Data Sheet

SO
T2
23
PBSS5240Z
40 V, 2 A PNP low VCEsat (BISS) transistor
15 October 2014
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power
SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4240Z
2. Features and benefits
•
•
•
•
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
DC-to-DC conversion
Supply line switching
Battery charger
LCD backlighting
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-40
V
IC
collector current
-
-
-2
A
ICM
peak collector current
tp ≤ 1 ms; single pulse
-
-
-3
A
RCEsat
collector-emitter
saturation resistance
IC = -1 A; IB = -100 mA; pulsed;
-
-
320
mΩ
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
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PBSS5240Z
NXP Semiconductors
40 V, 2 A PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
B
base
2
C
collector
3
E
emitter
4
C
collector
Simplified outline
Graphic symbol
2, 4
4
1
1
2
3
SC-73 (SOT223)
3
sym028
6. Ordering information
Table 3.
Ordering information
Type number
PBSS5240Z
Package
Name
Description
Version
SC-73
plastic surface-mounted package with increased heatsink; 4
leads
SOT223
7. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS5240Z
S5240Z
PBSS5240Z
Product data sheet
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PBSS5240Z
NXP Semiconductors
40 V, 2 A PNP low VCEsat (BISS) transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
-40
V
VCEO
collector-emitter voltage
open base
-
-40
V
VEBO
emitter-base voltage
open collector
-
-7
V
IC
collector current
-
-2
A
ICM
peak collector current
-
-3
A
IB
base current
-
-300
mA
IBM
peak base current
tp ≤ 1 ms; single pulse
-
-1
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
0.65
W
[2]
-
1
W
[3]
-
1.35
W
tp ≤ 1 ms; single pulse
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
006aac674
1.5
(1)
Ptot
(W)
(2)
1.0
(3)
0.5
0.0
-75
Fig. 1.
-25
25
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
2
75
125
175
Tamb (°C)
Power derating curves
PBSS5240Z
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PBSS5240Z
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40 V, 2 A PNP low VCEsat (BISS) transistor
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
Min
Typ
Max
Unit
[1]
-
-
192
K/W
[2]
-
-
125
K/W
[3]
-
-
93
K/W
-
-
16
K/W
thermal resistance
from junction to solder
point
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
2
aaa-013276
103
Zth(j-a)
(K/W)
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
duty cycle = 1
102
0.75
0.33
0.50
0.20
0.10
0.05
10
0.02
0
1
10-5
0.01
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, single-sided copper, tin-plated and standard footprint.
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5240Z
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PBSS5240Z
NXP Semiconductors
40 V, 2 A PNP low VCEsat (BISS) transistor
aaa-013277
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.50
0.75
0.33
0.20
0.10
10
0.05
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
2
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-013278
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.50
0.33
0.20
0.10
10
0.05
0.02
0.01
1
10-5
0
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
2
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5240Z
Product data sheet
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PBSS5240Z
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40 V, 2 A PNP low VCEsat (BISS) transistor
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = -32 V; IE = 0 A; Tamb = 25 °C
-
-
-100
nA
VCB = -32 V; IE = 0 A; Tj = 150 °C
-
-
-50
µA
ICES
collector-emitter cut-off VCE = -32 V; VBE = 0 V; Tamb = 25 °C
current
-
-
-100
nA
IEBO
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-100
nA
hFE
DC current gain
VCE = -5 V; IC = -1 mA; Tamb = 25 °C
300
-
-
VCE = -5 V; IC = -500 mA; tp ≤ 300 µs;
215
-
-
145
-
-
55
-
-
IC = -100 mA; IB = -1 mA; Tamb = 25 °C
-
-
-140
mV
IC = -500 A; IB = -50 mA; tp ≤ 300 µs;
-
-
-170
mV
-
-
-320
mV
-
-
-650
mV
-
-
320
mΩ
δ ≤ 0.02; Tamb = 25 °C
VCE = -5 V; IC = -1 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
VCE = -5 V; IC = -2 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
VCEsat
collector-emitter
saturation voltage
δ ≤ 0.02; Tamb = 25 °C
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
RCEsat
collector-emitter
saturation resistance
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VBEsat
base-emitter saturation IC = -1 A; IB = -100 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
-1.2
V
VBEon
base-emitter turn-on
voltage
VCE = -5 V; IC = -1 A; pulsed;
-
-
-1.1
V
transition frequency
VCE = -10 V; IC = -50 mA; f = 100 MHz;
150
-
-
MHz
-
-
12
pF
fT
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Tamb = 25 °C
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
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40 V, 2 A PNP low VCEsat (BISS) transistor
006aaa794
800
hFE
IB (mA) = - 24
- 21.6
- 19.2
- 16.8
- 14.4
- 12
IC
(A)
(1)
600
006aaa799
- 2.4
- 1.6
- 9.6
(2)
- 7.2
400
- 4.8
- 0.8
(3)
- 2.4
200
0
-1
- 102
- 10
- 103
IC (mA)
0
- 104
VCE = -5 V
-1
-2
-3
-4
VCE (V)
-5
Tamb = 25 °C
(1) Tamb = 100 °C
Fig. 6.
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 5.
0
Collector current as a function of collectoremitter voltage; typical values
DC current gain as a function of collector
current; typical values
006aaa795
- 1.0
006aaa798
- 1.2
VBEsat
(V)
VBE
(V)
- 0.8
(1)
- 1.0
(2)
- 0.8
(1)
(2)
- 0.6
- 0.6
(3)
- 0.4
- 0.2
- 10- 1
Fig. 7.
(3)
- 0.4
-1
- 10
- 102
- 0.2
- 10- 1
- 103
- 104
IC (mA)
-1
- 10
VCE = -5 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 150 °C
Base-emitter voltage as a function of collector
current; typical values
PBSS5240Z
Product data sheet
Fig. 8.
- 103
- 104
IC (mA)
Base-emitter saturation voltage as a function of
collector current; typical values
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- 102
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NXP Semiconductors
40 V, 2 A PNP low VCEsat (BISS) transistor
006aaa796
-1
aaa-013279
103
RCEsat
(V)
VCEsat
(V)
102
(1)
(2)
(3)
- 10- 1
(1)
10
(2)
(3)
1
- 10- 2
- 10- 1
Fig. 9.
-1
- 10
- 102
10-1
-10-1
- 103
- 104
IC (mA)
-1
-10
IC/IB = 20
IC/IB = 20
(1) Tamb = 100 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = −55 °C
Collector-emitter saturation voltage as a
function of collector current; typical values
-102
-103
-104
IC (mA)
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PBSS5240Z
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40 V, 2 A PNP low VCEsat (BISS) transistor
12. Package outline
Plastic surface-mounted package with increased heatsink; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
e1
3
Lp
bp
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT223
JEITA
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
04-11-10
06-03-16
Fig. 11. Package outline SC-73 (SOT223)
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40 V, 2 A PNP low VCEsat (BISS) transistor
13. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
4
solder resist
3.9
6.1 7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig. 12. Reflow soldering footprint for SC-73 (SOT223)
8.9
6.7
1.9
solder lands
4
solder resist
6.2
1
2
8.7
Dimensions in mm
3
1.9
(3×)
2.7
occupied area
preferred transport
direction during soldering
2.7
1.1
1.9
(2×)
sot223_fw
Fig. 13. Wave soldering footprint for SC-73 (SOT223)
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40 V, 2 A PNP low VCEsat (BISS) transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBSS5240Z v.1
20141015
Product data sheet
-
-
PBSS5240Z
Product data sheet
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PBSS5240Z
NXP Semiconductors
40 V, 2 A PNP low VCEsat (BISS) transistor
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punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PBSS5240Z
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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Semiconductors accepts no liability for any assistance with applications or
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associated with their applications and products.
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
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and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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purchase of NXP Semiconductors products by customer.
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PBSS5240Z
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40 V, 2 A PNP low VCEsat (BISS) transistor
No offer to sell or license — Nothing in this document may be interpreted
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Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
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40 V, 2 A PNP low VCEsat (BISS) transistor
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
11.1
Test information ..................................................... 8
Quality information ............................................... 8
12
Package outline ..................................................... 9
13
Soldering .............................................................. 10
14
Revision history ................................................... 11
15
15.1
15.2
15.3
15.4
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 15 October 2014
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