p10090-01 etc kird1099e

InAs photovoltaic detectors
P10090 series
P7163
Low noise, high reliability infrared detectors
(for 3 μm band)
InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors,
and also feature low noise, high speed and high reliability. P10090 series is a new family of InAs photovoltaic detectors that
deliver even lower noise than our convensional products (P8079 series).
Various types are available, including non-cooled type, thermoelectrically cooled type (P10090 series), and liquid nitrogen
cooled type (P7163) that delivers high performance.
Features
Applications
Low noise
Gas analysis
High detectivity (D*)
Laser detection
High reliability
Infrared spectrophotometry
Available in multi-element arrays (custom product)
Radiation thermometer
Options (sold separately)
Heatsink for one/two-stage TE-cooled type A3179-01
Temperature controller C1103-04
Infrared detector module with preamp C12492-210
Amplifiers for InAs photovoltaic detector
(P10090 series: C4159-06, P7163: C4159-05)
Structure/Absolute maximum ratings
Absolute maximum ratings
Nitrogen Photosensitive Thermoelectric Thermistor Reverse Operating
Storage
Maximum
Cooling hold time
area
cooler allowable
power
voltage temperature temperature incident
current
Topr
Tstg
light level
dissipation
VR
(°C)
(°C)
(W)
(h)
(mm)
(A)
(mW)
(V)
TO-5
Non-cooled
One-stage
1.5
TE-cooled
-40 to +80
ϕ1
TO-8
0.2
0.5
-40 to +60
0.6
Two-stage
1.0
TE-cooled
Metal dewer
12 *2
ϕ1
-55 to +60
LN2
Dimensional
outline/
Type No.
Package
Window
material *1
P10090-01
/S
P10090-11
/S
P10090-21
P7163
/S
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
*1: S=Sapphire glass
*2: At the time of shipment
www.hamamatsu.com
1
InAs photovoltaic detectors
P10090 series, P7163
Electrical and optical characteristics (Typ. unless otherwise noted)
Type no.
P10090-01
P10090-11
P10090-21
P7163
Measurement
Peak
Photo
condition
Cutoff
sensitivity
sensitivity Shunt resistance
D*
wavelength
Element
wavelength
S
Rsh
(λp, 600, 1)
λc
temperature
λp
λ=λp
Td
Typ.
Min.
Typ.
Min.
(°C)
(μm)
(μm)
(A/W)
(Ω)
(Ω)
(cm · Hz1/2/W) (cm · Hz1/2/W)
25
3.35
3.65
1.0
40
70
3.0 × 109
4.5 × 109
-10
3.30
3.55
250
400
1.0 × 1010 1.6 × 1010
1.2
-30
3.25
3.45
1000
1300
2.0 × 1010 3.2 × 1010
5
6
-196
3.00
3.1
1.3
1 × 10 1 × 10 3.5 × 1011 *3 6.0 × 1011 *3
NEP
λ=λp
Rise time
tr
VR=0 V
RL=50 Ω
0 to 63%
(W/Hz1/2)
1.5 × 10-11
5.3 × 10-12
2.8 × 10-12
1.5 × 10-13
(μs)
0.70
0.45
0.30
0.10
*3: D* (λp, 1200, 1)
Spectral response (D*)
Spectral response
(Typ.)
12
10
(Typ.)
1.4
P7163
(Td=-196 °C)
1.2
P10090-21 (Td=-30 °C)
Photo sensitivity (A/W)
D* (cm · Hz1/2/W)
1011
1010
10
9
P10090-11
(Td=-10 °C)
P10090-01
(Td=25 °C)
8
10
1.0
0.8
Td=-10 °C
0.6
Td=-30 °C
0.4
0.2
Td=25 °C
7
10
1
2
3
4
Wavelength (μm)
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Wavelength (μm)
KIRDB0356ED
KIRDB0381EB
2
InAs photovoltaic detectors
P10090 series, P7163
Dark current vs. reverse voltage
Shunt resistance vs. element temperature (P10090 series)
(Typ.)
1 mA
(Typ.)
100 kΩ
Td=25 °C
10 kΩ
Shunt resistance
Dark current
100 μA
Td=-10 °C
Td=-30 °C
10 μA
1 kΩ
100 Ω
10 Ω
1 μA
0.01
0.1
1Ω
-100
1
-80
Reverse voltage (V)
-60
-40
-20
0
20
40
60
Element temperature (°C)
KIRDB0382EB
KIRDB0383EA
Linearity
Sensitivity uniformity
(Typ. Ta=25 °C, λ=1.3 μm)
1000
(Typ. λ=1.55 μm)
110
Td=-10 °C
100
Relative sensitivity (%)
Photocurrent (μA)
90
100
10
Td=10 °C
80
Td=25 °C
70
60
50
40
30
1
1
10
100
1000
10000
20
-600
-400
-200
0
200
400
600
Position on photosensitive area (μm)
Incident light level (μW)
KIRDB0384EB
KIRDB0385EB
3
InAs photovoltaic detectors
P10090 series, P7163
Current vs. voltage of TE-cooled type
Cooling characteristics of TE-cooled type
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
1.6
1.4
20
Current (A)
Element temperature (°C)
One-stage
TE-cooled type
1.2
1.0
0.8
0.6
Two-stage
TE-cooled type
0.4
0.2
0
(Typ. Ta=25 °C, Thermal resistance of heat sink=3 °C/W)
30
10
One-stage
TE-cooled type
0
-10
-20
-30
Two-stage
TE-cooled type
-40
0
0.2
0.4
0.6
0.8
1.0
1.2
-50
0
0.4
0.8
1.2
1.6
TE-cooled current (A)
Voltage (V)
KIRDB0115EB
KIRDB0181EA
Thermistor temperature characteristic
(Typ.)
6
10
Resistance (Ω)
5
10
104
103
-40
-30
-20
-10
0
10
20
30
Element temperature (°C)
KIRDB0116EA
4
InAs photovoltaic detectors
P10090 series, P7163
Measurement circuit
Chopper
600 Hz
Detector
rms
meter
Band-pass
filter
fo=600 Hz
∆f=60 Hz
Black body
KIRDC0075EA
Dimensional outline (unit: mm)
P10090-01
P10090-11/-21
ϕ9.1 ± 0.3
ϕ15.3 ± 0.2
ϕ8.1 ± 0.1
Window
ϕ5.5 ± 0.1
10 ± 0.2
a
4.2 ± 0.2
2.3 ± 0.2
Photosensitive
surface
12 min.
ϕ0.45
lead
Window
ϕ10 ± 0.2
18 min.
0.4 max.
Photosensitive
surface
ϕ14 ± 0.2
ϕ0.45
lead
ϕ5.1 ± 0.2
10.2 ± 0.2
ϕ1.0 max.
5.1 ± 0.2
Detector (anode)
Detector (cathode)
TE-cooler (-)
TE-cooler (+)
Thermistor
Case
P10090-11 P10090-21
5.1 ± 0.2
a
4.5 ± 0.2
6.9 ± 0.2
KIRDA0191EA
KIRDA0219EA
5
InAs photovoltaic detectors
P10090 series, P7163
P7163
44.5 ± 1 46 ± 1
32 ± 1
ϕ51 ± 1
LN2 fill port ϕ12.5 ± 0.5
ϕ63.5 ± 1
ϕ28.5 ± 0.5
172 ± 2
95 ± 1
102 ± 1
72 ± 1
Output
pin
10 ± 0.5
ϕ66.8 ± 1
10 ± 1
37 ± 1
Photosensitive
surface
6.5 ± 0.5
Pump-out
pipe ϕ9.5
Detector (anode)
NC
Detector (cathode)
KIRDA0033EE
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Metal, Ceramic, Plastic products
Technical information
∙ Infrared detector / technical information
Information described in this material is current as of August, 2014.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KIRD1099E08 Aug. 2014 DN
6