TSM60N750 A14

TSM60N750
600V, 6A, 0.75Ω
N-Channel Power MOSFET
TO-252
(DPAK)
TO-251
(IPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
Value
Unit
VDS
600
V
RDS(on) (max)
0.75
Ω
Qg
10.8
nC
Block Diagram
Features
●
●
●
●
Super-Junction technology
High performance due to small figure-of-merit
High ruggedness performance
High commutation performance
Application
●
Power Supply.
●
Lighting
Ordering Information
Part No.
Package
Packing
TO-251
75pcs / Tube
TSM60N750CH C5G
N-Channel MOSFET
TSM60N750CP ROG
TO-252
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings (TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
o
TC = 25 C
(Note 2)
o
Total Power Dissipation @ TC=25 C
Limit
IPAK/DPAK
Unit
VDS
600
V
VGS
±30
V
ID
6
A
IDM
18
A
PDTOT
62.5
W
Single Pulsed Avalanche Energy
(Note 3)
EAS
90
mJ
Single Pulsed Avalanche Current
(Note 3)
IAS
1.9
Operating Junction and Storage Temperature Range
TJ, TSTG
1/7
- 55 to +150
A
o
C
Version: A14
TSM60N750
600V, 6A, 0.75Ω
N-Channel Power MOSFET
Thermal Performance
Parameter
Limit
Symbol
Unit
IPAK/DPAK
Junction to Case Thermal Resistance
RӨJC
2
o
Junction to Ambient Thermal Resistance
RӨJA
62
o
C/W
C/W
Electrical Specifications (TJ=25oC unless otherwise noted)
Parameter
Static
Conditions
Symbol
Min
Typ
Max
Unit
(Note 4)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
600
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2
3
4
V
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
1
µA
Drain-Source On-State Resistance
VGS = 10V, ID = 3A
RDS(ON)
--
0.53
0.75
Ω
Qg
--
10.8
--
Qgs
--
2.7
--
Qgd
--
3.7
--
Ciss
--
554
--
Coss
--
46
--
Rg
--
2.7
--
td(on)
--
17.3
--
tr
--
22
--
td(off)
--
28
--
tf
--
22
--
VSD
--
--
1.4
V
trr
--
182
--
ns
Qrr
--
1.3
--
μC
Dynamic
(Note 5)
Total Gate Charge
VDS = 380V, ID = 6A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
VDS = 100V, VGS = 0V,
f = 1.0MHz
Gate Resistance
f=1MHz, open drain
Switching
nC
pF
Ω
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
VDD = 380V,
Turn-Off Delay Time
RGEN = 25Ω,
ID = 6A, VGS = 10V,
Turn-Off Fall Time
Source-Drain Diode
ns
(Note 4)
Forward On Voltage
IS=6A, VGS=0V
Reverse Recovery Time
VR=200V, IS=3A
dIF/dt=100A/μs
Reverse Recovery Charge
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
o
3. L=50mH, IAS=1.9A, VDD=50V, RG=25Ω, Starting TJ=25 C
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
2/7
Version: A14
TSM60N750
600V, 6A, 0.75Ω
N-Channel Power MOSFET
Electrical Characteristics Curves
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Current vs. Voltage
3/7
Version: A14
TSM60N750
600V, 6A, 0.75Ω
N-Channel Power MOSFET
Electrical Characteristics Curves
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (DPAK/IPAK)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK)
10
1
10
0
10
-1
10
-2
10
-3
10
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
-5
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (s)
4/7
Version: A14
TSM60N750
600V, 6A, 0.75Ω
N-Channel Power MOSFET
TO-251 (IPAK) Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/7
Version: A14
TSM60N750
600V, 6A, 0.75Ω
N-Channel Power MOSFET
TO-252 (DPAK) Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
6/7
Version: A14
TSM60N750
600V, 6A, 0.75Ω
N-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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7/7
Version: A14