650 V, 60 A Trench Field stop IGBTs with Fast Recovery Diode KGF65A6H, MGF65A6H Features Package (Not to scale) ● ● ● ● Low Saturation Voltage High Speed Switching With Integrated Fast Recovery Diode RoHS Compliant ● ● ● ● ● ● VCE ------------------------------------------------------ 650 V IC (TC = 100 °C) ----------------------------------------- 60 A Short circuit withstand time -------------------------- 10 μs VCE(sat) ----------------------------------------------- 1.9 V typ. tf (TJ = 175 °C) ------------------------------------ 60 ns typ. VF ---------------------------------------------------- 1.8 V typ. TO247-3L TO3P-3L (4) C (1) (2) (3) G C E (4) C (1) (2) (3) G C E Applications ● ● ● ● ● Welding Invertor Uninterruptible Power Supplies (UPS) PFC circuit Inverter circuit Bridge circuit Equivalent circuit C (2)(4) xGF65A6H Series G (1) Products KGF65A6H MGF65A6H Package TO247-3L TO3P-3L E (3) Absolute Maximum Ratings Unless otherwise specified, TA = 25 °C Parameter Symbol Test conditions Rating Unit Collector to Emitter Voltage VCE 650 V Gate to Emitter Voltage VGE ± 30 V (2) A Continuous Collector Current(1) Pulsed Collector Current Diode Continuous Forward Current(1) IC IC(PULSE) IF Diode Pulsed Forward Current IF(PULSE) Short Circuit Withstand Time tSC Power Dissipation PD Operating Junction Temperature TJ TC = 25 °C 80 TC= 100 °C 60 A PW ≤ 1ms Duty cycle ≤ 1 % 180 A (2) A TC = 25 °C TC= 100 °C PW ≤ 1ms Duty cycle ≤ 1 % VGE = 15 V, VCE = 400 V TC = 25 °C 40 30 A 100 A 10 μs 405 W 175 °C Storage Temperature Range Tstg − 55 to 150 (1) IC and IF are limited by maximum junction temperature of TO3P-3L package. (2) Limited by bond wire. xGF65A6H-DS Rev.1.6 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. http://www.sanken-ele.co.jp/en Notes °C 1 KGF65A6H, MGF65A6H Thermal Characteristics Unless otherwise specified, TA = 25 °C Parameter Symbol Thermal Resistance of IGBT RθJC(IGBT) (Junction to Case) Thermal Resistance of Diode RθJC(Di) (Junction to Case) Test Conditions Min. Typ. Max. Unit Notes − − 0.38 °C/W − − 1.15 °C/W Electrical Characteristics Unless otherwise specified, TA = 25 °C Parameter Symbol Collector to Emitter Breakdown V(BR)CES Voltage Collector to Emitter Leakage ICES Current Gate to Emitter Leakage Current IGES Gate Threshold Voltage Collector to Emitter Saturation Voltage Input Capacitance Fall Time Unit IC = 100 μA, VGE = 0 V 650 − − V VCE = 650 V, VGE = 0 V − − 100 µA VGE = ± 30 V − − ± 500 nA 5.5 7.0 V VCE(sat) VGE = 15 V, IC = 60 A − 1.9 2.4 V − 3500 − − 330 − − 170 − − 110 − td(on) − 50 − tr − 70 − − 130 − − 40 − Cies Cres Turn-Off Delay Time Max. 4.0 Reverse Transfer Capacitance Rise Time Typ. VCE = 10 V, IC = 1 mA Coes Turn-On Delay Time Min. VGE(TH) Output Capacitance Gate charge Test Conditions Qg td(off) tf VCE = 20 V VGE = 0 V f = 1.0 MHz VCE = 520 V, IC = 60 A VGE = 15 V TJ = 25 °C Refer to Figure 1 Turn-on energy* Eon − 1.4 − Turn-off energy Eoff − 1.3 − Turn-On Delay Time td(on) − 50 − tr − 70 − − 160 − − 60 − Rise Time Turn-Off Delay Time Fall Time td(off) tf TJ = 175 °C Refer to Figure 1 Turn-on energy* Eon − 2.1 − Turn-off energy Emitter to Collector Diode Forward Voltage Emitter to Collector Diode Reverse Recovery Time Eoff − 1.8 − pF nC ns mJ ns mJ VF IF = 30 A − 1.8 − V trr IF = 30 A di/dt = 700 A/μs − 50 − ns *Energy losses include the reverse recovery of diode. xGF65A6H-DS Rev.1.6 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. 2 KGF65A6H, MGF65A6H Test Circuits and Waveforms DUT (Diode) L VCE Test conditions VCE = 400 V IC = 60 A VGE = 15 V RG = 10 Ω L= 100 μH RG IC 15V VGE DUT (IGBT) (a) Test Circuit VGE 90% 10% t VCE dv/dt t IC 90% 90% 10% 10% td(on) tr td(off) t tf (b) Waveform Figure 1. Test Circuits and waveforms of dv/dt and Switching Time xGF65A6H-DS Rev.1.6 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. 3 KGF65A6H, MGF65A6H 1000 1000 100 100 Collector Current, IC (A) Collector Current, IC (A) Typical Characteristic Curves 10 IGBT VGE = 15 V Rg = 10 Ω Single Pulse TJ = 175 °C 1 0.1 10 μs 100 μs 10 IGBT VGE = 15 V Single Pulse TJ = 25 °C 1 0.1 1 10 100 1000 1 Collector-Emitter Voltage, VCE (V) 10 100 1000 Collector-Emitter Voltage, VCE (V) Figure 2. Reverse Bias Safe Operating Area Figure 3. Safe Operating Area 450 100 350 Collector Current, IC (A) Power Dissipation, PD (W) 400 300 250 200 150 VGE = 15 V TJ < 175 °C 100 50 0 25 50 75 100 125 150 80 60 40 VGE = 15 V TJ < 175 °C 20 0 175 25 50 Case Temperature, TC (°C) Figure 4. Power Dissipation vs. Case Temperature 100 VGE = 12 V Collector Current, IC (A) Collector Current, IC (A) 125 TJ = 175 °C VGE = 15 V 80 100 150 175 Figure 5. Collector Current vs. Case Temperature 100 TJ = 25 °C 75 Case Temperature, TC (°C) VGE = 20 V 60 VGE = 10 V 40 20 VGE = 8 V VGE = 15 V VGE = 12 V 80 VGE = 20 V 60 VGE = 10 V 40 20 VGE = 8 V 0 0 0 1 2 3 4 Collector-Emitter Voltage, VCE (V) Figure 6. Output Characteristics (TJ = 25 °C) xGF65A6H-DS Rev.1.6 Jun. 03, 2016 5 0 1 2 3 4 5 Collector-Emitter Voltage, VCE (V) Figure 7. Output Characteristics (TJ = 175 °C) SANKEN ELECTRIC CO.,LTD. 4 KGF65A6H, MGF65A6H 3.0 Collector-Emitter Saturation, VCE(sat) (V) 100 Collector Current. IC (A) VCE = 5 V 80 60 40 TJ = 25 °C TJ = 175 °C 20 VGE = 15 V 2.5 IC = 60 A 2.0 IC = 30 A 1.5 1.0 0 0 5 10 0 15 25 Figure 8. Transfer Characteristics 75 100 125 150 175 Figure 9. Saturation Voltage vs. Junction Temperature 7 10000 6 Cies 1000 Capacitance (pF) Gate Threshold Voltage (V) 50 Junction Temperature, TJ (°C) Gate-Emitter Voltage, VGE (V) 5 4 VCE = 10 V IC = 1mA 3 Coes 100 Cres f = 1 MHz VGE = 0 V 10 0 25 50 75 100 125 150 0 Junction Temperature, TJ (°C) 10 20 30 40 50 Collector-Emitter Voltage, VCE (V) Figure 10. Gate Threshold Voltage vs. Junction Temperature Figure 11. Capacitance Characteristics 1000 20 IC = 60 A Inductive Load IC = 60 A, VCE = 400 V, VGE = 15 V, Rg = 10 Ω VCE ≈ 130 V 10 VCE ≈ 520 V Switching Time (ns) Gate -Emitter Voltage, VGE (V) IC = 100 A td(off) 100 tr tf td(on) 10 0 0 20 40 60 80 100 120 25 75 100 125 150 175 Junction Temperature, TJ (°C) Gate charge, Qg (nC) Figure 12. Typical Gate Charge xGF65A6H-DS Rev.1.6 Jun. 03, 2016 50 Figure 13. Switching time vs. Junction Temperature SANKEN ELECTRIC CO.,LTD. 5 KGF65A6H, MGF65A6H 1000 Inductive Load IC = 60 A, VCE = 400 V, VGE = 15 V, Tj = 175 °C td(off) tf 100 Switching Time (ns) Switching Time (ns) 1000 td(on) 10 tr Inductive Load VCE = 400 V, VGE = 15 V, Rg = 10 Ω, TJ = 175 °C 1 tr td(off) 100 tf td(on) 10 1 10 100 1 10 Figure 14. Switching Time vs. Collector Current Figure 15. Switching Time vs. Gate Resistor 5 10 Inductive Load IC = 60 A, VCE = 400 V, VGE = 15 V, Rg = 10 Ω 8 3 Eon 2 Eoff 1 0 25 50 75 100 Inductive Load VCE = 400 V, VGE = 15 V, Rg = 10 Ω, TJ = 175 °C Eon + Eoff Switching Loss (mJ) Switching Loss (mJ) 4 125 150 Eon + Eoff 6 Eon 4 Eoff 2 0 175 0 10 20 30 40 50 60 70 80 90 100 Junction Temperature, TJ (°C) Collector Current, IC (A) Figure 16. Switching Loss vs. Junction Temperature Figure 17. Switching Loss vs. Collector Current 12 6 Inductive Load IC = 60 A, VCE = 400 V, VGE = 15 V, TJ = 175 °C 8 Eon + Eoff 6 4 Eon 2 Inductive Load IC = 60 A, VGE = 15 V, Rg = 10 Ω, TJ = 175 °C 5 Switching Loss (mJ) 10 Switching Loss (mJ) 100 Gate Resistor, RG (Ω) Collector Current, IC (A) Eoff 0 Eon + Eoff 4 Eon 3 2 Eoff 1 0 5 15 25 35 45 55 65 75 85 Gate Resistor, RG (Ω) Figure 18. Switching Loss vs. Gate Resistor xGF65A6H-DS Rev.1.6 Jun. 03, 2016 95 200 250 300 350 400 450 500 Collector-Emitter Voltage, VCE (V) Figure 19. Switching Loss vs. Collector-Emitter Voltage SANKEN ELECTRIC CO.,LTD. 6 KGF65A6H, MGF65A6H 3 100 Forward Voltage, VF (V) Forward Current, IF (A) 80 60 TJ = 175 °C 40 20 TJ = 25 °C 2 IF = 60A IF = 30A 1 IF = 10A 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 25 Forward Voltage, VF (V) Figure 20. Diode Forward Characteristics 100 125 150 175 3.0 TJ = 175 °C 140 120 100 80 TJ = 25 °C 60 Inductive load VR = 400 V IF = 30 A 40 300 400 500 600 700 800 900 1000 Reverse Recovery Charge, Qrr (μC) Reverse Recovery Time, trr (ns) 75 Figure 21. Diode Forward Voltage vs. Junction Temperature 160 Inductive load VR = 400 V IF = 30 A 2.5 TJ = 175 °C 2.0 1.5 1.0 TJ = 25 °C 0.5 0.0 300 400 500 600 700 800 900 1000 di/dt (A/μs) di/dt (A/μs) Figure 22. Diode Reverse Recovery Time vs. di/dt 30 Reverse Recovery Current, Irr (A) 50 Junction Temperature, TJ (°C) Figure 23. Diode Reverse Recovery Charge vs. di/dt TJ = 175 °C 25 20 TJ = 25 °C 15 10 Inductive load VR = 400 V IF = 30 A 5 0 300 400 500 600 700 800 900 1000 di/dt (A/µs) Figure 24. Diode Reverse Recovery Current vs. di/dt xGF65A6H-DS Rev.1.6 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. 7 KGF65A6H, MGF65A6H Thermal Resistance (°C/W) 10 Diode 1 IGBT 0.1 0.01 0.001 1μ 1.E-06 TC = 25 °C Single Pulse VCE < 5 V 10μ 1.E-05 100μ 1.E-04 1m 1.E-03 10m 1.E-02 100m 1.E-01 1 1.E+00 10 1.E+01 100 1.E+02 Pulse Width (s) Figure 25. Transient Thermal Resistance xGF65A6H-DS Rev.1.6 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. 8 KGF65A6H, MGF65A6H Package Outline Dimensions is in millimeters. Pin treatment Pb-free. Device composition compliant with the RoHS directive. TO247-3L TO3P-3L xGF65A6H-DS Rev.1.6 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. 9 KGF65A6H, MGF65A6H Marking Diagram TO247-3L TO3P-3L KGF65A6H MGF65A6H YMDD AB (a) YMDD AB (a) (b) (b) (a) Part Number (b) Lot Number Y is the last digit of the year (0 to 9) M is the month (1 to 9, O, N or D) DD is the date (two digit of 01 to 31) A and B are Sanken control number xGF65A6H-DS Rev.1.6 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. 10 KGF65A6H, MGF65A6H IMPORTANT NOTES ● All data, illustrations, graphs, tables and any other information included in this document as to Sanken’s products listed herein (the ● ● ● ● ● ● ● ● ● ● ● ● ● “Sanken Products”) are current as of the date this document is issued. All contents in this document are subject to any change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales representative that the contents set forth in this document reflect the latest revisions before use. The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products, please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken. When considering use of the Sanken Products for any applications that require higher reliability (such as transportation equipment and its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety devices, etc.), you must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the Sanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as: aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant laws of Japan (collectively, the “Specific Applications”). Sanken assumes no liability or responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific Applications or in manner not in compliance with the instructions set forth herein. In the event of using the Sanken Products by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the same, you must duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the occurrence of any failure or defect in semiconductor products at a certain rate. You must take, at your own responsibility, preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which the Sanken Products are used, upon due consideration of a failure occurrence rate or derating, etc., in order not to cause any human injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products. Please refer to the relevant specification documents and Sanken’s official website in relation to derating. No anti-radioactive ray design has been adopted for the Sanken Products. No contents in this document can be transcribed or copied without Sanken’s prior written consent. The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of use of the Sanken Products and Sanken assumes no responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you, users or any third party, resulting from the foregoing. All technical information described in this document (the “Technical Information”) is presented for the sole purpose of reference of use of the Sanken Products and no license, express, implied or otherwise, is granted hereby under any intellectual property rights or any other rights of Sanken. Unless otherwise agreed in writing between Sanken and you, Sanken makes no warranty of any kind, whether express or implied, including, without limitation, any warranty (i) as to the quality or performance of the Sanken Products (such as implied warranty of merchantability, or implied warranty of fitness for a particular purpose or special environment), (ii) that any Sanken Product is delivered free of claims of third parties by way of infringement or the like, (iii) that may arise from course of performance, course of dealing or usage of trade, and (iv) as to any information contained in this document (including its accuracy, usefulness, or reliability). In the event of using the Sanken Products, you must use the same after carefully examining all applicable environmental laws and regulations that regulate the inclusion or use of any particular controlled substances, including, but not limited to, the EU RoHS Directive, so as to be in strict compliance with such applicable laws and regulations. You must not use the Sanken Products or the Technical Information for the purpose of any military applications or use, including but not limited to the development of weapons of mass destruction. In the event of exporting the Sanken Products or the Technical Information, or providing them for non-residents, you must comply with all applicable export control laws and regulations in each country including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan, and follow the procedures required by such applicable laws and regulations. Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including the falling thereof, out of Sanken’s distribution network. Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting from any possible errors or omissions in connection with the contents included herein. Please refer to the relevant specification documents in relation to particular precautions when using the Sanken Products, and refer to our official website in relation to general instructions and directions for using the Sanken Products. DSGN-CEZ-16001 xGF65A6H-DS Rev.1.6 Jun. 03, 2016 SANKEN ELECTRIC CO.,LTD. 11