InGaAs area image sensor
G12242-0707W
Near infrared area image sensor with
128 × 128 pixels
The G12242-0707W has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and
back-illuminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by
indium bumps. The timing generator in the ROIC provides an analog video output and AD-TRIG output which are obtained
by just supplying a master clock (MCLK) and master start pulse (MSP) as digital inputs from external sources.
The G12242-0707W has 128 × 128 pixels arrayed at a 20 μm pitch and their signals are read out from a video line. Light
incident on the InGaAs photodiodes is converted into electrical signals which are then input to the ROIC through indium
pumps. Electrical signals in the ROIC are converted into voltage signals by charge amplifiers and then sequentially output
from the video line by the shift register. The G12242-0707W is hermetically sealed in a TO-8 package together with a twostage thermoelectric cooler to deliver low-cost yet highly stable operation.
Features
Applications
Spectral response range: 0.95 to 1.7 μm
Thermal image monitor
High sensitivity: 1 μV/e-
Laser beam profiler
Frame rate: 258 fps max.
Near infrared image detection
Global shutter mode and rolling shutter mode switchable
Foreign object detection
Simple operation (built-in timing generator)
Two-stage TE-cooled
Low cost
Block diagram
Start
www.hamamatsu.com
Vertical shift register
The G12242-0707W operates in either global shutter mode or rolling shutter mode which are switchable. The operation of the readout circuit in each
mode is described below.
Rolling shutter mode
The sample-and-hold switches in all pixels are always ON. Pixel scanning
starts from the top left point as shown in the figure on the right.
The vertical shift register scans from top to bottom while sequentially selecting each row. The following operations to are performed on each
pixel of the selected row.
Transfers the integrated optical signal information to the signal processing
circuit as a signal voltage, and samples and holds the signal voltage.
Resets each pixel after having transferred the signal, transfers the reset
signal voltage to the signal processing circuit, and samples and holds the
reset signal voltage.
The horizontal shift register performs a sequential scan to output the
signal voltage and reset signal voltage as serial data. The offset voltage
in each pixel can be eliminated by finding a difference between the signal
voltage and the reset signal voltage with a circuit outside the sensor.
After the above operations to are complete, the reset switch for each
pixel on the selected row turns off and signal integration begins. At the
same time, the vertical shift register shifts by one row to select the next
row and the operations to are repeated.
After the vertical shift register advances to the 128th row, the master start
pulse (MSP), which is a frame scan signal, changes from low (0 V) to high
(5 V), and the next frame scan begins when the MCLK goes low. The signal
integration time is the time period from right after the end of the n-th row
scan to the timing for holding the optical signal information integrated on
the n-th row in the next frame.
128 × 128 pixels
End
Signal processing circuit
Horizontal shift register
VIDEO
(signal voltage)
VIDEO
(reset voltage)
KMIRC0068EA
1
InGaAs area image sensor
G12242-0707W
Global shutter mode
In this mode, the integration time is equal to the low period of the MSP and the output voltage is sampled and held simultaneously at
all pixels. Then the signals are sequentially read out in the same way as the rolling shutter mode.
The vertical shift register scans from top to bottom while sequentially selecting each row. The following operations to are performed on each pixel of the selected row:
Transfers the optical signal information sampled and held in each pixel to the signal processing circuit as a signal voltage, and samples and holds the signal voltage.
Resets each pixel after having transferred the signal, transfers the reset signal voltage to the signal processing circuit, and samples
and holds the reset signal voltage.
The horizontal shift register performs a sequential scan to output the signal voltage and reset signal voltage as serial data. The offset
voltage in each pixel can be eliminated by finding a difference between the signal voltage and the reset voltage with a circuit outside
the sensor.
Then the vertical shift register shifts by one row to select the next row and the operations to are repeated.
When the MSP, which is a frame scan signal, goes low after the vertical shift register advances to the 128th row, the reset switches for
all pixels simultaneously turn off and the next frame integration begins.
Structure
Parameter
Image size
Cooling
Number of total pixels
Number of effective pixels
Pixel size
Pixel pitch
Package
Window
Specification
2.56 × 2.56
Two-stage TE-cooled
16384 (128 × 128)
16384 (128 × 128)
20 × 20
20
TO-8 16-pin metal (refer to dimensional outline)
Borosilicate glass with anti-reflective coating
Unit
mm
pixels
pixels
μm
μm
-
Absolute maximum ratings
Parameter
Supply voltage
Clock pulse voltage
Start pulse voltage
Operating temperature
Storage temperature
TE-cooler allowable current
TE-cooler allowable voltage
Thermistor power dissipation
Symbol
Vdd
V(MCLK)
V(MSP)
Topr
Tstg
Ic
Vc
Pth
Value
-0.3 to +5.5
Vdd +0.5
Vdd +0.5
-10 to +60
-20 to +70
0.9
0.8
0.2
Unit
V
V
V
°C
°C
A
V
mW
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
2
InGaAs area image sensor
G12242-0707W
Electrical and optical characteristics (Td=15 °C, Vdd=5 V, PD_bias=3 V)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Conversion efficiency
Saturation charge
Saturation output voltage
Symbol
λ
λp
S
CE
Qsat
Vsat
Photoresponse nonuniformity*1
PRNU
Dark output
Dark current
Dark output nonuniformity
Temperature coefficient of dark output
Readout noise
Dynamic range
Defective pixel*2
VD
ID
DSNU
ΔTDS
Nr
DR
-
Condition
λ=λp
Cf=0.08 pF
After subtracting dark output,
Integration time=5 ms
Integration time=10 ms
Min.
0.7
0.6
Typ.
0.95 to 1.7
1.55
0.8
1
1000
1.1
Max.
-
Unit
μm
μm
A/W
μV/ekeV
-
±10
±20
%
-0.2
-
0.3
0.5
±0.05
1.1
500
2200
-
0.5
2.5
±0.2
1000
1
V
pA
V
times/°C
μV rms
%
*1: Measured at one-half of the saturation, excluding first and last pixels on each row
*2: Pixels with photoresponse nonuniformity (integration time 5 ms), readout noise, or dark current higher than the maiximum value
One or less cluster of four or more contiguous defective pixels
<Examples of four contiguous defective pixels>
Normal pixel
Defective pixel
KMIRC0060EB
Electrical characteristics (Ta=25 °C)
Parameter
Supply voltage
Supply current
Ground
Element bias
Element bias current
High
Video output voltage
(VIDEO_S)
Low
Video output voltage (VIDEO_R)
Clock frequency
Video data rate
Thermistor resistance
Symbol
Vdd
I(Vdd)
Vss
PD_bias
I(PD_bias)
VSH
VSL
VR
f
fV
Rth
Min.
4.9
2.9
3.6
2.8
2.8
8.2
Typ.
5
20
0
3.0
4.0
2.9
2.9
f/4
9
Max.
5.1
40
3.1
1
4.1
3.0
3.0
20
9.8
Unit
V
mA
V
V
mA
V
V
MHz
MHz
kΩ
3
InGaAs area image sensor
G12242-0707W
Equivalent circuit
Whole image sensor
THERM
THERM
Thermistor
One pixel
Reset
switch
Vb1
Shift
register
0.1 μF
Sample and hold
switch
VIDEO_S
Photodiode
Cf
VIDEO_R
Two-stage
TE-cooler
PD_bias
Timing
generator
AD_Trig
Vdd Vss Vref TE(+) TE(-) MCLK MSP Mode 1 Mode 2
External input
KMIRC0072EB
4
InGaAs area image sensor
G12242-0707W
Connection example
Supply voltage
for analog buffer (A)
GND -15 V +15 V
Supply voltage
for digital buffer (D)
GND +5 V
Supply voltage
for sensor drive
GND +5 V
Temperature
control circuit
+15 V(A)
VIDEO_S
(signal output)
B1
-15 V(A)
VIDEO_R
(reset signal output)
AD_TRIG
(output for A/D
conversion)
Vb1
Vdd
+15 V(A)
C2
B1
Vref
-15 V(A)
+5 V(D)
R1
G12242-0707W
PD_bias
B2
+5 V(D)
B2
MSP (input)
B2
Mode 1 (input)
B2
Mode 2 (input)
B2
VR1
C2
C1
MCLK (input)
VR1
C2
TE(+)
TE(-)
THERM
THERM
+5 V(D)
+5 V(D)
+5 V(D)
(Reference) Parameter values
Measurement board
(Reference) Buffer
Symbol
Value
Symbol
IC
R1
10 Ω
B1
AD847
VR1
10 kΩ
B2
TC74HCT541
C1
330 pF
C2
0.1 μF
KMIRC0070EB
5
InGaAs area image sensor
G12242-0707W
Timing chart
The video output from a single pixel is equal to 4 MCLK (master clock) pulses. The MSP (master start pulse) is a signal for setting the
integration time, so making the low (0 V) period of the MSP longer will extend the integration time. The MSP also functions as a signal
that triggers each control signal to perform frame scan. When the MSP goes from low (0 V) to high (5 V) , each control signal starts on
the falling edge of the MCLK and frame scan is performed during the high period of the MSP. In the global shutter mode, the low (0 V)
period of the MSP serves as the integration time. In the rolling shutter mode, the integration time for the n-th row is the time period
from right after the end of the n-th row scan to the timing for holding the optical signal information integrated on the n-th row in the
next frame. The timing charts when operated at a MCLK frequency of 20 MHz are shown below.
tr(MCLK)
tf(MCLK)
tpw(MCLK)
t1
tr(MSP)
t2
tf(MSP)
t3
tpw(MSP)
Integration time
during global shutter mode
One frame scanning period [(128 rows × 128 columns × 0.2 μs) (including blank)]
MCLK
(input)
MSP
(input)
AD_TRIG
(output)
VIDEO_S
(output)
VIDEO_R
(output)
MSP Low
űŦųŪŰť*1 4.6 μs 0.2 μs 0.2 μs 4.6 μs 0.2 μs 0.2 μs 4.6 μs 0.2 μs 0.2 μs
(Blank period)*2 (1-1 ch) (1-128 ch) (Blank (2-1 ch) (2-128 ch) (Blank (3-1 ch) (3-128 ch)
period)
period)
A
MSP Low
0.3 μs*3 űŦųŪŰť*1 4.6 μs
0.2 μs 0.2 μs 4.6 μs
(Blank period) (1-1 ch) (1-128 ch) (Blank period)
(128-128 ch) (Blank period)
0.2 μs
Integration time for the first row during rolling shutter mode*4
3.839 ms
B
AD_TRIG
Dummy (2 clocks)
VIDEO_S
VIDEO_R
0.2 μs
0.2 μs
4.6 μs
0.2 μs
n-127 ch n-128 ch Blank period between rows (n+1)-1 ch
0.2 μs
*1: The minimum number of MCLK pulses during the MSP low period is 20. The integration time can be changed by adjusting the MSP
low period.
Rolling shutter mode: Integration time = MSP low period + 3.838 ms
Global shutter mode: Integration time = MSP low period
*2: There is a blank of 4.6 μs between each row.
*3: The blank period after scanning the last channel is 0.3 μs.
*4: The integration time for the first row in the rolling shutter mode is the time period from after 0.15 μs (period “A”) after the first row
is scanned to the timing for holding the optical signal information integrated on the first row in the next frame. (Period “B”: 2.45 μs
from the falling edge of the MCLK pulse right after the MSP goes high)
As with the first row, the integration time for the second row onward is the time period from right after the end of scan on that
row to the timing for holding the optical signal information integrated in the next frame.
From the second row onward, the integration start timing shifts by 30.2 μs right after the end of scan on the preceding row. This
operation is repeated until the 128th row and then returns to the first row.
KMIRC0071EB
6
InGaAs area image sensor
Parameter
Symbol
High
Low
Clock pulse voltage
V(MCLK)
tr(MCLK)
tf(MCLK)
tpw(MCLK)
Clock pulse rise/fall times
Clock pulse width
High
Low
Start pulse voltage
V(MSP)
tr(MSP)
tf(MSP)
tpw(MSP)
t1
t2
t3
Start pulse rise/fall times
3
Start pulse width*
Start (rise) timing*4
Start (fall) timing*4
Output settling time
G12242-0707W
Min.
Vdd - 0.5
0
Typ.
Vdd
0
Max.
Vdd + 0.5
0.5
Unit
V
V
0
10
12
ns
10
Vdd - 0.5
0
Vdd
0
Vdd + 0.5
0.5
ns
V
V
0
10
12
ns
0.001
10
10
-
-
10
50
ms
ns
ns
ns
*3: Integration time max.=10 ms
*4: Setting these timings shorter than the minimum value may delay the operation by one MCLK pulse and cause malfunction.
Operation mode selection block
Operating mode
Rolling shutter mode
Global shutter mode
Mode 1
Low
High
Mode 2
Low
Low
* Low=0 V (Vss), High=5 V (Vdd)
Spectral response
Photosensitivity temperature characteristics
(Typ. Td=25 °C)
1.0
(Typ.)
100
Td=60 °C
90
80
Relative sensitivity (%)
Photosensitivity (A/W)
0.8
0.6
0.4
0.2
Td=40 °C
70
60
Td=20 °C
50
40
30
Td=-10 °C
20
10
0
0.8
1.0
1.2
1.4
1.6
1.8
Wavelength (μm)
0
1.55
1.65
1.60
1.70
1.75
Wavelength (μm)
KMIRB0079EA
Note: chip temperature
KMIRB0072EB
7
InGaAs area image sensor
G12242-0707W
Cooling characteristics of TE-cooler
Thermistor temperature characteristics
(Typ.)
45
40
(Typ. Ta=25 °C, thermal resistance of heatsink 0.5 °C/W)
40
Element temperature (°C)
Thermistor resistance (kΩ)
30
35
30
25
20
15
10
20
10
0
-10
5
0
-20 -10
-20
0
10
20
30
40
50
60
70
Temperature (°C)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Current (A)
KMIRB0067EA
KMIRB0073EA
There is the following relation between the thermistor
resistance and temperature (°C).
R1 = R2 × exp B {1/(T1 + 273.15) - 1/(T2 + 273.15)}
R1: Resistance at T1 (°C)
R2: Resistance at T2 (°C)
B: B constant (B=3410 K ± 2%)
Thermistor resistance=9 kΩ (at 25 °C)
Current vs. voltage (TE-cooler)
0.9
(Typ. Ta=25 °C, thermal resistance of heatsink 0.5 °C/W)
0.8
0.7
Current (A)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.1
0.2
0.3
0.4
0.5
Voltage (V)
0.6
0.7
0.8
KMIRB0074EA
8
InGaAs area image sensor
G12242-0707W
Dimensional outline (unit: mm)
1 ch
128 ch
16384 ch
23 ± 2
Photosensitive surface
10.0 ± 0.2
ϕ14.0 ± 0.2
Window
ϕ10.0 ± 0.2
7.2 ± 0.3
ϕ15.3 ± 0.2
ϕ0.45
ġōŦŢť
5.7 ± 0.2
9.5 ± 0.2
Position accuracy of
photosensitive area center
with respect to cap center
-0.5≤X≤+0.5
-0.5≤Y≤+0.5
1.9 ± 0.2
Package: Kovar
Window: borosilicate glass with
anti-reflective coating
Window sealing method: hermetic
KMIRA0028EB
Pin connections
Pin no.
Name
Input/Output
Vss
Input
1
2
Vdd
Input
3
MCLK
Input
4
AD_TRIG
Output
5
MSP
Input
6
Mode 1
Input
7
Mode 2
Input
8
Vb1
Output
9
PD_bias
Input
10
Vref
Input
11
VIDEO_R
Output
12
VIDEO_S
Output
13
TE (-)
Input
14
THERM
Output
15
THERM
Output
16
TE (+)
Input
Note: Connect a bypass capacitor of 0.1 μF to the Vb1
Function
0 V ground
+5 V power supply
Control pulse for timing generator
A/D sampling signal
Frame scan start pule
Mode switching
Mode switching
Pixel bias voltage (internally generated)
Photodiode bias voltage
CMOS drive voltage
Video output after reset
Video output after integration
Terminal for thermoelectric cooler (-)
Terminal for thermistor
Terminal for thermistor
Terminal for thermoelectric cooler (+)
Remark
0V
5V
Syochronized with falling edge
Syochronized with falling edge
0.5 V
3.0 V
3.0 V
2.9 V typ.
2.9 to 4.0 V typ.
terminal.
9
InGaAs area image sensor
G12242-0707W
Precautions
(1) Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic
charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment.
(2) Incident window
If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the
window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab
moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no
spot or stain remains.
(3) Soldering
To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering
should be performed within 5 seconds at a soldering temperature below 260 °C.
(4) Operating and storage environments
Handle the device within the temperature range specified in the absolute maximum ratings. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Image sensors/Precautions
Information described in this material is current as of June, 2014.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMIR1022E03 Jun. 2014 DN
10