IMAGE SENSOR CMOS linear image sensor S9227 High-speed readout, simultaneous integration S9227 is a small CMOS linear image sensor designed for image input applications. Signal charge is integrated on all pixels simultaneously and then read out at high speeds of 5 MHz. Features Applications l Pixel pitch: 12.5 µm Pixel height: 250 µm l Number of pixels: 512 ch l Single 5 V power supply operation l Video data rate: 5 MHz Max. l Simultaneous charge integration l Shutter function l High sensitivity, low dark current, low noise l Built-in timing generator allows operation with only start and clock pulse inputs l Spectral response range: 400 to 1000 nm l 8-pin DIP, 16-pin surface mount type also available l Position detection l Image reading ■ Absolute maximum ratings Parameter Supply voltage Clock pulse voltage Start pulse voltage Operating temperature *1 Storage temperature *1: No condensation Symbol Vdd V (CLK) V (ST) Topr Tstg Value -0.3 to +6 -0.3 to +6 -0.3 to +6 -5 to +60 -10 to +70 Unit V V V °C °C ■ Mechanical specifications Parameter Number of pixels Pixel pitch Pixel height Active area length Window material Value 512 12.5 250 6.4 TEMPAX Unit µm µm mm - 1 CMOS linear image sensor S9227 ■ Recommended terminal voltage Parameter Supply voltage Symbol Vdd High Low High Low Clock pulse voltage Start pulse voltage V (CLK) V (ST) Min. 4.75 Vdd-0.25 Vdd-0.25 - Typ. 5 Vdd 0 Vdd 0 Max. 5.25 Vdd+0.25 Vdd+0.25 - Unit V V V V V Max. 5 180 200 Unit MHz MHz mW µV/eΩ ■ Electrical characteristics [Ta=25 °C, Vdd=5 V, V (CLK) =V (ST)=5 V] Parameter Clock pulse frequency Video data rate Power consumption Conversion efficiency Output impedance *2 Symbol f (CLK) VR P CE Zo Min. 0.05 - Typ. f (CLK) 150 1.6 50 ■ Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V (CLK)=V (ST)=5 V] Parameter Symbol Min. Typ. Max. Unit Spectral response range 400 to 1000 nm λ Peak sensitivity wavelength 700 nm λp Dark current ID 5 50 fA Saturation charge Qsat 320 420 fC Dark output voltage *3 Vd 0.5 5 mV Saturation output voltage *4 Vsat 3.2 4.2 V Readout noise Nr 0.4 1.0 mV rms Offset output voltage Vo 0.6 1.0 V Photo response non-uniformity *5 *6 PRNU -5 +5 % *2: An increased current consumption at the video terminal rises the sensor chip temperature causing an increased dark current. Connect a buffer amplifier for impedance conversion to the video terminal so that the current flowing to the video terminal is minimized. Use a JFET or CMOS input, high-impedance input op amp as the buffer amplifier. *3: Storage time Ts=10 ms *4: Voltage difference with respect to Vo, Ts=10 ms *5: Uniformity is defined under the condition that the device is uniformly illuminated by light which is 50 % of the saturation exposure level and using 510 pixels excluding both ends pixels as follows: PRNU= ∆X/X × 100 (%) X: the average output of all pixels, ∆X: difference between X and maximum or minimum output. *6: Measured with a tungsten lamp of 2856 K. ■ Spectral response (typical example) (Typ. Ta=25 ˚C) RELATIVE SENSITIVITY (%) 100 80 60 40 20 0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) KMPDB0230EC 2 CMOS linear image sensor S9227 ■ Timing chart tpw (CLK), T1 1 2 3 4 Trig 13 1415 CLK INTEGRATION TIME 2.5 CLOCKS 8.5 CLOCKS tlw (ST) ST thw (ST) tpw (ST) 512 Video EOS tf (CLK) tr (CLK) CLK CLK tpw (CLK) ST Video tf (ST) tr (ST) tlw (ST) tvd1 tvd2 thw (ST) tpw (ST) KMPDC0166EB Parameter Symbol Min. Typ. Max. Start pulse width tpw (ST) T1 × 530 ns 1100 ms Start pulse high width thw (ST) T1 × 8 ns 1000 ms Start pulse low width tlw (ST) T1 × 15 ns 100 ms Start pulse rise and fall time tr (ST), tf (ST) 0 20 30 Clock pulse width tpw (CLK), T1 200 20000 Clock pulse rise and fall time tr (CLK), tf (CLK) 0 20 30 Video delay time 1 tvd1 32 40 48 Video delay time 2 tvd2 40 50 60 Note: The internal circuit starts operating at the rise of CLK pulse immediately after ST pulse sets to low. The integration time equals the high period of ST pulse plus 6 CLK cycles. · The output from 1st channel appears 14 clocks plus 100 ns after the falling edge of ST pulse. · The EOS pulse is output 25 ns after the falling edge of CLK pulse. · The output after reading the last pixel (512 ch) is indefinite. Unit ns ns ns ns ns ■ Block diagram CLK ST GND Vdd 8 7 1 4 TIMING GENERATOR SHIFT REGISTER 6 EOS HOLD CIRCUIT 5 Video CHARGE AMP ARRAY 1 2 3 4 PHOTODIODE 511 512 ARRAY KMPDC0167EA 3 CMOS linear image sensor S9227 ■ Pin connections GND 1 8 CLK NC 2 7 ST NC 3 6 EOS Vdd 4 5 Video Pin No. 1 2 3 4 5 6 7 8 KMPDC0264EA Symbol GND NC NC Vdd Video EOS ST CLK Name of pin Ground Supply voltage Video output End of scan Start pulse Clock pulse I/O I Open Open I O O I I ■ Dimensional outline (unit: mm) 5 1 4 0.763 8 7.87 ± 0.25 ACTIVE AREA 6.4 × 0.25 1 ch CHIP 1.05 ± 0.15 12.0 ± 0.3 5.0 ± 0.5 0.5 2.54 1.5 ± 0.15 0.5 PIN No. 1 0.25 7.62 7.62 KMPDA0173EA ■ Precautions during use (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Incident window If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Operating and storage environments Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1074E04 4 Feb. 2007 DN