InGaAs area image sensor
G12460-0606S
Image sensor with 64 × 64 pixels developed
for two-dimensional infrared imaging
The G12460-0606S has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an
indium bump. A timing generator in the ROIC provides an analog video output and AD-TRIG output which are easily obtained by just supplying a master clock (MCLK) and master start pulse (MSP) from external digital inputs.
The G12460-0606S has 64×64 pixels arrayed at a 50 μm pitch and their signals are read out from a single video line. Light
incident on the InGaAs photodiodes is converted into electrical signals which are then input to the ROIC through indium
bumps. Electrical signals in the ROIC are converted into voltage signals by charge amplifiers and then sequentially output
from the video line by the shift register. The G12460-0606S is hermetically sealed in a TO-8 package together with a onestage thermoelectric cooler to deliver low-cost yet highly stable operation.
Features
Applications
Spectral response range: 1.12 to 1.9 μm
Thermal imaging monitor
Excellent linearity by offset compensation
Laser beam profiler
High sensitivity: 1600 nV/e-
Near infrared image detection
Simultaneous charge integration for all pixels
(global shutter mode)
Foreign object detection
Simple operation (built-in timing generator)
One-stage TE-cooled
Low cost
Block diagram
Start
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Shift register
A sequence of operation of the readout circuit is described below.
In the readout circuit, the charge amplifier output voltage is sampled
and held simultaneously at all pixels during the integration time determined by the low period of the master start pulse (MSP) which is as a
frame scan signal. Then the pixels are scanned and their video signals
are output.
Pixel scanning starts from the starting point at the upper left in the
right figure. The vertical shift register scans from top to bottom in the
right figure while sequentially selecting each row.
For each pixel on the selected row, the following operations are performed:
Transfers the sampled and held optical signal information to the signal processing circuit as a signal voltage.
Resets the amplifier in each pixel after having transferred the signal
voltage and transfers the reset voltage to the signal processing circuit.
The signal processing circuit samples and holds the signal voltage
and reset voltage .
The horizontal shift register scans from left to right in the right figure, and the voltage difference between and is calculated in the
offset compensation circuit. This eliminates the amplifier offset voltage in each pixel. The voltage difference between and is output
as the output signal in the form of serial data.
The vertical shift register then selects the next row and repeats the
operations from to . After the vertical shift register advances to the
64th row, the MSP, which is a frame scan signal, goes high. After that,
when the MSP goes high and then low, the reset switches for all pixels
are simultaneously released and the next frame integration begins.
64 × 64 pixels
End
Signal processing circuit
Offset
compensation
circuit
VIDEO
Shift register
KMIRC0043EA
1
InGaAs area image sensor
G12460-0606S
Element structure
Parameter
Image size
Cooling
Number of total pixels
Number of effective pixels
Pixel size
Pixel pitch
Package
Window
Specification
3.2 × 3.2
One-stage TE-cooled
4096 (64 × 64)
4096 (64 × 64)
50 × 50
50
TO-8 16-pin metal (refer to dimensional outline)
Anti-reflective coating borosilicate glass
Unit
mm
pixels
pixels
μm
μm
-
Absolute maximum ratings
Parameter
Supply voltage
Clock pulse voltage
Operating temperature
Storage temperature
TE-cooler allowable current
TE-cooler allowable voltage
Thermistor power dissipation
Symbol
Vdd
V(MCLK)
Topr
Tstg
Ic
Vc
Pth
Value
-0.3 to +5.5
Vdd + 0.5
-10 to +60
-20 to +70
1.3
1.9
0.2
Unit
V
V
°C
°C
A
V
mW
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C, Td=0 °C, Vdd=5 V, PD_bias=4.5 V)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Conversion efficiency
Saturation charge
Symbol
λ
λp
S
CE
Qsat
Saturation output voltage
Vsat
Photoresponse nonuniformity*1
PRNU
Dark voltage
Dark current
Dark output nonuniformity
Readout noise
Dynamic range
Defective pixel*2
VD
ID
DSNU
Nr
DR
-
Condition
λ=λp
After subtracting
dark output
After subtracting
dark output,
Integration time: 1 ms
Integration time: 2 ms
Integration time: 2 ms
Integration time: 0.1 ms
Min.
1.0
-
Typ.
1.12 to 1.9
1.75
1.1
1600
1.3
Max.
-
Unit
μm
μm
A/W
nV/eMe-
1.5
2.0
-
V
-
±10
±20
%
1.0
-
1.3
8
±0.2
800
2500
-
1.6
20
±0.5
1500
1
V
pA
V
μV rms
%
*1: Measured at one-half of the saturation, excluding first and last pixels on each row
*2: Pixels with photoresponse nonuniformity (integration time: 1 ms), readout noise, dark current, dark output, DSNU, or saturation
output voltage higher than the maximum value
One or less cluster of four or more contiguous defective pixels
<Examples of four contiguous defective pixels>
Normal pixel
Defective pixel
KMIRC0060EB
2
InGaAs area image sensor
G12460-0606S
Electrical characteristics (Ta=25 °C)
Parameter
Supply voltage
Supply current
Ground
Element bias
Element bias current
High
Low
Video output voltage
Clock frequency
Video data rate
Thermistor resistance
Symbol
Vdd
I(Vdd)
Vss
PD_bias
I(PDbias)
VH
VL
f
fV
Rth
Min.
4.9
4.4
8.2
Typ.
5
30
0
4.5
3.2
1.2
f/8
9
Max.
5.1
60
4.6
1
40
9.8
Unit
V
mA
V
V
mA
V
MHz
MHz
kΩ
Equivalent circuit
Whole image sensor
THERM
THERM
Thermistor
1 pixel
Reset
Switch
Shift
register
Sample-and-hold Switch
Offset
compensation
circuit
VIDEO
Photodiode
Vb1
0.1 μF
One-stage
TE-cooler
PD_bias
Vdd
Vss
TE(+) TE(-)
Timing
generator
MCLK
AD_TRIG
MSP
External input
KMIRC0063ED
3
InGaAs area image sensor
G12460-0606S
Connection example
Power supply
for digital buffer (D)
GND +5 V
Vdd
+15 V (A)
VIDEO
(signal output)
Power supply
for sensor drive
GND +5 V
Power supply
for analog buffer (A)
GND -15 V +15 V
Temperature
contorol circuit
Vb1
C2
B1
-15 V (A)
+5 V (D)
AD_TRIG
(output for A/D
conversion)
G12460-0606S
C2
B2
C1
+5 V (D)
MCLK (input)
PD_bias
R1
VR1
TE(+)
TE(-)
THERM
THERM
B2
+5 V (D)
MSP (input)
B2
Measurement board
(Reference) Parameter values
(Reference) Buffer
Symbol
Value
Symbol
R1
10 Ω
B1
Type no.
AD847
VR1
10 kΩ
B2
TC74VHCT541
C1
330 pF
C2
0.1 μF
KMIRC0075EA
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InGaAs area image sensor
G12460-0606S
Timing chart
The video output from a single pixel is equal to 8 MCLK (master clock) pulses. The MSP (master start pulse) is a signal for setting the
integration time, so making the low (0 V) period of the MSP longer will extend the integration time. The MSP also functions as a signal
that triggers each control signal to perform frame scan. When the MSP goes from low (0 V) to high (5 V) , each control signal starts on
the falling edge of the MCLK and frame scan is performed during the high period of the MSP.
One frame scanning period [64 rows × 64 columns (including blank) × 8 MCLK]
MCLK
(input)
MSP
(input)
AD_TRIG
(output)
VIDEO
(output)
(Video űŦųŪŰť)
1
(Integration time)* 90 MCLK
8 MCLK
8 MCLK
94 MCLK*2
8 MCLK
8 MCLK
8 MCLK
(1 ch)
(2 ch)
(Blank period)
(65 ch)
(66 ch)
(4096 ch)
(Blank period)
tf(MCLK)
tr(MCLK)
(Blank period)
tpw(MCLK)
t1
tr(MSP)
t2
tf(MSP)
6 MCLK (Reset period)*3
t3
tpw(MSP)
Integration time
*1: A minimum number of MCLK of integration time is 40 MCLK.
*2: There are blanks of 94 MCLK between each row.
*3: A minimum number of MCLK of reset period is 200 MCLK.
KMIRC0044EC
KMIRC0044EC
Parameter
Clock pulse voltage
Symbol
High
Low
tr(MCLK)
tf(MCLK)
tpw(MCLK)
Clock pulse rise/fall times
Clock pulse width
Start pulse voltage
Start pulse rise/fall times
3
Start pulse width*
Start (rise) timing*4
Start (fall) timing*4
Output setting time
V(MCLK)
High
Low
V(MSP)
tr(MSP)
tf(MSP)
tpw(MSP)
t1
t2
t3
Min.
Vdd - 0.5
0
Typ.
Vdd
0
Max.
Vdd + 0.5
0.5
Unit
V
V
0
10
12
ns
10
Vdd - 0.5
0
Vdd
0
Vdd + 0.5
0.5
ns
V
V
0
10
12
ns
0.001
10
10
-
-
2
50
ms
ns
ns
ns
*3: Integration time max.=2 ms
*4: Setting these timings shorter than minimum value may delay the operation by one MCLK pulse and cause malfunction.
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InGaAs area image sensor
G12460-0606S
Spectral response
Photosensitivity temperature characteristics
(Typ. Ta=25 °C)
1.2
(Typ.)
100
90
25 °C
80
Relative sensitivity (%)
Photosensitivity (A/W)
1.0
0.8
0.6
0.4
70
60
0 °C
50
40
30
-10 °C
20
0.2
10
0
0.8
1.2
1.0
1.4
1.6
1.8
0
1.75
2.0
1.85
1.8
Wavelength (μm)
1.9
1.95
Wavelength (μm)
KMIRB0078EA
KMIRB0087EA
Thermistor temperature characteristics
(Typ.)
45
70
40
60
35
50
Element temperature (°C)
Thermistor resistance (kΩ)
Cooling characteristics (TE-cooler)
30
25
20
15
10
5
0
-20 -10
(Typ. Ta=25 °C, thermal resistance of heatsink 0.5 °C/W)
40
30
20
10
0
-10
0
10
20
30
40
50
60
70
-20
-0.4 -0.2
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Current (A)
Temperature (°C)
KMIRB0067EA
KMIRB0054ED
There is the following relation between the thermistor
resistance and temperature (°C).
R1 = R2 × exp B {1/(T1 + 273.15) - 1/(T2 + 273.15)}
R1: Resistance at T1 (°C)
R2: Resistance at T2 (°C)
B: B constant (B=3410 K ± 2%)
Thermistor resistance=9 kΩ (at 25 °C)
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InGaAs area image sensor
G12460-0606S
Current vs. voltage (TE-cooler)
(Typ. Ta=25 °C, thermal resistance of heatsink 0.5 °C/W)
1.4
1.2
0.8
0.6
0.4
0.2
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Voltage (V)
KMIRB0055ED
Dimensional outline (unit: mm)
1 ch
64 ch
4096 ch
10.0 ± 0.2
23 ± 1
ϕ14.0 ± 0.2
Window
ϕ10.0 ± 0.2
4.8 ± 0.3
ϕ15.3 ± 0.2
Photosensitive area
ϕ0.45
Lead
5.7 ± 0.2
Current (A)
1.0
9.5 ± 0.2
Position accuracy of photosensitive area
center with respect to cap center
-0.5≤X≤+0.5
-0.5≤Y≤+0.5
1.9 ± 0.2
Package material: kovar metal
Window material: borosilicate glass with anti-reflective coating
Window sealing method: hermetic
KMIRA0021EB
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InGaAs area image sensor
G12460-0606S
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Name
Vss
Vdd
MCLK
AD_TRIG
MSP
NC
NC
Vdd
PD_bias
Vb1
NC
VIDEO
TE (-)
THERM
THERM
TE (+)
Input/Output
Input
Input
Input
Output
Input
Input
Input
Output
Output
Input
Output
Output
Input
Function
0 V ground
+5 V supply voltage
Clock pulse for timing generator
Signal for A/D sampling
Clock pulse for flame scan start
+5 V supply voltage
Photodiode bias voltage
Pixel bias voltage
Video output
TE-cooler (-)
Thermistor
Thermistor
TE-cooler (+)
Remark
0V
5V
Falling synchronous pulse
Falling synchronous pulse
5V
4.5 V
1.27 V
1.2 to 3.2 V
* Do not connect anything to the NC terminals.
Note: Connect a bypass capacitor of 0.1 μF to the Vb1 terminal.
Precautions
(1) Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic
charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment.
(2) Incident window
If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the
window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab
moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no
spot or stain remains.
(3) Soldering
To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering
should be performed within 5 seconds at a soldering temperature below 260 °C.
(4) Operating and storage environments
Handle the device within the temperature range specified in the absolute maximum ratings. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided.
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InGaAs area image sensor
G12460-0606S
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Image sensors
Information described in this material is current as of May, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
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North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMIR1023E03 May 2015 DN
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