CMOS linear image sensor S10077 Digital output, built-in 8/10-bit A/D converter, single power supply operation The S10077 is a CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with excellent input/output characteristics. The circuit also includes a 8-bit/10-bit A/D converter. Features Applications Pixel pitch: 14 μm Pixel height: 50 μm Analytical instruments Position detection 1024 pixels Image reading Single power supply operation: 3.3 to 5 V On-chip charge amplifier with excellent input/output characteristics Built-in timing generator allows operation with only start and clock pulse inputs. Video data rate: 1 MHz max. Spectral response range: 400 to 1000 nm Digital output 8-bit/10-bit switchable ADC Simultaneous all-pixel integration and variable integration time function Low power consumption Structure Parameter Number of pixels Pixel pitch Pixel height Photosensitive area length Package Window material Specification 1024 14 50 14.336 LCP (liquid crystal polymer) Tempax Unit μm μm mm - Absolute maximum ratings Parameter Supply voltage A/D mode selection voltage Clock pulse voltage Start pulse voltage Operating temperature*1 Storage temperature*1 Symbol Vdd Vsel V(CLK) V(ST) Topr Tstg Condition Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Value -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 -5 to +50 -10 to +60 Unit V V V V °C °C *1: No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 CMOS linear image sensor S10077 Recommended terminal voltage Parameter Symbol Vdd Supply voltage AD mode selection voltage Clock pulse voltage Start pulse voltage 8-bit 10-bit High level Low level High level Low level Vsel V(CLK) V(ST) Min. 3.3 0 Vdd - 0.25 Vdd - 0.25 0 Vdd - 0.25 0 Typ. 5 Vdd Vdd Vdd - Max. 5.25 0.4 Vdd + 0.25 Vdd + 0.25 0.4 Vdd + 0.25 0.4 Unit V V V V V V V Min. 1M 1M - Typ. f(CLK)/12 12 10 16 14 Max. 12 M 6M 30 60 30 60 - Unit Typ. 400 to 1000 700 30 0.04 0.16 0.03 0.12 0.7 2.8 0.7 2.8 29 116 19 76 - Max. Unit nm nm V/lx · s Electrical characteristics (Ta=25 °C) Parameter Clock pulse frequency Symbol 8-bit 10-bit f(CLK) Video data rate VR CL=10 pF*2 Digital output rise time (10 to 90%) CL=30 pF*2 CL=10 pF*2 Digital output fall time (90 to 10%) CL=30 pF*2 8-bit*3 Vdd=3.3 V 10-bit*4 Current consumoption 8-bit*3 Vdd=5 V 10-bit*4 tr tf l Hz Hz ns ns mA *2: CL=Load capacitance of digital output terminal *3: f(CLK)=12 MHz *4: f(CLK)=6 MHz Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity*5 Vdd=3.3 V Dark output*6 Vdd=5 V Vdd=3.3 V Saturation output*9 Vdd=5 V Vdd=3.3 V Readout noise Vdd=5 V Vdd=3.3 V Offset output Vdd=5 V Symbol λ λp R 8-bit*7 10-bit*8 8-bit*7 10-bit*8 8-bit*7 10-bit*8 8-bit*7 10-bit*8 8-bit*7 10-bit*8 8-bit*7 10-bit*8 8-bit*7 10-bit*8 8-bit*7 10-bit*8 Photoresponse nonuniformity*5 *10 Dd Dsat Nr Do PRNU Min. 255 1023 255 1023 11 44 7 28 - 0.6 2.4 0.6 2.4 2 8 2 8 41 164 27 108 ±10 digit digit digit digit % *5: Measured with a tungsten lamp of 2856 K *6: Integration time Ts=10 s *7: f(CLK)=12 MHz *8: f(CLK)=6 MHz *9: Absolute value with respect to 0 digit *10: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 1022 pixels excluding the pixels at both ends, and is defined as follows: PRNU= ΔX/X × 100 (%) X: average output of all pixels, ΔX: difference between X and maximum or minimum output 2 CMOS linear image sensor S10077 Spectral response (typical example) (Ta=25 °C) 100 Relative sensitivity (%) 80 60 40 20 0 400 600 800 1200 1000 Wavelength (nm) KMPDB0266EB A/D converter specifications (Ta=25 °C) Parameter Symbol - Digital output format Resolution*11 Conversion voltage range*12 8-bit mode 10-bit mode Vdd=3.3 V Vdd=5 V RESO - Specification Serial output 8 10 0 to 2.2 0 to 3.3 Unit bit V *11: Vsel=0 V (8-bit mode), Vdd (10-bit mode) *12: Digital output is available from MSB as serial output. 8-bit mode: D7 to D0 10-bit mode: D9 to D0 3 CMOS linear image sensor S10077 Timing Chart tf(CLK) tr(CLK) CLK ST tf(ST) tr(ST) tlp(ST) thp(ST) tpi(ST) KMPDC0224EB Parameter Start pulse interval Start pulse low period Start pulse high period*13 Start pulse rise and fall times Clock pulse duty Clock pulse rise and fall times Symbol tpi(ST) tlp(ST) thp(ST) tr(ST), tf(ST) tr(CLK), tf(CLK) Min. 12339/f(CLK) 45/f(CLK) 6000/f(CLK) 0 40 0 Typ. 20 50 20 Max. 120000/f(CLK) 30 60 30 Unit s s s ns % ns *13: Signal charge integration time equals the high period of start pulse + 7 CLK cycles. The shift register operation starts at the fall of CLK pulse immediately after ST pulse sets to low. Integration time can be changed by changing the high-to-low ratio of ST pulses. 4 CMOS linear image sensor S10077 8-bit mode In the neighborhood of start pixel 012345 10 15 20 25 30 35 40 45 50 55 CLK tlp(ST) ST thp(ST) tpi(ST) 7 EOS 22 AO1 21 AO 34 AO2 33 46 AO3 45 D7 34 D0 D7 42 46 AO4 57 Trig(A) DO1 DO 34.5 D0 54 DO2 41.5 46.5 53.5 Trig(D) 33 45 57 EOC In the neighborhood of last pixel CLK ST thp(ST) tpi(ST) 12322 EOS AO 12286 AO1023 12285 12298 AO1024 12297 Trig(A) DO D0 D7 D0 D7 D0 D7 D0 12282 12286 12294 12298 12306 12310 12318 DO1022 DO1023 DO1024 12281.5 12286.5 12293.5 12298.5 12305.5 12310.5 12317.5 Trig(D) 12285 12297 12309 12320 EOC KMPDC0225EB Note: When using analog output AO, read the AO output at the falling edge of Trig(A). When using digital output DO, read the DO output at the falling edge of Trig(D). 5 CMOS linear image sensor S10077 10-bit mode In the neighborhood of start pixel 012345 10 15 20 25 30 35 40 45 50 55 CLK tlp(ST) ST thp(ST) tpi(ST) 7 EOS 22 AO1 21 AO 34 AO2 33 46 AO3 45 D9 34 D0 D9 44 46 AO4 57 Trig(A) DO1 DO 34.5 D0 56 DO2 43.5 46.5 55.5 Trig(D) 33 45 57 EOC In the neighborhood of last pixel CLK ST thp(ST) tpi(ST) 12322 EOS AO 12286 AO1023 12285 12298 AO1024 12297 Trig(A) DO D0 D9 D0 D9 D0 D9 D0 12284 12286 12296 12298 12308 12310 12320 DO1022 DO1023 DO1024 12283.5 12286.5 12295.5 12298.5 12307.5 12310.5 12319.5 Trig(D) 12285 12297 12309 12320 EOC KMPDC0226EB Note: When using analog output AO, read the AO output at the falling edge of Trig(A). When using digital output DO, read the DO output at the falling edge of Trig(D). 6 CMOS linear image sensor S10077 Dimensional outline (unit: mm) 1.35 ± 0.2*1 Photosensitive surface 7.168 ± 0.3 a 13 1 a’ 12 0.2 0.5 ± 0.05*3 1 ch 41.6 ± 0.2 a-a’ cross section Direction of scan 4.0 ± 0.5 3.0 4.23 ± 0.4 Photosensitive area 50 µm 9.1 ± 0.1 10.02 ± 0.3 24 1.4 ± 0.2*2 10.2 ± 0.5 Photosensitive area 14.336 2.54 Tolerance unless otherwise noted: ±0.1 *1: Distance from window upper surface to photosensitive surface *2: Distance from package bottom to photosensitive surface *3: Glass thickness 0.51 27.94 6.83 ± 0.2 KMPDA0202EE Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 Symbol NC D.Trig DO A.Trig AO NC NC Vdd Vss NC NC NC I/O O O O O I I Discription No connection Trigger signal for digital output Digital output Trigger signal for analog output Analog output No connection No connection Supply voltage GND No connection No connection No connection Pin no. 13 14 15 16 17 18 19 20 21 22 23 24 Symbol NC NC NC EOS EOC NC Vsel Vss Vdd CLK ST NC I/O O O I I I I I Discription No connection No connection No connection End of scan signal Digital conversion end signal No connection A/D mode selection voltage GND Supply voltage Clock signal Start signal No connection Note: Leave the “NC” terminals open and do not connect them to GND. When using the analog output terminal, connect a buffer amplifier for impedance conversion to it so as to minimize the current flow. As the buffer amplifier, use a high input impedance operational amplifier with JFET or CMOS input. 7 CMOS linear image sensor S10077 Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Incident window If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Image sensors/Precautions Information described in this material is current as of May, 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1088E08 May 2016 DN 8