s11151-2048 kmpd1119e

CCD linear image sensor
S11151-2048
High sensitivity in the ultraviolet region,
front-illuminated CCD
Despite a front-illuminated CCD, the S11151-2048 offers high sensitivity in the ultraviolet region (200 nm) nearly equal to
back-thinned CCD.
Features
Applications
High sensitivity in the ultraviolet region
(spectral response range: 200 to 1000 nm)
Image lag: 0.1% typ.
Spectrometers
Low dark current
Low cost
Structure
Parameter
Pixel size (H × V)
Number of total pixels
Number of effective pixels
Image size (H × V)
Horizontal clock phase
Output circuit
Package
Window material
Specification
14 × 200 μm
2056
2048
28.672 × 0.200 mm
2-phase
Two-stage MOSFET source follower
24-pin ceramic DIP (refer to dimensional outline)
Quartz glass*1
*1: Resin sealing
Absolute maximum ratings (Ta=25 °C, unless otherwise noted)
Parameter
Operating temperature*2 *3
Storage temperature*3
Output transistor drain voltage
Reset drain voltage
Vertical input source voltage
Horizontal input source voltage
Test point
Vertical input gate voltage
Horizontal input gate voltage
Summing gate voltage
Output gate voltage
Reset gate voltage
Transfer gate voltage
Horizontal shift register clock voltage
Symbol
Topr
Tstg
VOD
VRD
VISV
VISH
VIGV
VIGH
VSG
VOG
VRG
VTG
VP1H, VP2H
Min.
-50
-50
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-10
-10
Typ.
-
Max.
+55
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
V
V
V
V
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
*2: Package temperature
*3: No condensation
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1
CCD linear image sensor
S11151-2048
Operating conditions (Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Vertical input source voltage
Horizontal input source voltage
Test point
Vertical input gate voltage
Horizontal input gate voltage
High
Summing gate voltage
Low
Output gate voltage
Substrate voltage
High
Reset gate voltage
Low
High
Transfer gate voltage
Low
High
Horizontal shift register clock voltage
Low
External load resistance
Symbol
VOD
VRD
VISV
VISH
VIGV
VIGH
VSGH
VSGL
VOG
VSS
VRGH
VRGL
VTGH
VTGL
VP1HH, VP2HH
VP1HL, VP2HL
RL
Min.
12
10.5
-5
-5
4
-5
2
4
-5
7
-5
4
-5
2.0
Typ.
13
11
VRD
VRD
-4
-4
5
-4
3
0
5
-4
8
-4
5
-4
2.2
Max.
14
11.5
6
-3
4
6
-3
9
-3
6
-3
2.4
Unit
V
V
V
V
V
V
V
V
V
V
V
V
kΩ
Electrical characteristics (Ta=25 °C, unless otherwise noted, operating conditions: Typ.)
Parameter
Signal output frequency*4
Line rate
Horizontal shift register capacitance
Summing gate capacitance
Reset gate capacitance
Transfer gate capacitance
Charge transfer efficiency*5
DC output level*4
Output impedance*4
Power consumption*4 *6
Symbol
fc
LR
CP1H, CP2H
CSG
CRG
CTG
CTE
Vout
Zo
P
Min.
0.99995
-
Typ.
1
0.48
220
10
10
110
0.99999
8.5
220
65
Max.
5
2.37
-
Unit
MHz
kHz
pF
pF
pF
pF
V
Ω
mW
*4: The value depends on the load resistance.
*5: Charge transfer efficiency per pixel of CCD shift register, measured at half of the full well capacity
*6: Power consumption of the on-chip amplifier plus load resistance
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted, operating conditions: Typ.)
Parameter
Saturation output voltage
Full well capacity
CCD node sensitivity
Symbol
Vsat
Fw
Sv
Average of all effective pixels
DSave
Maximum of all effective pixels
DSmax
Dark current*7
Min.
150
5
3000
-
Typ.
Fw × Sv
200
6
700
4
3500
20
25
8000
200 to 1000
±3
0.1
Max.
7
3500
20
17500
100
50
±10
1
Readout noise*8
Nr
DR
Dynamic range*9
Spectral response range
λ
Photoresponse nonuniformity*10 *11
PRNU
Image lag*10
L
*7: Dark current is reduced to half for every 5 to 7 °C decrease in temperature.
*8: Readout frequency 1 MHz
*9: Dynamic range = Full well capacity / Readout noise
*10: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)
*11: Photoresponse nonuniformity =
Fixed pattern noise (peak to peak)
Signal
Unit
V
keμV/ee-/pixel/s
pA/cm2
e-/pixel/s
pA/cm2
e- rms
nm
%
%
× 100 [%]
2
CCD linear image sensor
S11151-2048
Spectral transmittance characteristics of window material
Spectral response (without window, typical example)*12
(Ta=25 °C)
100
(Typ. Ta=25 °C)
100
90
Quantum efficiency (%)
80
80
Transmittance (%)
70
60
50
40
30
60
40
20
20
10
0
200 300 400 500 600 700 800 900 1000 1100
0
100 200 300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
Wavelength (nm)
KMPDB0303EA
KMPDB0372EA
*12: Spectral response with quartz glass is decreased according to the
spectral transmittance characteristic of window material.
Device structure (conceptual drawing of top view)
22
21
20
19
18
17
16
S2039
S2040
S2041
S2042
S2043
S2044
S2045
S2046
S2047
S2048
23
Photodiode S1 S2 S3 S4 S5 S6 S7 S8 S9 S10
24
CCD horizontal shift register
D1 D2 D3 D4
D5 D6 D7 D8
15
14
13
1
2
3
4
5
6
7
8
9
10
11
12
Light-shielded section
KMPDC0341EB
3
CCD linear image sensor
S11151-2048
Timing chart
1 line period (integration time)
Tpwv
Tovr
TG
Tpwh, Tpws
1
P1H
2
3...2055
2056
P2H
SG
Tpwr
RG
OS
D1
D2
D7
D3, D4, S1...S2048, D5, D6
Normal readout period
D8
Dummy readout period*
* When making the integration time longer than the normal readout period, to carry away the dark current generated in the CCD
horizontal shift register, perform dummy readout after completion of the normal readout until right before rising transfer gate
pulse.
KMPDC0342EC
TG
P1H, P2H*13
SG
RG
TG-P1H
Parameter
Pulse width
Rise and fall times
Pulse width
Rise and fall times
Duty ratio
Pulse width
Rise and fall times
Duty ratio
Pulse width
Rise and fall times
Overlap time
Symbol
Tpwv
Tprv, Tpfv
Tpwh
Tprh, Tpfh
Tpws
Tprs, Tpfs
Tpwr
Tprr, Tpfr
Tovr
Min.
6
20
100
10
40
100
10
40
10
5
1
Typ.
8
500
50
500
50
100
2
Max.
60
60
-
Unit
μs
ns
ns
ns
%
ns
ns
%
ns
ns
μs
*13: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude.
4
CCD linear image sensor
S11151-2048
Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1)
0.5 ± 0.05*3
13
10.03 ± 0.25
24
Photosensitive
surface
1
10.16 ± 0.25
Photosensitive area 28.672 × 0.200
0.25 -0.03
1.65 ± 0.2*2
+0.05
1.115 ± 0.1*1
41.6 ± 0.42
12
2.54 ± 0.13
0.5 ± 0.05
27.94 ± 0.3
3.0 ± 0.2
Index mark
3.0 ± 0.03
Index mark
*1: Length from upper surface of window to
photosensitive surface
*2: Length from bottom surface of package
to photosensitive surface
*3: Window thickness
Note: This product is not hermetically sealed and moisture may penetrate inside the package.
Avoid using or storing this product in an environment where sudden temperature and
humidity changes may occur and cause condensation in the package.
KMPDA0261EC
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Symbol
OS
OD
OG
SG
SS
RD
P2H
P1H
IGH
IGV
ISV
ISH
SS
RD
TG
RG
Function
Output transistor source
Output transistor drain
Output gate
Summing gate
Substrate
Reset drain
Remark (standard operation)
RL=2.2 kΩ
+13 V
+3 V
Same pulse as P2H
GND
+11 V
CCD horizontal register clock-2
CCD horizontal register clock-1
+5/-4 V
+5/-4 V
Test
Test
Test
Test
-4 V
-4 V
Connect it to RD.
Connect it to RD.
point
point
point
point
(horizontal input gate)
(vertical input gate)
(vertical input source)
(horizontal input source)
Substrate
Reset drain
GND
+11 V
Transfer gate
Reset gate
+8/-4 V
+5/-4 V
5
CCD linear image sensor
S11151-2048
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Image sensors/Precautions
Information described in this material is current as of November, 2012.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
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United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMPD1119E04 Nov. 2012 DN
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