H-DS Rev.1.3 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. 10 KGF65A4H, MGF65A4H, FGF65A4H IMPORTANT NOTES ● All data, illustrations, graphs, tables and any other information included in this document as to Sanken’s products listed herein (the ● ● ● ● ● ● ● ● ● ● ● ● ● “Sanken Products”) are current as of the date this document is issued. All contents in this document are subject to any change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales representative that the contents set forth in this document reflect the latest revisions before use. The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products, please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken. When considering use of the Sanken Products for any applications that require higher reliability (such as transportation equipment and its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety devices, etc.), you must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the Sanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as: aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant laws of Japan (collectively, the “Specific Applications”). Sanken assumes no liability or responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific Applications or in manner not in compliance with the instructions set forth herein. In the event of using the Sanken Products by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the same, you must duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the occurrence of any failure or defect in semiconductor products at a certain rate. You must take, at your own responsibility, preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which the Sanken Products are used, upon due consideration of a failure occurrence rate or derating, etc., in order not to cause any human injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products. Please refer to the relevant specification documents and Sanken’s official website in relation to derating. No anti-radioactive ray design has been adopted for the Sanken Products. No contents in this document can be transcribed or copied without Sanken’s prior written consent. The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of use of the Sanken Products and Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you, users or any third party, resulting from the foregoing. All technical information described in this document (the “Technical Information”) is presented for the sole purpose of reference of use of the Sanken Products and no license, express, implied or otherwise, is granted hereby under any intellectual property rights or any other rights of Sanken. 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In the event of using the Sanken Products, you must use the same after carefully examining all applicable environmental laws and regulations that regulate the inclusion or use of any particular controlled substances, including, but not limited to, the EU RoHS Directive, so as to be in strict compliance with such applicable laws and regulations. You must not use the Sanken Products or the Technical Information for the purpose of any military applications or use, including but not limited to the development of weapons of mass destruction. In the event of exporting the Sanken Products or the Technical Information, or providing them for non-residents, you must comply with all applicable export control laws and regulations in each country including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan, and follow the procedures required by such applicable laws and regulations. Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including the falling thereof, out of Sanken’s distribution network. Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting from any possible errors or omissions in connection with the contents included herein. Please refer to the relevant specification documents in relation to particular precautions when using the Sanken Products, and refer to our official website in relation to general instructions and directions for using the Sanken Products. DSGN-CEZ-16001 xGF65A4H-DS Rev.1.3 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. 11