VLMU5200-...-140 Datasheet

VLMU5200-...-140
www.vishay.com
Vishay Semiconductors
UV SMD LED with Silicone Lens
FEATURES
• Ceramic SMT package with silicone lens
• Dimensions (L x W x H) in mm: 5.2 x 5.2 x 3.1
• Forward current: up to 700 mA
• Radiant power (typ.): 2500 mW at 500 mA,
3600 mW at 700 mA
• Materials:
- Die: InGaN
- Resin: silicone (water clear)
- L / F finish: AIN with Au plating
• Grouping parameters:
- Radiant power
- Peak wavelength
- Forward voltage
• Reflow soldering method
DESCRIPTION
The VLMU5200-...-140 series comprises 3 high brightness
UV LED types within an overall wavelength range from
380nm to 410nm. The ceramic based high power package
with silicone lens features a good longterm stability against
thermal exposure and UV light irradiation and therefore
a long life time. The package size is 5.2 mm x 5.2 mm x
3.1 mm, and the radiant power up to 4400 mW at 700 mA,
with 4 LED chips connected in series.
• MSL2 according to J-STD-020
• Packaging: 12 mm tape with 100 pieces per reel,
Ø 180 mm (7")
PRODUCT GROUP AND PACKAGE DATA
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
• Product group: LED
• Package: SMD ceramic high power
• Product series: high power UV LED
APPLICATIONS
• Angle of half intensity: ± 70°
• Industrial curing
• Lead-finishing: Au
• Photocatalytic purification
• Poster printing curing
SAFETY ADVICES
• Counterfeit money detector
Depending on the mode of operation, these devices emit
highly concentrated non visible ultraviolet light which can be
hazardous to the human eye. Products which incorporate
these devices have to follow the safety precautions given in
IEC 62471 “Photobiological Safety of Lamp and Lamp
Systems”.
• Blood detector
• Nail curing
• Teeth curing
PARTS TABLE
PART
COLOR
RADIANT POWER
(mW)
MIN. TYP. MAX.
at
IF
(mA)
WAVELENGTH
(nm)
MIN. TYP. MAX.
at
IF
(mA)
FORWARD
VOLTAGE
(V)
MIN. TYP. MAX.
at
IF
(mA)
TECHNOLOGY
VLMU5200-385-140
Ultraviolet 1800 2500
3300
500
380
385
390
500
13
14.5
16
500
InGaN
VLMU5200-395-140
Ultraviolet 1800 2500
3300
500
390
395
400
500
13
14.5
16
500
InGaN
VLMU5200-405-140
Ultraviolet 1800 2500
3300
500
400
405
410
500
13
14.5
16
500
InGaN
Rev. 1.2, 23-May-16
Document Number: 84832
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VLMU5200-...-140
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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
VLMU5200-...-140
PARAMETER
SYMBOL
VALUE
UNIT
DC forward current
TEST CONDITION
IF
700
mA
Power dissipation
PV
11.2
W
ESD
2000
V
Tj
+150
°C
Electrostatic discharge
HBM: MIL-STD-883 C 3B
Junction temperature
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
Solder temperature
Tsol
260
°C
RthJS
2.4
°C/W
Thermal resistance - junction to solder point
OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 
VLMU5200-...-140, ULTRAVIOLET
PARAMETER
Forward voltage
TEST CONDITION
DEVICE TYPE
IF = 500 mA
SYMBOL
MIN.
TYP.
MAX.
UNIT
VF
13.0
14.5
16.0
V
1300
1950
2350
1800
2500
3300
2480
3600
4400
le
-
0.28
-
380
385
390
nm
p
390
395
400
nm
400
405
410
nm
-
± 70
-
deg
IF = 350 mA
Radiant power
e
IF = 500 mA
IF = 700 mA
Ratio: radiant intensity /
radiant power
IF = 500 mA
Peak wavelength
IF = 500 mA
Angle of half intensity
IF = 500 mA
VLMU5200-385-140
VLMU5200-395-140
VLMU5200-405-140

mW
sr-1
Note
• Tolerances: ± 11 % for e, ± 0.1 V for VF, ± 2 nm for p.
RADIANT POWER CLASSIFICATION (IF = 500 mA)
GROUP
MIN.
MAX.
PA8
1800
1900
PA9
1900
2000
PB0
2000
2100
PB1
2100
2200
PB2
2200
2300
PB3
2300
2400
PB4
2400
2500
PB5
2500
2600
PB6
2600
2700
PB7
2700
2800
PB8
2800
2900
PB9
2900
3000
PC0
3000
3100
PC1
3100
3200
PC2
3200
3300
Rev. 1.2, 23-May-16
UNIT
mW
Document Number: 84832
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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PEAK WAVELENGTH CLASSIFICATION (IF = 500 mA)
GROUP
MIN.
MAX.
Q380
380
385
Q385
385
390
Q390
390
395
Q395
395
400
Q400
400
405
Q405
405
410
UNIT
nm
FORWARD VOLTAGE CLASSIFICATION (IF = 500 mA)
GROUP
MIN.
MAX.
W1314
13.0
14.0
W1415
14.0
15.0
W1516
15.0
16.0
UNIT
V
Note
• In order to ensure availability, single groups for radiant intensity, wavelength, and forward voltage will not be orderable. Only one group for
radiant intensity, wavelength, and forward voltage will be shipped in any one reel.
MARKING EXAMPLE FOR SELECTION CODE ON LABEL
Selection code: PA9Q385W1415
PA9  e
Q385  p
W1415  VF
140
800
120
700
IF - Forward Current (mA)
φe rel. - Relative Radiant Power (%)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
80
60
40
20
600
500
400
300
200
100
0
0
0
100 200 300 400 500 600 700 800
IF - Forward Current (mA)
Fig. 1 - Relative Radiant Power vs. Forward Current
Rev. 1.2, 23-May-16
0
2
4
6
8
10
12
14
16
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Document Number: 84832
3
For technical questions, contact: [email protected]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
Axis Title
80
385 nm
405 nm
1000
1st line
2nd line
60
40
100
20
0
2nd line
Φe rel - Relative Radiant Flux
1.4
10
340
360
380
400
420
440
10000
1.2
1.0
1000
0.8
0.6
100
0.4
0.2
0
460
10
-40
-20
0
20
40
60
80
100
Wavelength (nm)
2nd line
Tamb - Ambient Temperature (°C)
2nd line
Fig. 3 - Relative Spectral Power vs. Wavelength
Fig. 6 - Relative Radiant Flux vs. Ambient Temperature
20°
Axis Title
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
0
10000
6
4
1000
2
1st line
2nd line
10°
2nd line
Δλp - Change of Peak Wavelength (nm)
Ie, rel - Relative Radiant Intensity
0°
ϕ - Angular Displacement
2nd line
Relative Spectral Power (%)
Axis Title
10000
1st line
2nd line
395 nm
100
0
-2
100
-4
-6
10
-40
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
2nd line
Fig. 7 - Change of Peak Wavelength vs. Ambient Temperature
Axis Title
1000
10000
3
800
700
RthJA = 10 °C/W
RthJA = 15 °C/W
600
500
400
300
200
100
0
0
20
40
60
80
100 120 140 160
2
1000
1
1st line
2nd line
900
2nd line
dVF - Change of Forward Voltage (V)
IF max. - Max. Forward Current (mA)
Fig. 4 - Relative Intensity vs. Wavelength
0
100
-1
-2
-3
10
-40
Tamb - Ambient Temperature (°C)
Fig. 5 - Maximum Forward Current vs. Ambient Temperature
Rev. 1.2, 23-May-16
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
2nd line
Fig. 8 - Change of Forward Voltage vs. Ambient Temperature
Document Number: 84832
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VLMU5200-...-140
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Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
4.8
3.8
2.8
0.6
Electrically neutral
thermal pad
Technical drawings
according to DIN
specification.
1
3
1
4
2
4.2
4.9
3.6
0.6
3
2
4
Recommended solder
pad footprint
0.3 x 45°
Cathode
Anode
0.5
0.6
4.9
4.2
3.6
3.1
R2.4
5.2
0.6
5.2
2.8
3.8
4.8
Not indicated tolerances ± 0.13
Drawing-No.: 6.541-5109.01-4
Issue: prel; 23.05.16
Cathode mark
Rev. 1.2, 23-May-16
Document Number: 84832
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VLMU5200-...-140
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Vishay Semiconductors
TAPE AND REEL DIMENSIONS in millimeters
Rev. 1.2, 23-May-16
Document Number: 84832
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SOLDERING PROFILE
FINAL PACKING
The sealed reel is packed into a cardboard box. A secondary
cardboard box is used for shipping purposes.
IR Reflow Soldering Profile for Lead (Pb)-free Soldering
Preconditioning acc. to JEDEC level 2
300
Temperature (°C)
RECOMMENDED METHOD OF STORAGE
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
Dry box storage is recommended as soon as the aluminum
bag has been opened to prevent moisture absorption. The
following conditions should be observed, if dry boxes are
not available:
200
max. 30 s
150
max. 100 s
max. 120 s
• Storage temperature 10 °C to 30 °C
100
• Storage humidity  60 % RH max.
max. ramp down 6 °C/s
max. ramp up 3 °C/s
50
0
0
50
100
150
Time (s)
19885-2
200
250
300
After more than 1 year under these conditions moisture
content will be too high for reflow soldering.
In case of moisture absorption, the devices will recover to
the former condition by drying under the following condition:
max. 2 cycles allowed
Fig. 9 - Vishay Lead (Pb)-free Reflow Soldering Profile
(acc. to J-STD-020C)
192 h at 40 °C + 5 °C / - 0 °C and < 5 % RH (dry air /
nitrogen) or
24 h at 60 °C + 5 °C and < 5 % RH for all device containers
or
24 h at 100 °C + 5 °C not suitable for reel or tubes.
BAR CODE PRODUCT LABEL (example only)
A
An EIA JEDEC® standard JESD22-A112 level 2 label is
included on all dry bags.
B
C
D
L
E
I
G
F
H
J
K
A. 2D barcode
B. Vishay part number
C. Quantity
D. SEL = selection code (binning)
E. Code of manufacturing plant
F. Batch = date code: year / week / plant code
G. Region code
H. SL = sales location
I. Terminations finishing
J. Lead (Pb)-free symbol
K. Halogen-free symbol
L. RoHS symbol
17028
Example of JESD22-A112 level 2 label
DRY PACKING
ESD PRECAUTION
The reel is packed in an anti-humidity bag to protect the
devices from absorbing moisture during transportation and
storage.
Proper storage and handling procedures should be followed
to prevent ESD damage to the devices especially when they
are removed from the antistatic shielding bag. Electrostatic
sensitive devices warning labels are on the packaging.
Aluminum bag
Label
Reel
VISHAY SEMICONDUCTORS STANDARD
BAR CODE LABELS
The Vishay Semiconductors standard bar code labels are
printed at final packing areas. The labels are on each
packing unit and contain Vishay Semiconductors specific
data.
15973
Rev. 1.2, 23-May-16
Document Number: 84832
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000