DATASHEET

HS-2600RH
Data Sheet
Radiation Hardened Wideband, High
Impedance Operational Amplifier
HS-2600RH is a radiation hardened internally compensated
bipolar operational amplifier that features very high input
impedance coupled with wideband AC performance. The
high resistance of the input stage is complemented by low
offset voltage (4mVmax at 25oC for HS-2600RH) and low
bias and offset current (10nA max at 25oC for HS-2600RH)
to facilitate accurate signal processing. Offset voltage can be
reduced further by means of an external nulling
potentiometer. The 4V/µs minimum slew rate at 25oC and
the minimum open loop gain of 100kV/V at 25oC enables the
HS-2600RH to perform high gain amplification of fast,
wideband signals. These dynamic characteristics, coupled
with fast settling times, make these amplifiers ideally suited
to pulse amplification designs as well as high frequency or
video applications. The frequency response of the amplifier
can be tailored to exact design requirements by means of an
external bandwidth control capacitor. Other high
performance designs such as high gain, low distortion audio
amplifiers, high-Q and wideband active filters and high
speed comparators, are excellent uses of this part.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95671. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
August 1999
File Number
3650.1
Features
• Electrically Screened to SMD # 5962-95671
• QML Qualified per MIL-PRF-38535 Requirements
• High Input Impedance . . . . . . . . . . . . . . . . . 100MΩ (Min)
500MΩ (Typ)
• High Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . 3V/µs (Min)
7V/µs (Typ)
• Low Input Bias Current . . . . . . . . . . . . . . . . . . 10nA (Max)
1nA (Typ)
• Low Input Offset Current (HS-2600RH) . . . . . . 4mV (Max)
• Wide Unity Gain Bandwidth . . . . . . . . . . . . . .12MHz (Typ)
• Output Short Circuit Protection
• Total Gamma Dose. . . . . . . . . . . . . . . . . . . . . 10kRAD(Si)
Applications
• Video Amplifier
• Pulse Amplifier
• High-Q Active Filters
• High Speed Comparators
• Low Distortion Oscillators
Pinout
HS7-2600RH (CERDIP) GDIP1-T8
OR
HS7B-2600RH (SBDIP) CDIP2-T8
TOP VIEW
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP. RANGE
(oC)
BAL
1
-IN
2
5962D9567101VPA
HS7-2600RH-Q
-55 to 125
+IN
3
5962D9567101VPC
HS7B-2600RH-Q
-55 to 125
V-
4
1
–
+
8
COMP
7
V+
6
OUT
5
BAL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
HS-2600RH
Test Circuit
† INCLUDES STRAY
+VCC
ACOUT
CAPACITANCES
V1
-1/10
0.1
100K
1
2K
1 OPEN
S7
3
2 S3A
S1
DUT
1 S6
1
S5B 1
+
S8
OPEN
100
100
2
S3B
1
OPEN
500K
S5A
1
OPEN 2
100K 2
50K
2
OPEN 2
S2
FOR LOOP STABILITY,
USE MIN VALUE CAPACITOR
TO PREVENT OSCILLATION
BAL 2
ADJ
2
1
100pF†
OPEN
1
1
2K
VAC
0.1
+
2
1
3
- 1
+
S9
OPEN
2
BUFFER
V2
10K
-VEE
1
x2
EOUT
5K
2
1 S4
ALL RESISTORS = ±1% (Ω)
ALL CAPACITORS = ±10% (µF)
50K
NOTE: For Detailed Information, Refer to HS-2600RH Test Technical Brief.
Test Waveforms
SIMPLIFIED TEST CIRCUIT
VAC
+
-
VOUT
2kΩ
100pF
SLEW RATE WAVEFORMS
+5.0V
+5.0V
+5.0V
75%
INPUT
-5.0V
-5.0V
+SL
∆V
∆V
OUTPUT
25%
-5.0V
+5.0V
75%
25%
-5.0V
-SL
∆T
SR =
∆V
∆T
∆T
OVERSHOOT, RISE AND FALL TIME WAVE FORMS
+200mV
0V
VFINAL = +200mV
VPEAK
90%
0V
10%
OUTPUT
INPUT
0V
-200mV
tr,+OS
10%
0V
90%
tf,-OS
tr
NOTE:
tf
Measured on both positive and negative transitions. Capacitance at compensation pin should be minimized.
2
VPEAK
-200mV
HS-2600RH
Burn-In Circuit
HS-2600RH CERDIP
1
8
2
7
R1
+
3
V-
4
V+
C3
6
C1
D1
5
C2
D2
NOTES:
1. R1 = 1MΩ, ±5%, 1/4W (Min)
2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
3. C3 = 0.01µF/Socket (10%)
4. D1 = D2 = IN4002 or Equivalent/Board
5. | (V+) - (V-) | = 30V
Irradiation Circuit
C
1
8
2
7
3
6
4
5
C
R
V2
C
GND
NOTES:
6. V1 = +15V ±10%
7. V2 = -15V ±10%
8. R = 1MΩ ±5%
9. C = 0.1µF ±10%
3
V1
HS-2600RH
Schematic Diagram
COMPENSATION
V+
R1
1K
BAL
R2
4.18K
R3
1.56K
R4
1.56K
C3
16pF
BAL
Q1
R5
600
C4
4pF
C2
9pF
Q39
Q41
Q38
Q4
Q42
Q37
Q5
Q58
Q7
Q11
Q30
Q31
Q29
Q28
Q36
Q35
Q43
Q33
Q32
Q44
Q13
Q12
Q57
Q9
Q10
Q26
Q25
Q55
Q54
Q56
R18
30
Q53
R17
30
OUT
Q17
Q18
Q16
Q59
Q6
+INPUT
Q8
Q60
Q61
Q40
Q2
Q3
R6
30
Q45
Q24
Q27
Q15
Q47
Q46
R7
1.35
R19
2.5K
Q52
R11
4.0K
Q19
Q22
Q21
Q23
RP1
R8
1K
Q48
Q50
Q49
R9
4.5K
Q20
R10
2.0K
C1
16pF
Q51
R12
1.6K
R13
1.6K
R14
2.1K
R15
800
R16
30
V-
-INPUT
4
HS-2600RH
Die Characteristics
DIE DIMENSIONS:
ASSEMBLY RELATED INFORMATION:
69 mils x 56 mils x 19 mils ±1 mils
1750µm x 1420µm x 483µm ±25.4µm
Substrate Potential (Powered Up):
Unbiased
INTERFACE MATERIALS:
ADDITIONAL INFORMATION:
Glassivation:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
Worst Case Current Density:
<2 x 105A/cm2
Transistor Count:
Top Metallization:
140
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
Substrate:
Linear Bipolar DI
Backside Finish:
Silicon
Metallization Mask Layout
+IN
HS-2600RH
-IN
BAL
V-
COMP
V+
BAL
OUT
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
5
Similar pages