InGaAs PIN photodiodes G13176 series Surface mount type COB (chip on board) package The G13176 series is a small-size near infrared detector available in a surface mount COB package. Its size is drastically reduced compared to the previous metal package type (G12180-003A/-010A). The spectral response covers a range from 0.9 to 1.7 μm (with peak sensitivity wavelength at 1.55 μm). This product features high sensitivity and low noise. In addition to optical communication, you can use this product for analysis, measurement, and the like. The small package makes this product suitable for integration into hand-held devices and mobile devices. The modified resin has improved the reflow resistivity as compared to the previous product (G11777-003P). Features Application Low noise Measurement High sensitivity Analysis High-speed response Light level monitor Photosensitive area: ϕ0.3 mm, ϕ1.0 mm Surface mount type Small size COB package Low cost Compatible lead-free reflow soldering Structure Parameter Window material Package Photosensitive area Symbol - G13176-003P G13176-010P Silicone resin Glass epoxy ϕ0.3 ϕ1.0 Unit mm Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Topr Tstg Condition No dew condensation*1 No dew condensation*1 Value 10 -25 to +105 -40 to +105 Unit V °C °C Note: Handle the G13176 series with tweezers or gloves. Do not touch with bare hands. As the resin area of the G13176 series is soft, do not allow sharp or hard objects to come in contact with it, or apply external force to it. Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. The G13176 series may be damaged by electrostatic discharge, etc. Be careful when using the G13176 series. www.hamamatsu.com 1 InGaAs PIN photodiodes G13176 series Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Spectral response range λ Peak sensitivity wavelength λp Photosensitivity S Dark current Cutoff frequency Terminal capacitance Shunt resistance Detectivity Noise equivalent power ID fc Ct Rsh D* NEP Condition 10% or more of the value at peak λ=1.3 μm λ=λp VR=5 V VR=5 V, RL=50 Ω VR=5 V, f=1 MHz VR=10 mV λ=λp λ=λp Min. 0.9 to 1.7 - - G13176-010P Typ. Max. 0.9 to 1.7 - Unit μm Photosensitivity temperature characteristics (Typ. Ta=25 °C, VR=0 V) 0.8 0.6 0.4 0.2 0 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Wavelength (μm) (Typ. Ta=25 °C, VR=0 V) 2 Temperature coefficient (%/°C) 1.0 Photosensitivity (A/W) - Min. 1.55 1.55 μm 0.75 0.85 0.75 0.85 A/W 0.85 1 0.85 1 0.1 0.8 0.8 4 nA 300 600 25 60 MHz 5 8 55 120 pF 100 700 25 125 MΩ 1.5 × 1012 5 × 1012 1.5 × 1012 5 × 1012 cm·Hz1/2/W -15 -14 -14 -14 5 × 10 2 × 10 1.4 × 10 4 × 10 W/Hz1/2 Spectral response 1.2 G13176-003P Typ. Max. 1 0 -1 0.8 1.0 1.2 1.4 1.6 1.8 Wavelength (μm) KIRDB0617EA KIRDB0618EA 2 InGaAs PIN photodiodes G13176 series Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 10 nA (Typ. Ta=25 °C, f=1 MHz) 1 nF G13176-010P G13176-010P Terminal capacitance Dark current 1 nA 100 pA G13176-003P 10 pA 100 pF 10 pF G13176-003P 1 pA 0.01 0.1 1 10 1 pF 0.01 100 0.1 Reverse voltage (V) 1 10 100 Reverse voltage (V) KIRDB0619EA KIRDB0620EA Linearity Dark current vs. ambient temperature (Typ. Ta=25 °C, λ=1.55 μm, RL=2 Ω, VR=1 V) 102 (Typ. VR=5 V) 10 μA 1 μA Light spot size: ϕ200 μm 98 96 Light spot size: ϕ50 μm 100 nA Dark current Relative sensitivity (%) 100 G13176-010P 10 nA 1 nA 100 pA G13176-003P 94 10 pA 92 1 pA 90 0 2 4 6 8 10 12 14 16 100 fA -60 -40 -20 0 20 40 60 80 100 120 Ambient temperature (°C) Incident light level (mW) KIRDB0475EA KIRDB0621EA 3 InGaAs PIN photodiodes G13176 series Recommended solder reflow conditions Peak temperature - 5 °C: 30 s max. Peak temperature: 260 °C 3 °C/s max. Temperature (°C) 217 °C -6 °C/s max. 150 to 200 °C Preheat 60 to 120 s Soldering 60 to 150 s 25 °C to peak temperature: 8 min max. Time · After unpacking, store the device in an environment at a temperature range of 5 to 30 °C and a humidity of 60% or less, and perform reflow soldering within 1 year. · Therminal stress applied to the device during reflow soldering differs depending on the PC board and reflow oven being used. · When setting the reflow conditions, make sure that the reflow soldering process does not degrade device reliability. KIRDB0622EA Dimensional outlines (unit: mm) G13176-003P 1.6 0.7 0.5 0.5 0.8 Photosensitive area ϕ0.3 Photosensitive surface Resin 0.55 0.21 0.55 0.1 Anode Cathode 0.7 0.4 0.7 0.75 Tolerance unless otherwise noted: ±0.1 Position accuracy of photosensitive area center to base center -0.25≤X≤+0.05 -0.15≤Y≤+0.15 Recommended land pattern KIRDA0251EA 4 InGaAs PIN photodiodes G13176 series G13176-010P Photosensitive surface Anode 0.285 0.6 0.6 Cathode 1.8 3.1 Photosensitive area ϕ1.0 0.8 ± 0.2 0.8 1.55 0.8 Tolerance unless otherwise noted: ±0.1 Position accuracy of photosensitive area center to base center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 2.0 Resin Recommended land pattern KIRDA0252EA Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions · Disclaimer · Surface mount type products Technical information · Infrared detector Information described in this material is current as of March, 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1131E01 Mar. 2016 DN 5