Photosensor with front-end IC S13645-01CR Compact 16-element APD array suitable for various light level detection The S13645-01CR is a compact optical device that integrates 16-element Si APD array and preamp. It has a built-in DC feedback circuit for reducing the effects of background light. It also provides excellent noise and frequency characteristics. Features Applications High-speed response: 200 MHz Distance measurement Two-level gain switch function (low gain: single output, high gain: defferential output) Option Reduced background light effects Small waveform distortion when excessive light is incident Driver circuit C13666-03 Structure Parameter Detector Photosensitive area (per 1 element) Element pitch Number of elements Package Symbol A - Specification Si APD array 1.0 × 0.4 0.5 16 Plastic Unit mm mm - Absolute maximum ratings Parameter Supply voltage (for preamp) Reverse voltage (for APD) Reverse current (DC) DCFB terminal voltage Gain terminal voltage Channel selection terminal voltage Operating temperature Storage temperature Soldering conditions*2 Symbol Vcc max V_APD IR max Topr Tstg - Condition No dew condensation*1 No dew condensation*1 Value 4.5 0 to VBR 0.2 Vcc + 0.7 Vcc + 0.7 Vcc + 0.7 -20 to +85 -40 to +100 Peak temperature 240 °C max., 2 times (see P.5) Unit V V mA V V V °C °C - *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *2: JEDEC level 5a Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 Photosensor with front-end IC S13645-01CR Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Symbol λ λp S Breakdown voltage Temperature coefficient of breakdown voltage Dark current Temperature coefficient of dark current Terminal capacitance Excess noise figure Gain VBR Condition Min. M=100 λ=900 nm, M=50, low gain λ=900 nm, M=50, high gain ID=100 μA Max. - Typ. 400 to 1150 840 Unit nm nm 35 50 65 700 1000 1300 120 160 200 V - 1.1 - V/°C - kV/W ΔTVBR ID M=50 - 0.4 4 nA ΔTID M=50 - 1.1 - times/°C 40 45 45 120 120 0.65 0.5 0.3 0.4 3.135 - 1.6 0.3 50 65 65 0.01 0.5 200 200 160 240 1.15 1 -0.6 ±0.8 3.3 -25 60 85 85 0.1 5 280 280 220 330 1.65 1.5 ±100 3.465 -20 pF - Ct x M M=50, f=1 MHz M=50, λ=900 nm λ=900 nm Low gain Current consumption Ic High gain Low gain Low cutoff frequency fcl High gain Low gain High cutoff frequency fch High gain f=10 MHz, M=50 Input conversion noise power en f=100 MHz, M=50 Low gain Output voltage level High gain Output offset voltage Voffset High gain Low gain Maximum output voltage Vp-p max amplitude High gain Supply voltage Vcc1, Vcc2 Crosstalk - Spectral response mA MHz MHz fW/Hz1/2 V mV V V dB Dark current vs. reverse voltage (Typ. Ta=25 °C) 30 (Typ. Ta=25 °C) 100 μA 1 μA 20 Dark current Photosensitivity (A/W) 10 μA 100 nA 10 nA 1 nA 10 100 pA 10 pA 0 400 1 pA 600 800 1000 1200 Wavelength (nm) 0 20 40 60 80 100 120 140 160 180 200 Reverse voltage (V) KPICB0199EB KPICB0200EA 2 Photosensor with front-end IC S13645-01CR Terminal capacitance vs. reverse voltage Gain vs. reverse voltage (Typ. Ta=25 °C) 100 pF (Typ. Ta=25 °C) 1000 10 pF Gain Terminal capacitance 100 10 1 pF 1 0.1 100 fF 0 20 40 60 0 80 100 120 140 160 180 200 20 40 60 80 100 120 140 160 180 200 Reverse voltage (V) Reverse voltage (V) KPICB0202EA KPICB0201EA Frequency characteristics (typical example) (Ta=25 °C) 5 0 Relative gain (dB) Low -5 -10 High -15 -20 -25 0.1 1 10 100 1000 Truth table Channel selection D3 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 D2 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 D1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 D0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 Output C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 Gain selection (CN7) Frequency (MHz) KPICB0203EA Gain selection 0 1 Gain Low gain (x 1) High gain (x 20) DCFB_dis selection (CN13) DCFB_dis selection 0 1 Condition ON OFF 3 Photosensor with front-end IC S13645-01CR Block diagram GND-TIA Vdd-TIA GND-VGA Vdd-VGA SW1 Buffer SW2 out1 TIA VGA out2 DCFB Buffer SW3 Gain Dummy amp DC current replica TIA DCFB DCM Select logic DCFB_dis D0 D1 D2 D3 KPICC0287EB 4 Photosensor with front-end IC S13645-01CR Measured example of temperature profile with our hot-air reflow oven for product testing 300 240 °C max. Temperature (°C) 220 180 170 Preheat 70 to 90 s Soldering 40 s max. Time KPICC0288EA ∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 24 hours. ∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. Dimensional outline (unit: mm) 11.4 7.9 0.4 1.0 8.0 0.98 Protect tape 0.7 1.9 Photosnsitive surface 10.8 10 × P0.9=9.0 ⑭ ③ ⑮ 28 × 0.4 ① ⑰ 0.635 7.4 2 × P1.27=2.54 ④ ① ② ③ ④ ⑤ ⑥ ⑦ ⑧ ⑨ ⑩ ⑪ ⑫ ⑬ ⑭ NC DCM GND Vcc1 Vcc2 out2 out1 GND Gain D3 D2 D1 D0 Vcc1 ⑮ ⑯ ⑰ ⑱ ⑲ ⑳ GND DFB_dis NC Anode Anode Anode Anode Anode Anode Anode Anode Anode Anode Anode Tolerance: ±0.2 Protect tape is put on product suface. After soldering, please take off the protect tape. ⑱ KPICA0101EA 5 Photosensor with front-end IC S13645-01CR Recommended land pattern (unit: mm) 12 9.3 0.3 10.2 0.635 9 0.3 0.9 6.9 8.7 KPICC0289EB Enlarged view of photosensitive area (unit: mm) 1.00 2.34 8.94 0.10 0.40 7.90 KPICC0290EA 6 Photosensor with front-end IC S13645-01CR Connection example Vcc1 Connection example Vcc2 L L L: BLM18PG221SN1 10 μF 10 μF 0.1 μF GND-TIA Vdd-TIA 0.1 μF GND-VGA Vdd-VGA SW1 SW2 Buffer Dummy cathode TIA Out1 VGA DCFB Buffer out1 out2 Out2 SW3 200 Ω 200 Ω Gain Gain Dummy amp DC current replica TIA DCFB DCM APD-Anode Select logic D0 D1 D2 D3 0.047 μF/630 V 1 kΩ -HV DCFB_dis 4-bit_logic DCFB_dis KPICC0291EA Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic packages ∙ Surface mount type products Information described in this material is current as of June, 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIC1097E01 Jun. 2016 DN 7