DATASHEET

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HFA304
Data Sheet
December 15, 2011
CA-3046
File Number
341.6
General Purpose NPN Transistor Array
Features
The CA3046 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Two of the
transistors are internally connected to form a differentially
connected pair.
• Two Matched Transistors
- VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mV
- IIO Match. . . . . . . . . . . . . . . . . . . . . . . . . . . . .2A (Max)
The transistors of the CA3046 are well suited to a wide
variety of applications in low power systems in the DC
through VHF range. They may be used as discrete
transistors in conventional circuits. However, in addition,
they provide the very significant inherent integrated circuit
advantages of close electrical and thermal matching.
• 5 General Purpose Monolithic Transistors
Ordering Information
Applications
PART NUMBER
(BRAND)
TEMP.
RANGE (oC)
PKG.
NO.
PACKAGE
CA3046
-55 to 125
14 Ld PDIP
E14.3
CA3046M
(3046)
-55 to 125
14 Ld SOIC
M14.15
CA3046M96
(3046)
-55 to 125
• Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz
• Operation From DC to 120MHz
• Wide Operating Current Range
• Full Military Temperature Range
• Three Isolated Transistors and One Differentially
Connected Transistor Pair for Low Power Applications at
Frequencies from DC Through the VHF Range
• Custom Designed Differential Amplifiers
• Temperature Compensated Amplifiers
14 Ld SOIC Tape
and Reel
M14.15
• See Application Note, AN5296 “Application of the CA3018
Integrated-Circuit Transistor Array” for Suggested
Applications
Pinout
CA3046 (PDIP, SOIC)
TOP VIEW
14
1
2
DIFFERENTIAL
PAIR
Q1
Q5
12
3
4
Q2
5
11
Q4
10
9
6
7
13 SUBSTRATE
Q3
1
8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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CA-3046
Absolute Maximum Ratings
Thermal Information
Collector-to-Emitter Voltage (VCEO) . . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage (VCBO) . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage (VCIO, Note 1). . . . . . . . . . . . . . 20V
Emitter-to-Base Voltage (VEBO) . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Thermal Resistance (Typical, Note 2)
JA (oC/W) JC (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . .
180
N/A
SOIC Package . . . . . . . . . . . . . . . . . . .
220
N/A
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected
to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2. JA is measured with the component mounted on an evaluation PC board in free air.
TA = 25oC, characteristics apply for each transistor in CA3046 as specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC = 10A, IE = 0
20
60
-
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0
15
24
-
V
Collector-to-Substrate Breakdown Voltage
V(BR)CIO
IC = 10A, ICI = 0
20
60
-
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE = 10A, IC = 0
5
7
-
V
Collector Cutoff Current (Figure 1)
ICBO
VCB = 10V, IE = 0
-
0.002
40
nA
Collector Cutoff Current (Figure 2)
ICEO
VCE = 10V, IB = 0
-
See Fig. 2
0.5
A
Forward Current Transfer Ratio (Static Beta)
(Note 3) (Figure 3)
hFE
VCE = 3V
IC = 10mA
-
100
-
-
IC = 1mA
40
100
-
-
IC = 10A
-
54
-
-
VCE = 3V, IC = 1mA
-
0.3
2
A
VCE = 3V
IE = 1mA
-
0.715
-
V
IE = 10mA
-
0.800
-
V
Input Offset Current for Matched Pair Q1 and Q2.
|IIO1 - IIO2| (Note 3) (Figure 4)
Base-to-Emitter Voltage (Note 3) (Figure 5)
VBE
Magnitude of Input Offet Voltage for Differential
Pair |VBE1 - VBE2| (Note 3) (Figures 5, 7)
VCE = 3V, IC = 1mA
-
0.45
5
mV
Magnitude of Input Offset Voltage for Isolated
Transistors |VBE3 - VBE4|, |VBE4 - VBE5|,
|VBE5 - VBE3| (Note 3) (Figures 5, 7)
VCE = 3V, IC = 1mA
-
0.45
5
mV
VCE = 3V, IC = 1mA
-
-1.9
-
mV/oC
Temperature Coefficient of Base-to-Emitter
Voltage (Figure 6)
V BE
--------------T
Collector-to-Emitter Saturation Voltage
VCES
IB = 1mA, IC = 10mA
-
0.23
-
V
V IO
---------------T
VCE = 3V, IC = 1mA
-
1.1
-
V/oC
NF
f = 1kHz, VCE = 3V, IC = 100A,
Source Resistance = 1k
-
3.25
-
dB
Forward Current Transfer Ratio (Figure 11)
hFE
f = 1kHz, VCE = 3V, IC = 1mA
-
110
-
-
Short Circuit Input Impedance (Figure 11)
hIE
f = 1kHz, VCE = 3V, IC = 1mA
-
3.5
-
k
Open Circuit Output Impedance (Figure 11)
hOE
f = 1kHz, VCE = 3V, IC = 1mA
-
15.6
-
S
Temperature Coefficient: Magnitude of Input Offset Voltage (Figure 7)
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure (Figure 9)
Low Frequency, Small Signal Equivalent
Circuit Characteristics
2
CA-3046
TA = 25oC, characteristics apply for each transistor in CA3046 as specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
-
-
-
-
hRE
f = 1kHz, VCE = 3V, IC = 1mA
-
1.8 x 10-4
YFE
f = 1kHz, VCE = 3V, IC = 1mA
-
31 - j1.5
Input Admittance (Figure 13)
YIE
f = 1kHz, VCE = 3V, IC = 1mA
-
0.3 + j0.04
-
-
Output Admittance (Figure 14)
YOE
f = 1kHz, VCE = 3V, IC = 1mA
-
0.001 + j0.03
-
-
Reverse Transfer Admittance (Figure 15)
YRE
f = 1kHz, VCE = 3V, IC = 1mA
-
See Fig. 14
-
-
300
550
-
MHz
Open Circuit Reverse Voltage Transfer Ratio
(Figure 11)
Admittance Characteristics
Forward Transfer Admittance (Figure 12)
Gain Bandwidth Product (Figure 16)
VCE = 3V, IC = 3mA
fT
Emitter-to-Base Capacitance
CEB
VEB = 3V, IE = 0
-
0.6
-
pF
Collector-to-Base Capacitance
CCB
VCB = 3V, IC = 0
-
0.58
-
pF
Collector-to-Substrate Capacitance
CCI
VCS = 3V, IC = 0
-
2.8
-
pF
NOTE:
3. Actual forcing current is via the emitter for this test.
Typical Performance Curves
103
IE = 0
10
COLLECTOR CUTOFF CURRENT (nA)
COLLECTOR CUTOFF CURRENT (nA)
102
VCB = 15V
VCB = 10V
VCB = 5V
1
10-1
10-2
10-3
10-4
0
25
50
75
TEMPERATURE (oC)
100
FIGURE 1. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT vs TEMPERATURE FOR EACH TRANSISTOR
120
1.1
90
h FE1
h
h FE2
h FE1
FE2
------------- OR -------------
80
0.9
70
60
50
0.01
0.8
0.1
1.0
10
EMITTER CURRENT (mA)
FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER
RATIO AND BETA RATIO FOR Q1 AND Q2 vs
EMITTER CURRENT
3
INPUT OFFSET CURRENT (A)
1.0
100
BETA RATIO
STATIC FORWARD CURRENT
TRANSFER RATIO (hFE)
110
VCE = 5V
1
10-1
10-2
10
hFE
VCE = 10V
10
0
25
50
75
TEMPERATURE (oC)
100
125
FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF
CURRENT vs TEMPERATURE FOR EACH
TRANSISTOR
VCE = 3V
TA = 25oC
102
10-3
125
IB = 0
VCE = 3V
TA = 25oC
1.0
0.1
0.01
0.01
0.1
1.0
COLLECTOR CURRENT (mA)
FIGURE 4. TYPICAL INPUT OFFSET CURRENT FOR
MATCHED TRANSISTOR PAIR Q1Q2 vs
COLLECTOR CURRENT
10
CA-3046
Typical Performance Curves
VCE = 3V
TA = 25oC
VCE = 3V
0.7
3
VBE
2
0.6
1
0.5
INPUT OFFSET VOLTAGE
0
0.4
0.01
0.1
1.0
BASE-TO-EMITTER VOLTAGE (V)
1.0
INPUT OFFSET VOLTAGE (mV)
BASE-TO-EMITTER VOLTAGE (V)
0.8
(Continued)
0.9
0.8
0.7
IE = 3mA
0.6
IE = 1mA
IE = 0.5mA
0.5
0.4
-75
10
-50
-25
EMITTER CURRENT (mA)
FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE
CHARACTERISTICS AND INPUT OFFSET VOLTAGE FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED TRANSISTORS vs EMITTER CURRENT
4.00
125
20
IE = 10mA
VCE = 3V
RS = 500
TA = 25oC
3.00
NOISE FIGURE (dB)
INPUT OFFSET VOLTAGE (mV)
100
FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE
CHARACTERISTIC vs TEMPERATURE FOR EACH
TRANSISTOR
VCE = 3V
2.00
0.75
IE = 1mA
0.50
IE = 0.1mA
0.25
0
-75
-50
-25
0
25
50
75
TEMPERATURE (oC)
100
f = 1kHz
f = 10kHz
5
25
15
f = 0.1kHz
f = 10kHz
5
0
10
30
VCE = 3V
RS = 1000
TA = 25oC
10
f = 1kHz
0.1
COLLECTOR CURRENT (mA)
1.0
FIGURE 8. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
NOISE FIGURE (dB)
20
f = 0.1kHz
15
0
0.01
125
FIGURE 7. TYPICAL INPUT OFFSET VOLTAGE CHARACTERISTICS FOR DIFFERENTIAL PAIR AND PAIRED
ISOLATED TRANSISTORS vs TEMPERATURE
NOISE FIGURE (dB)
0
25
50
75
TEMPERATURE (oC)
VCE = 3V
RS = 10000
TA = 25oC
20
f = 0.1kHz
15
f = 1kHz
10
f = 10kHz
5
0.01
0.1
COLLECTOR CURRENT (mA)
1
FIGURE 9. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
4
0
0.01
0.1
COLLECTOR CURRENT (mA)
1
FIGURE 10. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT
CA-3046
Typical Performance Curves
VCE = 3V
f = 1kHz
TA = 25oC
hFE = 110
hIE = 3.5k
hRE = 1.88 x 10-4
hOE = 15.6S
hIE
10
hRE
hOE
AT
1mA
hFE
1.0
hRE
hIE
0.1
0.01
0.1
1.0
COLLECTOR CURRENT (mA)
FORWARD TRANSFER CONDUCTANCE (gFE)
OR SUSCEPTANCE (bFE) (mS)
NORMALIZED h PARAMETERS
100
(Continued)
bIE
2
1
gIE
OUTPUT CONDUCTANCE (gOE)
OR SUSCEPTANCE (bOE) (mS)
INPUT CONDUCTANCE (gIE)
OR SUSCEPTANCE (bIE) (mS)
3
10
FREQUENCY (MHz)
100
REVERSE TRANSFER CONDUCTANCE (gRE)
OR SUSCEPTANCE (bRE) (mS)
COMMON EMITTER CIRCUIT, BASE INPUT
TA = 25oC, VCE = 3V, IC = 1mA
gRE IS SMALL AT FREQUENCIES
LESS THAN 500MHz
bRE
-0.5
-1.0
-1.5
-2.0
1
10
FREQUENCY (MHz)
100
FIGURE 15. TYPICAL REVERSE TRANSFER ADMITTANCE vs
FREQUENCY
5
-20
1
0.1
10
FREQUENCY (MHz)
100
COMMON EMITTER CIRCUIT, BASE INPUT
TA = 25oC, VCE = 3V, IC = 1mA
5
4
bOE
3
2
1
1
10
100
FREQUENCY (MHz)
FIGURE 13. TYPICAL INPUT ADMITTANCE vs FREQUENCY
0
bFE
-10
0
0.1
FIGURE 14. TYPICAL OUTPUT ADMITTANCE vs FREQUENCY
GAIN BANDWIDTH PRODUCT (MHz)
1
0
gOE
0
0.1
10
6
COMMON EMITTER CIRCUIT, BASE INPUT
4
gFE
20
FIGURE 12. TYPICAL FORWARD TRANSFER ADMITTANCE vs
FREQUENCY
6
TA = 25oC, VCE = 3V, IC = 1mA
TA = 25oC, VCE = 3V, IC = 1mA
30
10
FIGURE 11. TYPICAL NORMALIZED FORWARD CURRENT
TRANSFER RATIO, SHORT CIRCUIT INPUT
IMPEDANCE, OPEN CIRCUIT OUTPUT IMPEDANCE,
AND OPEN CIRCUIT REVERSE VOLTAGE TRANSFER
RATIO vs COLLECTOR CURRENT
5
COMMON EMITTER CIRCUIT, BASE INPUT
40
VCE = 3V
TA = 25oC
1000
900
800
700
600
500
400
300
200
100
0
1
2
3
4
5 6 7 8 9 10 11
COLLECTOR CURRENT (mA)
12 13 14
FIGURE 16. TYPICAL GAIN BANDWIDTH PRODUCT vs
COLLECTOR CURRENT
CA-3046
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