mgf65a3h ds en

650 V, 30 A
Trench Field stop IGBTs with Fast Recovery Diode
KGF65A3H, MGF65A3H, FGF65A3H
Features
Package (Not to scale)
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Low Saturation Voltage
High Speed Switching
With Integrated Fast Recovery Diode
RoHS Compliant
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VCE ------------------------------------------------------ 650 V
IC (TC = 100 °C) ----------------------------------------- 30 A
Short circuit withstand time -------------------------- 10 μs
VCE(sat) ----------------------------------------------- 1.9 V typ.
tf (Tj = 175 °C) ------------------------------------ 60 ns typ.
VF ---------------------------------------------------- 1.8 V typ.
TO247-3L
Applications
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●
TO3P-3L
(4)
C
(1) (2) (3)
G C E
(4)
C
(1) (2) (3)
G C E
TO3PF-3L
Welding Converters
Uninterruptible Power Supplies (UPS)
PFC circuit
Inverter circuit
Bridge circuit
Equivalent circuit
C (2)(4)
xGF65A3H Series
G (1)
Products
KGF65A3H
MGF65A3H
FGF65A3H
Package
TO247-3L
TO3P-3L
TO3PF-3L
(1) (2) (3)
G C E
E (3)
Absolute Maximum Ratings
 Unless otherwise specified, TA = 25 °C
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current(1)
Pulsed Collector Current
Diode Continuous Forward
Current(1)
Symbol
VCE
VGE
IC
IC(PULSE)
IF
Diode Pulsed Forward Current
IF(PULSE)
Short Circuit Withstand Time
tSC
Power Dissipation
PD
Operating Junction Temperature
Storage Temperature Range
TJ
Tstg
(1)
(2)
Test conditions
TC = 25 °C
TC= 100 °C
PW ≤ 1ms
Duty cycle ≤ 1 %
TC = 25 °C
Rating
650
± 30
50
30
Unit
V
V
A
A
90
A
(2)
TC= 100 °C
PW ≤ 1ms
Duty cycle ≤ 1 %
VGE = 15 V,
VCE = 400 V
40
30
A
A
90
A
10
μs
217
TC = 25 °C
72
175
− 55 to 150
W
Notes
MGF65A3H
KGF65A3H
FGF65A3H
°C
°C
IC and IF are limited by maximum junction temperature of TO3P-3L package.
Limited by bond wire.
xGF65A3H-DS Rev.1.2
Jun. 03, 2016
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp/en
1
KGF65A3H, MGF65A3H, FGF65A3H
Thermal Characteristics
 Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Thermal Resistance of IGBT
(Junction to Case)
RθJC(IGBT)
Thermal Resistance of Diode
(Junction to Case)
RθJC(Di)
Test Conditions
Min.
Typ.
Max.
−
−
0.69
−
−
2.08
−
−
1.15
Unit
Notes
°C/W
MGF65A3H
KGF65A3H
FGF65A3H
MGF65A3H
KGF65A3H
°C/W
2.28
FGF65A3H
Electrical Characteristics
 Unless otherwise specified, TA = 25 °C
Parameter
Collector to Emitter Breakdown
Voltage
Collector to Emitter Leakage
Current
Gate to Emitter Leakage Current
Gate Threshold Voltage
Collector to Emitter Saturation
Voltage
Input Capacitance
Symbol
Unit
−
−
V
ICES
VCE = 650 V, VGE = 0 V
−
−
100
µA
IGES
VGE = ± 30 V
−
−
± 500
nA
VGE(TH)
VCE = 10 V, IC = 1 mA
4.0
5.5
7.0
V
VCE(sat)
VGE = 15 V, IC = 30 A
−
1.9
2.4
V
−
1800
−
−
200
−
−
80
−
−
60
−
td(on)
−
30
−
tr
−
30
−
−
90
−
−
30
−
Cies
Cres
Gate charge
Qg
Fall Time
Max.
650
Reverse Transfer Capacitance
Turn-Off Delay Time
Typ.
IC = 100 μA, VGE = 0 V
Coes
Rise Time
Min.
V(BR)CES
Output Capacitance
Turn-On Delay Time
Test Conditions
td(off)
tf
VCE = 20 V
VGE = 0 V
f = 1.0 MHz
VCE = 520 V, IC = 30 A
VGE = 15 V
Tj = 25 °C
Refer to Figure 1
pF
nC
ns
Turn-on energy*
Eon
−
0.5
−
Turn-off energy
Eoff
−
0.4
−
Turn-On Delay Time
td(on)
−
30
−
tr
−
30
−
−
120
−
−
60
−
−
1.0
−
−
0.7
−
−
1.8
−
V
−
50
−
ns
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on energy*
td(off)
tf
Tj = 175 °C
Refer to Figure 1
Eon
Turn-off energy
Eoff
Emitter to Collector Diode Forward
IF = 30 A
VF
Voltage
IF = 30 A
Emitter to Collector Diode Reverse
trr
di/dt = 700 A/μs
Recovery Time
*Energy losses include the reverse recovery of diode.
xGF65A3H-DS Rev.1.2
Jun. 03, 2016
SANKEN ELECTRIC CO.,LTD.
mJ
ns
mJ
2
KGF65A3H, MGF65A3H, FGF65A3H
Test Circuits and Waveforms
DUT
(Diode)
L
VCE
Test conditions
VCE = 400 V
IC = 30 A
VGE = 15 V
RG = 10 Ω
L= 100 μH
RG
IC
15V
VGE
DUT
(IGBT)
(a) Test Circuit
VGE
90%
10%
t
VCE
dv/dt
t
IC
90%
90%
10%
10%
td(on)
tr
td(off)
t
tf
(b) Waveform
Figure 1. Test Circuits and waveforms of dv/dt and Switching Time
xGF65A3H-DS Rev.1.2
Jun. 03, 2016
SANKEN ELECTRIC CO.,LTD.
3
KGF65A3H, MGF65A3H, FGF65A3H
1000
1000
100
100
Collector Current, IC (A)
Collector Current, IC (A)
Typical Characteristic Curves
10
1
IGBT
Single Pulse
TJ = 175 °C
0.1
10 μs
100 μs
10
1
IGBT
Single Pulse
TJ = 25 °C
0.1
1
10
100
1000
1
Collector-Emitter Voltage, VCE (V)
10
100
1000
Collector-Emitter Voltage, VCE (V)
Figure 2. Reverse Bias Safe Operating Area
300
Figure 3. Safe Operating Area
100
Collector Current, IC (A)
Power Dissipation, PD (W)
250
200
150
100
TO3P-3L,
TO247-3L
TJ < 175 °C
50
0
25
50
75
100
125
150
80
60
40
TO3P-3L,
TO247-3L
TJ < 175 °C
20
0
175
25
50
Case Temperature, TC (°C)
Figure 4. Power Dissipation vs. TO3P and TO247
Case Temperature
100
125
150
175
Figure 5. Collector Current vs. TO3P and TO247
Case Temperature
100
40
80
Collector Current, IC (A)
Power Dissipation, PD (W)
75
Case Temperature, TC (°C)
60
40
TO3PF-3L
TJ < 175 °C
20
0
25
50
75
100
125
150
175
30
20
10
TO3PF-3L
TJ < 175 °C
0
25
Case Temperature, TC (°C)
Figure 6. Power Dissipation vs. TO3PF Case
Temperature
xGF65A3H-DS Rev.1.2
Jun. 03, 2016
50
75
100
125
150
175
Case Temperature, TC (°C)
Figure 7. Collector Current vs. TO3PF Case
Temperature
SANKEN ELECTRIC CO.,LTD.
4
KGF65A3H, MGF65A3H, FGF65A3H
80
Collector Current, IC (A)
90
TJ = 25 °C
70
VGE = 15 V
VGE = 12 V
VGE = 20 V
60
50
40
VGE = 10 V
30
20
VGE = 8 V
10
VGE = 20 V
70
0
50
40
VGE = 10 V
30
20
10
1
2
3
4
VGE = 8 V
0
5
Collector-Emitter Voltage, VCE (V)
1
2
3
4
5
Collector-Emitter Voltage, VCE (V)
Figure 8. Output Characteristics (TJ = 25 °C)
Figure 9. Output Characteristics (TJ = 175 °C)
3.0
Collector-Emitter Saturation, VCE(sat) (V)
90
VCE = 5 V
80
70
60
50
40
TJ = 25 °C
30
TJ = 175 °C
20
10
VGE = 15 V
0
5
10
IC = 60 A
2.5
IC = 30 A
2.0
IC = 10 A
1.5
1.0
0
0
15
25
50
75
100
125
150
175
Junction Temperature, TJ (°C)
Gate-Emitter Voltage, VGE (V)
Figure 10. Transfer Characteristics
Figure 11. Saturation Voltage vs. Junction
Temperature
7
10000
6
1000
Capacitance (pF)
Gate Threshold Voltage (V)
VGE = 12 V
VGE = 15 V
60
0
0
Collector Current. IC (A)
TJ = 175 °C
80
Collector Current, IC (A)
90
5
4
VCE = 10 V
IC = 1mA
3
Cies
Coes
100
Cres
f = 1 MHz
VGE = 0 V
10
0
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Figure 12. Gate Threshold Voltage vs. Junction
Temperature
xGF65A3H-DS Rev.1.2
Jun. 03, 2016
0
10
20
30
40
50
Collector-Emitter Voltage, VCE (V)
Figure 13. Capacitance Characteristics
SANKEN ELECTRIC CO.,LTD.
5
KGF65A3H, MGF65A3H, FGF65A3H
1000
Inductive Load
IC = 30 A, VCE = 400 V,
VGE = 15 V, Rg = 10 Ω
IC = 30 A
VCE ≈ 130 V
10
VCE ≈ 520 V
Switching Time (ns)
Gate -Emitter Voltage, VGE (V)
20
td(off)
100
tf
tr
td(on)
10
0
0
20
40
25
60
50
75
100
125
150
175
Junction Temperature, TJ (°C)
Gate charge, Qg (nC)
Figure 14. Typical Gate Charge
Figure 15. Switching time vs. Junction Temperature
1000
Inductive Load
IC = 30 A, VCE = 400 V,
VGE = 15 V, Tj = 175 °C
Switching Time (ns)
Switching Time (ns)
1000
td(off)
tf
100
td(on)
10
tr
Inductive Load
VCE = 400 V, VGE = 15 V,
Rg = 10 Ω, TJ = 175 °C
10
100
tf
td(on)
10
100
100
Gate Resistor, RG (Ω)
Collector Current, IC (A)
Figure 16. Switching Time vs. Collector Current
Figure 17. Switching Time vs. Gate Resistor
4
10
2
Switching Loss (mJ)
Inductive Load
IC = 30 A, VCE = 400 V,
VGE = 15 V, Rg = 10 Ω
3
Switching Loss (mJ)
tr
10
1
1
td(off)
Eon + Eoff
Eon
1
Inductive Load
VCE = 400 V, VGE = 15 V,
Rg = 10 Ω, TJ = 175 °C
8
Eon + Eoff
6
Eon
4
Eoff
2
Eoff
0
25
50
75
100
125
150
175
0
0
Junction Temperature, TJ (°C)
Figure 18. Switching Loss vs. Junction
Temperature
xGF65A3H-DS Rev.1.2
Jun. 03, 2016
10
20
30
40
50
60
70
80
90
Collector Current, IC (A)
Figure 19. Switching Loss vs. Collector Current
SANKEN ELECTRIC CO.,LTD.
6
KGF65A3H, MGF65A3H, FGF65A3H
4
Inductive Load
IC = 30 A, VCE = 400 V,
VGE = 15 V, TJ = 175 °C
3
Eon + Eoff
Eon
2
Eoff
1
Switching Loss (mJ)
Switching Loss (mJ)
4
0
Inductive Load
IC = 30 A, VGE = 15 V,
Rg = 10 Ω, TJ = 175 °C
3
Eon + Eoff
2
Eon
1
Eoff
0
10
20
30
40
50
60
70
80
90 100
200
Gate Resistor, RG (Ω)
250
300
350
400
450
500
Collector-Emitter Voltage, VCE (V)
Figure 20. Switching Loss vs. Gate Resistor
Figure 21. Switching Loss vs. Collector-Emitter
Voltage
3
90
70
Forward Voltage, VF (V)
Forward Current, IF (A)
80
60
50
TJ = 175 °C
40
30
20
10
TJ = 25 °C
0.5
1.0
1.5
2.0
IF = 60A
IF = 30A
1
IF = 10A
0
0
0.0
2
2.5
0
3.0
25
Forward Voltage, VF (V)
Figure 22. Diode Forward Characteristics
TJ = 175 °C
100
80
TJ = 25 °C
40
300 400 500 600 700 800 900 1000
Reverse Recovery Charge, Qrr (μC)
Reverse Recovery Time, trr (ns)
100
125
150
175
3.0
Inductive load
VR = 400 V
IF = 30 A
120
60
75
Figure 23. Diode Forward Voltage
vs. Junction Temperature
160
140
50
Junction Temperature, TJ (°C)
Inductive load
VR = 400 V
IF = 30 A
2.5
TJ = 175 °C
2.0
1.5
1.0
TJ = 25 °C
0.5
0.0
300 400 500 600 700 800 900 1000
di/dt (A/μs)
di/dt (A/μs)
Figure 24. Diode Reverse Recovery Time vs. di/dt
xGF65A3H-DS Rev.1.2
Jun. 03, 2016
Figure 25. Diode Reverse Recovery Charge vs. di/dt
SANKEN ELECTRIC CO.,LTD.
7
KGF65A3H, MGF65A3H, FGF65A3H
Reverse Recovery Current, Irr (A)
30
TJ = 175 °C
25
20
TJ = 25 °C
15
10
Inductive load
VR = 400 V
IF = 30 A
5
0
300 400 500 600 700 800 900 1000
di/dt (A/µs)
Figure 26. Diode Reverse Recovery Current vs.
di/dt
10
Thermal Resistance (°C/W)
Diode
1
IGBT
0.1
TO3P-3L
TO247-3L
TC = 25 °C
Single Pulse
VCE < 5 V
0.01
0.001
1μ
10μ
100μ
1m
10m
100m
1
10
100
Pulse Width (s)
Figure 27. Transient Thermal Resistance (TO3P-3L and TO247-3L)
10
Thermal Resistance (°C/W)
Diode
IGBT
1
0.1
TO3PF-3L
TC = 25 °C
Single Pulse
VCE < 5 V
0.01
0.001
1μ
10μ
100μ
1m
10m
100m
1
10
100
Pulse Width (s)
Figure 28. Transient Thermal Resistance (TO3PF-3L)
xGF65A3H-DS Rev.1.2
Jun. 03, 2016
SANKEN ELECTRIC CO.,LTD.
8
KGF65A3H, MGF65A3H, FGF65A3H
Package Outline
● Dimensions is in millimeters.
● Pin treatment Pb-free. Device composition compliant with the RoHS directive.
TO247-3L
TO3P-3L
xGF65A3H-DS Rev.1.2
Jun. 03, 2016
SANKEN ELECTRIC CO.,LTD.
9
KGF65A3H, MGF65A3H, FGF65A3H
TO3PF-3L
Marking Diagram
TO247-3L
TO3P-3L
KGF65A3H
MGF65A3H
YMDD AB
YMDD AB
(a)
TO3PF-3L
(a)
(b)
(b)
FGF65A3H
YMDD AB
(a)
(b)
(a) Part Number
(b) Lot Number
Y is the last digit of the year (0 to 9)
M is the month (1 to 9, O, N or D)
DD is the date (two digit of 01 to 31)
A and B are Sanken control number
xGF65A3H-DS Rev.1.2
Jun. 03, 2016
SANKEN ELECTRIC CO.,LTD.
10
KGF65A3H, MGF65A3H, FGF65A3H
IMPORTANT NOTES
● All data, illustrations, graphs, tables and any other information included in this document as to Sanken’s products listed herein (the
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“Sanken Products”) are current as of the date this document is issued. All contents in this document are subject to any change
without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales representative
that the contents set forth in this document reflect the latest revisions before use.
The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home
appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products,
please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to
Sanken. When considering use of the Sanken Products for any applications that require higher reliability (such as transportation
equipment and its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety
devices, etc.), you must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix
your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the
Sanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as:
aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result
in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant laws of Japan
(collectively, the “Specific Applications”). Sanken assumes no liability or responsibility whatsoever for any and all damages and
losses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific
Applications or in manner not in compliance with the instructions set forth herein.
In the event of using the Sanken Products by either (i) combining other products or materials therewith or (ii) physically,
chemically or otherwise processing or treating the same, you must duly consider all possible risks that may result from all such
uses in advance and proceed therewith at your own responsibility.
Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the
occurrence of any failure or defect in semiconductor products at a certain rate. You must take, at your own responsibility,
preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which
the Sanken Products are used, upon due consideration of a failure occurrence rate or derating, etc., in order not to cause any human
injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products. Please refer
to the relevant specification documents and Sanken’s official website in relation to derating.
No anti-radioactive ray design has been adopted for the Sanken Products.
No contents in this document can be transcribed or copied without Sanken’s prior written consent.
The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all
information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of
use of the Sanken Products and Sanken assumes no responsibility whatsoever for any and all damages and losses that may be
suffered by you, users or any third party, or any possible infringement of any and all property rights including intellectual property
rights and any other rights of you, users or any third party, resulting from the foregoing.
All technical information described in this document (the “Technical Information”) is presented for the sole purpose of reference
of use of the Sanken Products and no license, express, implied or otherwise, is granted hereby under any intellectual property
rights or any other rights of Sanken.
Unless otherwise agreed in writing between Sanken and you, Sanken makes no warranty of any kind, whether express or implied,
including, without limitation, any warranty (i) as to the quality or performance of the Sanken Products (such as implied warranty
of merchantability, or implied warranty of fitness for a particular purpose or special environment), (ii) that any Sanken Product is
delivered free of claims of third parties by way of infringement or the like, (iii) that may arise from course of performance, course
of dealing or usage of trade, and (iv) as to any information contained in this document (including its accuracy, usefulness, or
reliability).
In the event of using the Sanken Products, you must use the same after carefully examining all applicable environmental laws and
regulations that regulate the inclusion or use of any particular controlled substances, including, but not limited to, the EU RoHS
Directive, so as to be in strict compliance with such applicable laws and regulations.
You must not use the Sanken Products or the Technical Information for the purpose of any military applications or use, including
but not limited to the development of weapons of mass destruction. In the event of exporting the Sanken Products or the Technical
Information, or providing them for non-residents, you must comply with all applicable export control laws and regulations in each
country including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan,
and follow the procedures required by such applicable laws and regulations.
Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including
the falling thereof, out of Sanken’s distribution network.
Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is
error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting
from any possible errors or omissions in connection with the contents included herein.
Please refer to the relevant specification documents in relation to particular precautions when using the Sanken Products, and refer
to our official website in relation to general instructions and directions for using the Sanken Products.
DSGN-CEZ-16001
xGF65A3H-DS Rev.1.2
Jun. 03, 2016
SANKEN ELECTRIC CO.,LTD.
11