TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● ● ● ● Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Application ● ● Power Supply. Lighting Ordering Information Part No. Package Packing TSM60N900CI C0G ITO-220 50pcs / Tube TSM60N900CH C5G TO-251 75pcs / Tube N-Channel MOSFET TSM60N900CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25°C (Note 2) Total Power Dissipation @ TC = 25°C Limit ITO-220 IPAK/DPAK Unit VDS 600 V VGS ±30 V ID 4.5 A IDM 13.5 A PDTOT 20 50 W Single Pulsed Avalanche Energy (Note 3) EAS 81 mJ Single Pulsed Avalanche Current (Note 3) IAS 1.8 A TJ, TSTG - 55 to +150 °C Operating Junction and Storage Temperature Range 1/9 Version: B14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET Thermal Performance Parameter Symbol Junction to Case Thermal Resistance RӨJC Junction to Ambient Thermal Resistance RӨJA Limit ITO-220 IPAK/DPAK 6.25 2.5 Unit °C/W 62 °C/W Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Static Conditions Symbol Min Typ Max Unit (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 3 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA Drain-Source On-State Resistance VGS = 10V, ID = 2.3A RDS(ON) -- 0.72 0.9 Ω Qg -- 9.7 -- Qgs -- 2.3 -- Qgd -- 3.6 -- Ciss -- 480 -- Coss -- 36 -- Rg -- 3.4 -- td(on) -- 12 -- tr -- 16 -- td(off) -- 22 -- tf -- 12 -- VSD -- -- 1.4 V trr -- 179 -- ns Qrr -- 1.2 -- μC Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance VDS = 380V, ID = 2.3A, VGS = 10V Output Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Gate Resistance f=1MHz, open drain Switching nC pF Ω (Note 6) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 380V, RGEN = 4.7Ω, ID = 2.3A, VGS = 10V, Turn-Off Fall Time ns Source-Drain Diode (Note 4) Forward On Voltage IS=4.5A, VGS=0V Reverse Recovery Time VR=200V, IS=2.3A dIF/dt=100A/μs Reverse Recovery Charge Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L=50mH, IAS=1.8A, VDD=50V, RG=25Ω, Starting TJ = 25°C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2/9 Version: B14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET Electrical Characteristics Curves Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge vs. Gate-Source Voltage On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage vs. Current 3/9 Version: B14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET Electrical Characteristics Curves Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature Maximum Safe Operating Area (DPAK/IPAK) Maximum Safe Operating Area (ITO-220) 4/9 Version: B14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET Electrical Characteristics Curves Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK) 10 1 10 0 10 -1 10 -2 10 -3 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse -4 10 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0 10 1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220) 10 0 10 -1 10 -2 10 -3 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse -4 10 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 Square Wave Pulse Duration (s) 5/9 Version: B14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 6/9 Version: B14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET TO-251 (IPAK) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 7/9 Version: B14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET TO-252 (DPAK) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/9 Version: B14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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