TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance Application ● Power Supply. ● Lighting Ordering Information Part No. Package Packing TSM60N900CI C0G ITO-220 50pcs / Tube TSM60N900CH C5G TO-251 75pcs / Tube N-Channel MOSFET TSM60N900CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (TA=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) o TC = 25 C (Note 2) o Total Power Dissipation @ TC=25 C Limit ITO-220 IPAK/DPAK VDS 600 V VGS ±30 V ID 4.5 A IDM 13.5 A PDTOT 20 50 Single Pulsed Avalanche Energy (Note 3) EAS 81 Single Pulsed Avalanche Current (Note 3) IAS 1.8 Operating Junction and Storage Temperature Range TJ, TSTG 1/9 Unit - 55 to +150 W mJ A o C Version: A14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET Thermal Performance Parameter Symbol Junction to Case Thermal Resistance RӨJC Junction to Ambient Thermal Resistance Limit ITO-220 IPAK/DPAK 6.25 2.5 RӨJA Unit o C/W o 62 C/W Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Static Conditions Symbol Min Typ Max Unit (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 3 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA Drain-Source On-State Resistance VGS = 10V, ID = 2.3A RDS(ON) -- 0.72 0.9 Ω Qg -- 9.7 -- Qgs -- 2.3 -- Qgd -- 3.6 -- Dynamic (Note 5) Total Gate Charge VDS = 380V, ID = 2.3A, Gate-Source Charge VGS = 10V Gate-Drain Charge nC Input Capacitance VDS = 100V, VGS = 0V, Ciss -- 480 -- Output Capacitance f = 1.0MHz Coss -- 36 -- Gate Resistance f=1MHz, open drain Rg -- 3.4 -- td(on) -- 12 -- tr -- 16 -- td(off) -- 22 -- tf -- 12 -- VSD -- -- 1.4 V Switching pF Ω (Note 6) Turn-On Delay Time VDD = 380V, Turn-On Rise Time RGEN = 4.7Ω, Turn-Off Delay Time ID = 2.3A, VGS = 10V, Turn-Off Fall Time Source-Drain Diode ns (Note 4) Forward On Voltage IS=4.5A, VGS=0V Reverse Recovery Time VR=200V, IS=2.3A trr -- 179 -- ns Reverse Recovery Charge dIF/dt=100A/µs Qrr -- 1.2 -- µC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature o 3. L=50mH, IAS=1.8A, VDD=50V, RG=25Ω, Starting TJ=25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2/9 Version: A14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET Electrical Characteristics Curves Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage 3/9 Version: A14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET Electrical Characteristics Curves Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature Maximum Safe Operating Area (DPAK/IPAK) Maximum Safe Operating Area (ITO-220) 4/9 Version: A14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET Electrical Characteristics Curves Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK) 10 1 100 10-1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10-2 10-3 10-4 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220) 10 0 10-1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10-2 10-3 10-4 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration (s) 5/9 Version: A14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 6/9 Version: A14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET TO-251 (IPAK) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 7/9 Version: A14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET TO-252 (DPAK) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/9 Version: A14 TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9/9 Version: A14