Datasheet

MEMS-FPI spectrum sensor
C13272-01
Ultra-compact near infrared spectrum sensor
that integrates MEMS tunable filter and photosensor
The MEMS-FPI spectrum sensor is a ultra-compact sensor that houses a MEMS-FPI (Fabry-Perot Interferometer) tunable filter
that can vary its transmission wavelength depending on the applied voltage and InGaAs PIN photodiode in a single package.
The spectral response range is 1550 to 1850 nm. It is suitable for installation in compact devices for identifying materials in
plastic and solutions and other similar applications.
Features
Applications
Built-in Hamamatsu InGaAs PIN photodiode single
element chip
Screening of plastic, solutions, and the like
Spectral response range: 1550 to 1850 nm
Installation into mobile measuring devices
Ultra-compact: TO-5 package
Gas detection
Use in combination with portable devices such as
smartphones and tablets.
Ultra light: 1 g
Hermetically sealed package: high reliability under
high humidity
Built-in thermistor
Absolute maximum ratings (Ta=25 °C, unless otherwise noted)
Parameter
Filter control voltage*1
Photosensor reverse voltage
Photosensor forward current
Operating temperature*2
Storage temperature*2
Recommended soldering conditions
Value
Vλ1550nm + 0.5
1
10
-40 to +85
-40 to +125
260 °C or less, within 10 s
Unit
V
V
mA
°C
°C
-
*1: Applying a voltage that is +0.5 V or higher than Vλ1550nm (filter control voltage to transmit light at λ=1550 nm) at a specific temperature
may damage the MEMS-FPI tunable filter. For Vλ1550nm of individual products at Ta=25°C, see the final inspection sheet.
*2: No condensation
When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
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1
MEMS-FPI spectrum sensor
C13272-01
Electrical and optical characteristics of MEMS-FPI spectrum sensor (Ta=25 °C, unless otherwise noted)
Parameter
Spectral response range*3
Spectral resolution (FWHM)*4
Wavelength temperature dependence*5
Wavelength reproducibility*6
Settling time
(0 V→Vλ1550nm)*7
Dark current*8
Thermistor resistance
Symbol
λ
-
Min.
-
Typ.
1550 to 1850
±2
Max.
20
0.9
-
Unit
nm
nm
nm/°C
nm
-
-
1
-
ms
ID
-
9.6
4
-
40
10.4
nA
kΩ
*3: Use a band-pass filter that cuts wavelength outside the spectral response range.
*4: Incident angle=0°, photosensor NA=0.09
*5: λ=1550 nm
*6: When filter control voltage, incident light condition, and usage environment, etc. are constant
*7: Time for the output signal to reach 99% of the stable signal level when the control voltage of the MEMS-FPI tunable filter is varied
from 0 V to Vλ1550nm
*8: VR=0.5 V
Electrical and optical characteristics of built-in InGaAs PIN photodiode (Ta=25 °C, unless otherwise noted)
Parameter
Photosensitive area
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Detectivity
Noise equivalent power
Terminal capacitance
Symbol
A
λ
λp
S
D*
NEP
Ct
Condition
Min.
λ=λp
λ=λp
λ=λp
VR=0 V, f=1 MHz
1800
1.0
9 × 1010
-
Filter control voltage vs. element temperature (typical example)
(Incident angle=0°, photosensor NA=0.09)
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-50
-25
0
25
50
75
100
Element temperature (°C)
Max.
2050
9 × 10-14
20
Unit
mm
nm
nm
A/W
cm·Hz1/2/W
W/Hz1/2
pF
Peak transmisson wavelength vs. filter control voltage (typical example)
1900
Peak transmission wavelength (nm)
Deviation from Vλ1550nm (Ta=25 °C) (V)
0.8
Typ.
ϕ0.1
900 to 2100
1950
1.2
2.5 × 1011
4 × 10-14
8
(Ta=25 °C, incident angle=0°, photosensor NA=0.09)
1850
1800
1750
1700
1650
1600
1550
1500
20
25
30
35
40
Filter control voltage (V)
KACCB0400EA
KACCB0401EA
2
MEMS-FPI spectrum sensor
C13272-01
Spectral resolution vs. peak transmisson wavelength (typical example)
Spectral resolution (FWHM) (nm)
20
(Ta=25 °C, incident angle=0°, photosensor NA=0.09)
18
16
14
12
10
1550
1600
1650
1700
1750
1800
1850
Peak transmisson wavelength (nm)
KACCB0402EA
Peak transmission wavelength vs. element temperature (typical example)
Peak transmission wavelength (nm)
1900
(Incident angle=0°, photosensor NA=0.09)
Vλ1850nm
Vλ1750nm
Vλ1700nm
Vλ1650nm
Vλ1550nm
1850
1800
1750
1700
1650
1600
1550
1500
-50
-25
0
25
50
75
100
Element temperature (°C)
KACCB0403EB
3
MEMS-FPI spectrum sensor
C13272-01
Thermistor resistance vs. temperature (typical example)
Thermistor resistance (kΩ)
1000
100
10
1
-50
-25
0
25
50
75
100
Temperature (°C)
KACCB0404EB
Transmittance of MEMS-FPI tunable filter vs. wavelength (typical example)
100
90
Transmittance (%)
80
70
[Ta=25 °C, input line spectrum, line spectrum resolution (FWMH)= 3 nm max.,
incident angle=0°, photosensor NA=0.09]
Vλ1850nm
Vλ1750nm
Vλ1700nm
Vλ1650nm
Vλ1550nm
60
50
40
30
20
10
0
1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950
· Unwanted transmission in a range outside the spectral response range may occur due to higher order
mode and the like as a MEMS-FPI tunable filter’s
feature. Use of a band-pass filter is recommended
for removing this effect if a white light is taken for
a source.
· There is tolerance in filter control voltage for arbitrary peak transmission wavelength from unit to
unit. The individual data for Vλ1850nm and Vλ1550nm
at Ta=25 °C is to be described in an inspection
sheet attached with a product on delivery.
Wavelength (nm)
KACCB0405EA
4
MEMS-FPI spectrum sensor
C13272-01
Dimensional outline (unit: mm)
ϕ9.14 ± 0.2
ϕ8.2 ± 0.1
ϕ1.5 ± 0.1
Photosensitive area ϕ0.1
Filter ϕ0.75
Photosensitive area position accuracy: ±0.25
Filter position accuracy: ±0.3
(with respect to center of package base)
5.81 ± 0.2
+0.25
3.09 - 0.2
5.5 ± 0.5
0.41 ± 0.1
Photosensitive surface
2.04 - 0.2
MEMS-FPI tunable filter
+0.25
Borosilicate glass
[Transmittance 90% min.
(1550 to 1850 nm)]
ϕ0.45
Lead
45° ± 3°
ϕ5.8 ± 0.2
CASE
LOW-MIR
NTC-2
NTC-1
UP-MIR
CASE
InGaAs-Anode
InGaAs-Cathode
KACCA0385EA
Pin connections
Pin no.
1
2
3
4
5
6
7
8
Name
CASE
LOW-MIR
NTC-2
NTC-1
UP-MIR
CASE
InGaAs-Anode
InGaAs-Cathode
Input/Output
Input
Output
Output
Input
Output
Output
Description
Case connection
MEMS-FPI tunable filter lower electrode
For thermistor
For thermistor
MEMS-FPI tunable filter upper electrode
Case connection
5
MEMS-FPI spectrum sensor
C13272-01
Marking information
DataMatrix
**#####
DataMatrix
Type no.
72
32
C 1 - 01
C13272-01
Marking on cap
Description
Shape: rectangle
Cell size: 0.14 × 0.14 mm
Symbol size: 12 × 26 cell
Input information: C13272-01, **#####
(“Type no.” + “,” + “Serial no.”)
Type no.
Serial no.
**: information on year and month
#####: number of five digits
(number of individual product)
**#
##
##
Marking item
Serial no.
Note: KEYENCE 2-D code reader SR-1000 is recommended for
reading the DataMatrix.
KACCC0837EA
Connection example
LOW-MIR
MEMS-FPI
tunable filter
DC voltage
control unit
UP-MIR
I/V amplifier
InGaAs-Cathode
CASE
InGaAs
PIN photodiode
Thermistor
InGaAs-Anode
NTC-2
NTC-1
Control signal
PC
ADC
Temperature
monitor
MEMS-FPI spectrum sensor
KACCC0804EA
MEMS-FPI spectrum sensor structure
The MEMS-FPI spectrum sensor is composed of a MEMS-FPI tunable filter, photosensor (photodiode), and the like. It has a simple structure in which a MEMS-FPI tunable filter and photosensor is arranged on the same axis as the direction of the incident light. Though this
product is a spectrum sensor, it uses a single-element photosensor and does not require an expensive multichannel photosensor.
Internal structure
MEMS-FPI
tunable filter
Spacer
Photosensor
Wiring board
KIRDC0108EA
6
MEMS-FPI spectrum sensor
C13272-01
MEMS-FPI tunable filter
The MEMS-FPI tunable filter has an upper mirror and a lower mirror that are placed opposite each other with an air gap in between
them. When a voltage is applied across the mirrors, an electrostatic attractive force is produced to adjust the air gap. To facilitate this
action, the upper mirror has a membrane (thin film) structure. If the air gap is mλ/2 (m: integer), it functions as a filter that allows
wavelengths near λ to pass through. When the filter control voltage is increased, the air gap is narrowed by the electrostatic attractive
force, and the transmission peak wavelength shifts to the short-wavelength side.
MEMS-FPI tunable filter cross section
White light
Sacrificial layer etching hole
Upper mirror
Lower mirror
Substrate
Air gap
Transmission wavelength λ
KIRDC0109EA
Precautions
Note the following when handling the product and also after installing into a device.
Handling
∙ When touching the product, it is recommended to wear gloves or use tweezers. Touching the product with bare hands may cause
degradation in characteristics and plating corrosion and may lead to problems with solder wettability.
∙ Perform work in a clean place.
Filter control voltage
∙ Apply filter control voltage as defined by the absolute maximum ratings. Applying a filter control voltage exceeding the absolute maximum ratings may damage the MEMS-FPI tunable filter.
Static electricity
∙ The MEMS-FPI spectrum sensor is an electrostatic sensitive device. When handling the product, precautions need to be taken to avoid
damage and deterioration due to static electricity.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Safety consideration
Technical information
∙ MEMS-FPI spectrum sensor/Q&A
∙ Infrared detectors
7
MEMS-FPI spectrum sensor
C13272-01
Information described in this material is current as of April, 2016.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KACC1250E01 Apr. 2016 DN
8
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