Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE (sat) Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 35±5 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.2±0.2 V mJ b 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A IC = 1A, IB = 5mA L = 10mH, single pulse a 0.5±0.15 RL (Ω) 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 7•2.54=17.78±0.25 IB2 (mA) 5 ton (µs) 1.3 tstg (µs) 4.7 tf (µs) 1.2 C1.5±0.5 1 2 C 3 B 4 E 5 E 6 B 7 C 4.0±0.2 VCC (V) 12 (2.54) 1.0±0.25 Typical Switching Characteristics 1.2±0.2 Tj Tstg Symbol 0.5±0.15 PT Electrical Characteristics Unit V V V A A W W ºC ºC 2.3±0.2 Ratings 35±5 35±5 6 3 1 2.5 (Ta=25ºC) 12 (Tc=25ºC) 150 –55 to +150 11.3±0.2 Symbol VCBO VCEO VEBO IC IB 4.7±0.5 Absolute Maximum Ratings (Ta=25ºC) 8 a) Part No. b) Lot No. (Unit: mm) ■ IC — VCE Characteristics (typ.) 15m A 10 m A 3 8m ■ VCE (sat) — IB Temperature Characteristics A 6m A VCE = 4V 4mA 3 2mA IB =1mA 1 2 Ta = 125ºC 75ºC 25ºC –55ºC 0 0.002 3 0.01 0.05 0.1 VCE (V) 20 0 0.5 500 Ta = 125ºC 75ºC 25ºC –55ºC 1 3 tstg ■ VCE = 12V IB1 = – IB2 = 5mA 10 j-a — t Characteristics tf 1 Single pulse 10 5 5 1 0.5 ton 0.3 0.05 0.1 0.5 IC (A) 1 5 0.1 0.1 1 10 Ic (A) ■ Safe Operating Area (single pulse) 100 1000 t (ms) ■ PT — Ta Derating (per element) 1.5 20 0.5 0.5 1.0 VBE (V) (ºC/W) ton • tstg • tf (µS) 1000 10 0 0.4 ■ ton• tstg• t f — IC Characteristics (typ.) (VCE = 4V) 5000 0.05 0.1 Ta = –55ºC 25ºC 75ºC 125ºC IB (A) ■ hFE — IC Temperature Characteristics (typ.) 100 0.01 2 1 j-a 0 0.5 IC (A) IC (A) VCE (sat) (V) 3mA 1 hFE 4 5mA 2 0 ■ IC — VBE Temperature Characteristics (typ.) (IC = 1A) 1 Equivalent Circuit Diagram 15 1m s 10 5 W m ith s (T c= 25 at ) 10 102 ci rc ui op er 50 0 3 at t heat VCE (V) (A ts Withou 5 nk ll 0.5 0.2 7 si 5 ºC 2 2 he PT (W) IC (A) 1 ite 10 0m DC in fin 10 0 sink (A ll circui e) 4 ts oper 50 ate) 100 Ta (ºC) 6 150 5 5000