CMOS linear image sensors CMOS linear image sensors S9226 series Built-in timing generator and signal processing circuit; 3.3 V single supply operation The S9226 series is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with excellent input/output characteristics. Two package styles are provided: a DIP type and a surface mount type. Features Applications Pixel pitch: 7.8 μm Pixel height: 125 μm Analytical instruments Position detection 1024 pixels Image reading 3.3 V single power supply operation available High sensitivity, low dark current, low noise On-chip charge amplifier with excellent input/output characteristics Built-in timing generator allows operation with only start and clock pulse inputs. Video data rate: 200 kHz max. Spectral response range: 400 to 1000 nm Two package styles are provided: DIP (dual inline package) type: S9226-03 Surface mount type: S9226-04 Structure Parameter Number of pixels Pixel pitch Pixel height Photosensitive area length Package Window material S9226-03 S9226-04 1024 7.8 125 7.9872 Ceramic Borosilicate glass (Tempax) Unit μm μm mm - Absolute maximum ratings Parameter Symbol Value Unit Supply voltage Vdd -0.3 to +6 V Gain selection terminal voltage Vg -0.3 to +6 V Clock pulse voltage V(CLK) -0.3 to +6 V Start pulse voltage V(ST) -0.3 to +6 V Operating temperature*1 Topr -5 to +60 °C Storage temperature*1 Tstg -10 to +70 °C Reflow soldering condition*2 *3 Tsol Peak temperature 240 °C, 2 times (See P.8.) Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: No condensation *2: S9226-04 *3: JEDEC level 5 www.hamamatsu.com 1 CMOS linear image sensors S9226 series Recommended terminal voltage (Ta=25 °C) Parameter Symbol Vdd Supply voltage Gain selection terminal voltage Clock pulse voltage Start pulse voltage High gain Low gain High level Low level High level Low level Vg V(CLK) V(ST) Min. 3.3 Vdd - 0.25 Vdd - 0.25 Vdd - 0.25 - Typ. 5 0 Vdd Vdd 0 Vdd 0 Max. 5.25 Vdd + 0.25 Vdd + 0.25 Vdd + 0.25 - Unit V V V V V V V Max. 800 k 40 - Unit Hz Hz mW Electrical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V] Parameter Clock pulse frequency Video data rate Power consumption Symbol f(CLK) VR P High gain Low gain Conversion efficiency Output impedance*4 Min. 10 k 20 - CE Zo Typ. f(CLK)/4 30 3.2 1.6 185 μV/e Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V] Parameter Spectral response range Peak sensitivity wavelength Dark current Symbol p ID Min. Typ. Max. Unit 400 to 1000 nm 650 nm 5 50 fA High gain 0.8 8 5 Dark output voltage* Vd mV Low gain 0.4 4 6 Saturation output voltage* Vsat 2.2 3.2 V High gain 1.4 2.2 Readout noise Nr mV rms Low gain 0.7 1.1 Offset output voltage Vo 0.2 0.35 0.6 V Photoresponse nonuniformity*7 *8 PRNU ±5 % *4: An increased current consumption at the video output terminal rises the sensor chip temperature causing an increased dark current. Connect a buffer amplifier for impedance conversion to the video output terminal so that the current flow is minimized. Use a JFET or CMOS input, high-impedance input op amp as the buffer amplifier. *5: Integration time=10 ms *6: Voltage difference with respect to Vo *7: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 1022 pixels excluding the pixels at both ends, and is defined as follows: PRNU = X/X × 100 (%) X: average output of all pixels, X: difference between X and maximum or minimum output *8: Measured with a tungsten lamp of 2856 K Block diagram CLK ST Trig GND Vdd EOS Vg Timing generator Shift register Charge amp Address switch 1 2 3 4 5 Clamp circuit Video 1023 1024 Photodiode array KMPDC0165EC 2 CMOS linear image sensors S9226 series Spectral response (typical example) (Ta=25 °C) 100 Relative sensitivity (%) 80 60 40 20 0 400 500 600 700 800 900 1000 1100 Wavelength (nm) KMPDB0229EC Resolution Contrast transfer function vs. spatial frequency (typical example) CTF: contrast transfer function VWO : VBO : VW : VB : VW - VB output output output output white level black level white level (when input pattern pulse width is wide) black level (when input pattern pulse width is wide) Contrast transfer function CTF = (Ta=25 °C, Low gain) 1.0 VWO - VBO 0.8 S9226 series 0.6 0.4 Previous type 0.2 0 0 10 20 30 40 50 Spatial frequency (line pairs/mm) KMPDB0318EB 3 CMOS linear image sensors S9226 series Dark output voltage vs. temperature (typical example) (Ts=10 ms) 100 Dark output voltage (mV) Vdd=5 V Vdd=3.3 V 10 High gain Low gain 1 High gain 0.1 Low gain 0.01 0.001 -20 0 20 40 60 80 Temperature (°C) KMPDB0319EB Current consumption vs. temerature (typical example) (Dark state) 6.5 Current consumption (mA) 6.0 Vdd=5 V Vdd=3.3 V High gain 5.5 5.0 Low gain High gain 4.5 4.0 3.5 Low gain 3.0 2.5 -20 0 20 40 60 80 Temperature (°C) KMPDB0320EB 4 CMOS linear image sensors S9226 series Output waveform of one element High gain [Typ. Ta=25 °C, Vdd=5 V, f(CLK)=800 kHz] 3.55 V Saturation output voltage=3.2 V 0.35 V Output offset voltage=0.35 V Saturation state 1 V/div. Dark state Trigger 10 V/div. GND GND CLK GND 400 ns/div. Low gain [Typ. Ta=25 °C, Vdd=5 V, f(CLK)=800 kHz] 3.55 V Saturation output voltage=3.2 V 0.35 V Output offset voltage=0.35 V Saturation state 1 V/div. Dark state Trigger 10 V/div. CLK GND GND GND 400 ns/div. 5 CMOS linear image sensors S9226 series Timing chart 1/f(CLK) CLK tpi(ST), Integration time ST Video Trig EOS tr(CLK) tf(CLK) CLK 1/f(CLK) tr(ST) tf(ST) ST tvd Video KMPDC0164EC Parameter Start pulse cycle Start pulse rise and fall times Clock pulse duty ratio Clock pulse rise and fall times Video delay time*9 Symbol tpi(ST) tr(ST), tf(ST) tr(CLK), tf(CLK) tvd Min. 4104/f(CLK) 0 40 0 10 Typ. 20 50 20 20 Max. 30 60 30 30 Unit s ns % ns ns *9: Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V Note: The CLK pulse should be set from high to low just once when the st pulse is low. The internal shift register starts operating at this timing. The integration time is determined by the start pulse cycles. However, since the charge integration of each pixel is carried out between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge integration differs depending on each pixel. In addition, the next start pulse cannot be input until signal readout from all pixels is completed. 6 CMOS linear image sensors S9226 series Dimensional outlines (unit: mm) A 5 7.87 ± 0.25 8 4 A’ * A-A’ cross section * Distance from upper surface of window to photosensitive surface Pin no. 1 0.5 ± 0.05 2.54 ± 0.13 1.5 ± 0.15 0.5 ± 0.05 Direction of scan 5.0 ± 0.5 Photosensitive surface 3.935 ± 0.25 1 1 ch 7.62 ± 0.25 Photosensitive area 7.9872 × 0.125 0.25-0.03 1.05 ± 0.2* 12.0 ± 0.3 +0.05 S9226-03 7.62 ± 0.13 KMPDA0172EF Pin no. Symbol Pin name Input/Output 1 GND Ground Input 2 CLK Clock pulse Input 3 Trig Trigger pulse Output 4 ST Start pulse Input 5 Vg Gain selection voltage Input 6 Video Video output Output 7 Output EOS End of scan 8 Vdd Supply voltage Input S9226-04 A 1 A’ 9 8 Direction of scan 3.5 ± 0.2 1 ch 0.5 ± 0.05 7.0 ± 0.2 Photosensitive area 16 7.9872 × 0.125 (16 ×)1.0 1.5 ± 0.15 12.5 ± 0.2 Photosensitive surface (16 ×)0.6 9 16 1 8 1.05 ± 0.2* (4 ×)R0.2 Index mark 1.27 8.89 A-A’ cross section * Distance from upper surface of window to photosensitive surface KMPDA0258EC Pin no. Symbol Pin name 1 NC No connection 2 NC No connection 3 GND Ground 4 CLK Clock pulse 5 Trig Trigger pulse 6 ST Start pulse 7 NC No connection 8 NC No connection Input/Output Pin no. Symbol Pin name Input/Output 9 NC No connection 10 NC No connection Input 11 Vg Gain selection voltage Input Input 12 Video Video output Output Output 13 Output EOS End of scan Input 14 Vdd Supply voltage Input 15 NC No connection 16 NC No connection 7 CMOS linear image sensors S9226 series Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Light input window If the incident window is contaminated or scratched, the output uniformity will deteriorate considerably, so care should be taken in handling the window. Avoid touching it with bare hands. The window surface should be cleaned before using the device. If dry cloth or dry cotton swab is used to rub the window surface, static electricity may be generated, and therefore this practice should be avoided. Use soft cloth, cotton swab or soft paper moistened with ethyl alcohol to wipe off dirt and foreign matter on the window surface. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Reflow soldering (S9226-04) Soldering conditions may differ depending on the board size, reflow furnace, etc. Check the conditions before soldering. A sudden temperature rise and cooling may be the cause of trouble, so make sure that the temperature change is within 4 °C per second. The bonding portion between the ceramic base and the glass may discolor after reflow soldering, but this has no adverse effects on the hermetic sealing of the product. (5) Operating and storage environments Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (6) UV exposure This product is not designed to prevent deterioration of characteristics caused by UV exposure, so do not expose it to UV light. Recommended temperature profile reflow soldering (S9226-04) 300 Peak temperature 240 °C max. Temperature (°C) 250 200 150 100 50 0 0 50 100 150 200 250 300 Time (s) KAPDB0169EA 8 CMOS linear image sensors S9226 series Application circuit example (S9226-03)*10 +5 V 22 µF /25 V +5 V +5 V 22 µF /25 V + 0.1 µF + CLK ST 82 Ω 74HC541 82 Ω 1 GND Vdd 8 2 CLK EOS 7 3 Trig Video 6 0.1 µF + 22 µF /25 V 0.1 µF EOS Trig Vg 5 4 ST 74HC541 S9226-03 Vg +5 V 0.1 µF 100 Ω + - 22 µF /25 V + 22 µF /25 V LT1818 51 Ω Video 22 pF 0.1 µF + -5 V KMPDC0416EA *10: The S9226-04 has a different pin connections, but uses the same circuit. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Image sensors/Precautions ∙ Surface mount type products/Precautions Information described in this material is current as of June, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1121E07 Jun. 2014 DN 9