Datasheet

Photosensor with front-end IC
S13645-01CR
Compact 16-element APD array suitable for
various light level detection
The S13645-01CR is a compact optical device that integrates 16-element Si APD array and preamp. It has a built-in DC feedback circuit for reducing the effects of background light. It also provides excellent noise and frequency characteristics.
Features
Applications
High-speed response: 200 MHz
Distance measurement
Two-level gain switch function
(low gain: single output, high gain: defferential output)
Option
Reduced background light effects
Small waveform distortion when excessive light is incident
Driver circuit
C13666-03
Structure
Parameter
Detector
Photosensitive area (per 1 element)
Element pitch
Number of elements
Package
Symbol
A
-
Specification
Si APD array
1.0 × 0.4
0.5
16
Plastic
Unit
mm
mm
-
Absolute maximum ratings
Parameter
Supply voltage (for preamp)
Reverse voltage (for APD)
Reverse current (DC)
DCFB terminal voltage
Gain terminal voltage
Channel selection terminal voltage
Operating temperature
Storage temperature
Soldering conditions*2
Symbol
Vcc max
V_APD
IR max
Topr
Tstg
-
Condition
No dew condensation*1
No dew condensation*1
Value
4.5
0 to VBR
0.2
Vcc + 0.7
Vcc + 0.7
Vcc + 0.7
-20 to +85
-40 to +100
Peak temperature 240 °C max., 2 times (see P.5)
Unit
V
V
mA
V
V
V
°C
°C
-
*1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
*2: JEDEC level 5a
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
www.hamamatsu.com
1
Photosensor with front-end IC
S13645-01CR
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Symbol
λ
λp
S
Breakdown voltage
Temperature coefficient of
breakdown voltage
Dark current
Temperature coefficient of
dark current
Terminal capacitance
Excess noise figure
Gain
VBR
Condition
Min.
M=100
λ=900 nm, M=50,
low gain
λ=900 nm, M=50,
high gain
ID=100 μA
Max.
-
Typ.
400 to 1150
840
Unit
nm
nm
35
50
65
700
1000
1300
120
160
200
V
-
1.1
-
V/°C
-
kV/W
ΔTVBR
ID
M=50
-
0.4
4
nA
ΔTID
M=50
-
1.1
-
times/°C
40
45
45
120
120
0.65
0.5
0.3
0.4
3.135
-
1.6
0.3
50
65
65
0.01
0.5
200
200
160
240
1.15
1
-0.6
±0.8
3.3
-25
60
85
85
0.1
5
280
280
220
330
1.65
1.5
±100
3.465
-20
pF
-
Ct
x
M
M=50, f=1 MHz
M=50, λ=900 nm
λ=900 nm
Low gain
Current consumption
Ic
High gain
Low gain
Low cutoff frequency
fcl
High gain
Low gain
High cutoff frequency
fch
High gain
f=10 MHz, M=50
Input conversion noise power
en
f=100 MHz, M=50
Low gain
Output voltage level
High gain
Output offset voltage
Voffset High gain
Low gain
Maximum output voltage
Vp-p max
amplitude
High gain
Supply voltage
Vcc1, Vcc2
Crosstalk
-
Spectral response
mA
MHz
MHz
fW/Hz1/2
V
mV
V
V
dB
Dark current vs. reverse voltage
(Typ. Ta=25 °C)
30
(Typ. Ta=25 °C)
100 μA
1 μA
20
Dark current
Photosensitivity (A/W)
10 μA
100 nA
10 nA
1 nA
10
100 pA
10 pA
0
400
1 pA
600
800
1000
1200
Wavelength (nm)
0
20
40
60
80 100 120 140 160 180 200
Reverse voltage (V)
KPICB0199EB
KPICB0200EA
2
Photosensor with front-end IC
S13645-01CR
Terminal capacitance vs. reverse voltage
Gain vs. reverse voltage
(Typ. Ta=25 °C)
100 pF
(Typ. Ta=25 °C)
1000
10 pF
Gain
Terminal capacitance
100
10
1 pF
1
0.1
100 fF
0
20
40
60
0
80 100 120 140 160 180 200
20
40
60
80 100 120 140 160 180 200
Reverse voltage (V)
Reverse voltage (V)
KPICB0202EA
KPICB0201EA
Frequency characteristics (typical example)
(Ta=25 °C)
5
0
Relative gain (dB)
Low
-5
-10
High
-15
-20
-25
0.1
1
10
100
1000
Truth table
Channel selection
D3
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
D2
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
D1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
D0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Output
C0
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
C15
Gain selection (CN7)
Frequency (MHz)
KPICB0203EA
Gain selection
0
1
Gain
Low gain (x 1)
High gain (x 20)
DCFB_dis selection (CN13)
DCFB_dis selection
0
1
Condition
ON
OFF
3
Photosensor with front-end IC
S13645-01CR
Block diagram
GND-TIA Vdd-TIA
GND-VGA Vdd-VGA
SW1
Buffer
SW2
out1
TIA
VGA
out2
DCFB
Buffer
SW3
Gain
Dummy
amp
DC current replica
TIA
DCFB
DCM
Select logic
DCFB_dis
D0 D1 D2 D3
KPICC0287EB
4
Photosensor with front-end IC
S13645-01CR
Measured example of temperature profile with our hot-air reflow oven for product testing
300
240 °C max.
Temperature (°C)
220
180
170
Preheat
70 to 90 s
Soldering
40 s max.
Time
KPICC0288EA
∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of
60% or less, and perform soldering within 24 hours.
∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before
actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance.
Dimensional outline (unit: mm)
11.4
7.9
0.4
1.0
8.0
0.98
Protect tape
0.7
1.9
Photosnsitive surface
10.8
10 × P0.9=9.0
⑭
③
⑮
28 × 0.4
①
⑰
0.635
7.4
2 × P1.27=2.54
④
①
②
③
④
⑤
⑥
⑦
⑧
⑨
⑩
⑪
⑫
⑬
⑭
NC
DCM
GND
Vcc1
Vcc2
out2
out1
GND
Gain
D3
D2
D1
D0
Vcc1
⑮
⑯
⑰
⑱
⑲
⑳
GND
DFB_dis
NC
Anode
Anode
Anode
Anode
Anode
Anode
Anode
Anode
Anode
Anode
Anode
Tolerance: ±0.2
Protect tape is put on product suface.
After soldering, please take off the protect tape.
⑱
KPICA0101EA
5
Photosensor with front-end IC
S13645-01CR
Recommended land pattern (unit: mm)
12
9.3
0.3
10.2
0.635
9
0.3
0.9
6.9
8.7
KPICC0289EB
Enlarged view of photosensitive area (unit: mm)
1.00
2.34
8.94
0.10
0.40
7.90
KPICC0290EA
6
Photosensor with front-end IC
S13645-01CR
Connection example
Vcc1
Connection example
Vcc2
L
L
L: BLM18PG221SN1
10 μF
10 μF
0.1 μF
GND-TIA
Vdd-TIA
0.1 μF
GND-VGA
Vdd-VGA
SW1
SW2
Buffer
Dummy cathode
TIA
Out1
VGA
DCFB
Buffer
out1
out2
Out2
SW3
200 Ω 200 Ω
Gain
Gain
Dummy
amp
DC current replica
TIA
DCFB
DCM
APD-Anode
Select logic
D0 D1 D2 D3
0.047 μF/630 V
1 kΩ
-HV
DCFB_dis
4-bit_logic
DCFB_dis
KPICC0291EA
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Metal, ceramic, plastic packages
∙ Surface mount type products
Information described in this material is current as of June, 2016.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KPIC1097E01 Jun. 2016 DN
7
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