DUCT TE PRO MENT PART E L O S OB PLACE DED RE 6 N E M M RECO HFA304 Data Sheet December 15, 2011 CA-3046 File Number 341.6 General Purpose NPN Transistor Array Features The CA3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. • Two Matched Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mV - IIO Match. . . . . . . . . . . . . . . . . . . . . . . . . . . . .2A (Max) The transistors of the CA3046 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. However, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. • 5 General Purpose Monolithic Transistors Ordering Information Applications PART NUMBER (BRAND) TEMP. RANGE (oC) PKG. NO. PACKAGE CA3046 -55 to 125 14 Ld PDIP E14.3 CA3046M (3046) -55 to 125 14 Ld SOIC M14.15 CA3046M96 (3046) -55 to 125 • Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz • Operation From DC to 120MHz • Wide Operating Current Range • Full Military Temperature Range • Three Isolated Transistors and One Differentially Connected Transistor Pair for Low Power Applications at Frequencies from DC Through the VHF Range • Custom Designed Differential Amplifiers • Temperature Compensated Amplifiers 14 Ld SOIC Tape and Reel M14.15 • See Application Note, AN5296 “Application of the CA3018 Integrated-Circuit Transistor Array” for Suggested Applications Pinout CA3046 (PDIP, SOIC) TOP VIEW 14 1 2 DIFFERENTIAL PAIR Q1 Q5 12 3 4 Q2 5 11 Q4 10 9 6 7 13 SUBSTRATE Q3 1 8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a trademark of Intersil Americas LLC Copyright Intersil Americas LLC 2001, 2011. All Rights Reserved All other trademarks mentioned are the property of their respective owners. CA-3046 Absolute Maximum Ratings Thermal Information Collector-to-Emitter Voltage (VCEO) . . . . . . . . . . . . . . . . . . . . . 15V Collector-to-Base Voltage (VCBO) . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-to-Substrate Voltage (VCIO, Note 1). . . . . . . . . . . . . . 20V Emitter-to-Base Voltage (VEBO) . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Thermal Resistance (Typical, Note 2) JA (oC/W) JC (oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . 180 N/A SOIC Package . . . . . . . . . . . . . . . . . . . 220 N/A Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. JA is measured with the component mounted on an evaluation PC board in free air. TA = 25oC, characteristics apply for each transistor in CA3046 as specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS DC CHARACTERISTICS Collector-to-Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 20 60 - V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 - V Collector-to-Substrate Breakdown Voltage V(BR)CIO IC = 10A, ICI = 0 20 60 - V Emitter-to-Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 5 7 - V Collector Cutoff Current (Figure 1) ICBO VCB = 10V, IE = 0 - 0.002 40 nA Collector Cutoff Current (Figure 2) ICEO VCE = 10V, IB = 0 - See Fig. 2 0.5 A Forward Current Transfer Ratio (Static Beta) (Note 3) (Figure 3) hFE VCE = 3V IC = 10mA - 100 - - IC = 1mA 40 100 - - IC = 10A - 54 - - VCE = 3V, IC = 1mA - 0.3 2 A VCE = 3V IE = 1mA - 0.715 - V IE = 10mA - 0.800 - V Input Offset Current for Matched Pair Q1 and Q2. |IIO1 - IIO2| (Note 3) (Figure 4) Base-to-Emitter Voltage (Note 3) (Figure 5) VBE Magnitude of Input Offet Voltage for Differential Pair |VBE1 - VBE2| (Note 3) (Figures 5, 7) VCE = 3V, IC = 1mA - 0.45 5 mV Magnitude of Input Offset Voltage for Isolated Transistors |VBE3 - VBE4|, |VBE4 - VBE5|, |VBE5 - VBE3| (Note 3) (Figures 5, 7) VCE = 3V, IC = 1mA - 0.45 5 mV VCE = 3V, IC = 1mA - -1.9 - mV/oC Temperature Coefficient of Base-to-Emitter Voltage (Figure 6) V BE --------------T Collector-to-Emitter Saturation Voltage VCES IB = 1mA, IC = 10mA - 0.23 - V V IO ---------------T VCE = 3V, IC = 1mA - 1.1 - V/oC NF f = 1kHz, VCE = 3V, IC = 100A, Source Resistance = 1k - 3.25 - dB Forward Current Transfer Ratio (Figure 11) hFE f = 1kHz, VCE = 3V, IC = 1mA - 110 - - Short Circuit Input Impedance (Figure 11) hIE f = 1kHz, VCE = 3V, IC = 1mA - 3.5 - k Open Circuit Output Impedance (Figure 11) hOE f = 1kHz, VCE = 3V, IC = 1mA - 15.6 - S Temperature Coefficient: Magnitude of Input Offset Voltage (Figure 7) DYNAMIC CHARACTERISTICS Low Frequency Noise Figure (Figure 9) Low Frequency, Small Signal Equivalent Circuit Characteristics 2 CA-3046 TA = 25oC, characteristics apply for each transistor in CA3046 as specified (Continued) Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS - - - - hRE f = 1kHz, VCE = 3V, IC = 1mA - 1.8 x 10-4 YFE f = 1kHz, VCE = 3V, IC = 1mA - 31 - j1.5 Input Admittance (Figure 13) YIE f = 1kHz, VCE = 3V, IC = 1mA - 0.3 + j0.04 - - Output Admittance (Figure 14) YOE f = 1kHz, VCE = 3V, IC = 1mA - 0.001 + j0.03 - - Reverse Transfer Admittance (Figure 15) YRE f = 1kHz, VCE = 3V, IC = 1mA - See Fig. 14 - - 300 550 - MHz Open Circuit Reverse Voltage Transfer Ratio (Figure 11) Admittance Characteristics Forward Transfer Admittance (Figure 12) Gain Bandwidth Product (Figure 16) VCE = 3V, IC = 3mA fT Emitter-to-Base Capacitance CEB VEB = 3V, IE = 0 - 0.6 - pF Collector-to-Base Capacitance CCB VCB = 3V, IC = 0 - 0.58 - pF Collector-to-Substrate Capacitance CCI VCS = 3V, IC = 0 - 2.8 - pF NOTE: 3. Actual forcing current is via the emitter for this test. Typical Performance Curves 103 IE = 0 10 COLLECTOR CUTOFF CURRENT (nA) COLLECTOR CUTOFF CURRENT (nA) 102 VCB = 15V VCB = 10V VCB = 5V 1 10-1 10-2 10-3 10-4 0 25 50 75 TEMPERATURE (oC) 100 FIGURE 1. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT vs TEMPERATURE FOR EACH TRANSISTOR 120 1.1 90 h FE1 h h FE2 h FE1 FE2 ------------- OR ------------- 80 0.9 70 60 50 0.01 0.8 0.1 1.0 10 EMITTER CURRENT (mA) FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO AND BETA RATIO FOR Q1 AND Q2 vs EMITTER CURRENT 3 INPUT OFFSET CURRENT (A) 1.0 100 BETA RATIO STATIC FORWARD CURRENT TRANSFER RATIO (hFE) 110 VCE = 5V 1 10-1 10-2 10 hFE VCE = 10V 10 0 25 50 75 TEMPERATURE (oC) 100 125 FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF CURRENT vs TEMPERATURE FOR EACH TRANSISTOR VCE = 3V TA = 25oC 102 10-3 125 IB = 0 VCE = 3V TA = 25oC 1.0 0.1 0.01 0.01 0.1 1.0 COLLECTOR CURRENT (mA) FIGURE 4. TYPICAL INPUT OFFSET CURRENT FOR MATCHED TRANSISTOR PAIR Q1Q2 vs COLLECTOR CURRENT 10 CA-3046 Typical Performance Curves VCE = 3V TA = 25oC VCE = 3V 0.7 3 VBE 2 0.6 1 0.5 INPUT OFFSET VOLTAGE 0 0.4 0.01 0.1 1.0 BASE-TO-EMITTER VOLTAGE (V) 1.0 INPUT OFFSET VOLTAGE (mV) BASE-TO-EMITTER VOLTAGE (V) 0.8 (Continued) 0.9 0.8 0.7 IE = 3mA 0.6 IE = 1mA IE = 0.5mA 0.5 0.4 -75 10 -50 -25 EMITTER CURRENT (mA) FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE CHARACTERISTICS AND INPUT OFFSET VOLTAGE FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED TRANSISTORS vs EMITTER CURRENT 4.00 125 20 IE = 10mA VCE = 3V RS = 500 TA = 25oC 3.00 NOISE FIGURE (dB) INPUT OFFSET VOLTAGE (mV) 100 FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE CHARACTERISTIC vs TEMPERATURE FOR EACH TRANSISTOR VCE = 3V 2.00 0.75 IE = 1mA 0.50 IE = 0.1mA 0.25 0 -75 -50 -25 0 25 50 75 TEMPERATURE (oC) 100 f = 1kHz f = 10kHz 5 25 15 f = 0.1kHz f = 10kHz 5 0 10 30 VCE = 3V RS = 1000 TA = 25oC 10 f = 1kHz 0.1 COLLECTOR CURRENT (mA) 1.0 FIGURE 8. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT NOISE FIGURE (dB) 20 f = 0.1kHz 15 0 0.01 125 FIGURE 7. TYPICAL INPUT OFFSET VOLTAGE CHARACTERISTICS FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED TRANSISTORS vs TEMPERATURE NOISE FIGURE (dB) 0 25 50 75 TEMPERATURE (oC) VCE = 3V RS = 10000 TA = 25oC 20 f = 0.1kHz 15 f = 1kHz 10 f = 10kHz 5 0.01 0.1 COLLECTOR CURRENT (mA) 1 FIGURE 9. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT 4 0 0.01 0.1 COLLECTOR CURRENT (mA) 1 FIGURE 10. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT CA-3046 Typical Performance Curves VCE = 3V f = 1kHz TA = 25oC hFE = 110 hIE = 3.5k hRE = 1.88 x 10-4 hOE = 15.6S hIE 10 hRE hOE AT 1mA hFE 1.0 hRE hIE 0.1 0.01 0.1 1.0 COLLECTOR CURRENT (mA) FORWARD TRANSFER CONDUCTANCE (gFE) OR SUSCEPTANCE (bFE) (mS) NORMALIZED h PARAMETERS 100 (Continued) bIE 2 1 gIE OUTPUT CONDUCTANCE (gOE) OR SUSCEPTANCE (bOE) (mS) INPUT CONDUCTANCE (gIE) OR SUSCEPTANCE (bIE) (mS) 3 10 FREQUENCY (MHz) 100 REVERSE TRANSFER CONDUCTANCE (gRE) OR SUSCEPTANCE (bRE) (mS) COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA gRE IS SMALL AT FREQUENCIES LESS THAN 500MHz bRE -0.5 -1.0 -1.5 -2.0 1 10 FREQUENCY (MHz) 100 FIGURE 15. TYPICAL REVERSE TRANSFER ADMITTANCE vs FREQUENCY 5 -20 1 0.1 10 FREQUENCY (MHz) 100 COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA 5 4 bOE 3 2 1 1 10 100 FREQUENCY (MHz) FIGURE 13. TYPICAL INPUT ADMITTANCE vs FREQUENCY 0 bFE -10 0 0.1 FIGURE 14. TYPICAL OUTPUT ADMITTANCE vs FREQUENCY GAIN BANDWIDTH PRODUCT (MHz) 1 0 gOE 0 0.1 10 6 COMMON EMITTER CIRCUIT, BASE INPUT 4 gFE 20 FIGURE 12. TYPICAL FORWARD TRANSFER ADMITTANCE vs FREQUENCY 6 TA = 25oC, VCE = 3V, IC = 1mA TA = 25oC, VCE = 3V, IC = 1mA 30 10 FIGURE 11. TYPICAL NORMALIZED FORWARD CURRENT TRANSFER RATIO, SHORT CIRCUIT INPUT IMPEDANCE, OPEN CIRCUIT OUTPUT IMPEDANCE, AND OPEN CIRCUIT REVERSE VOLTAGE TRANSFER RATIO vs COLLECTOR CURRENT 5 COMMON EMITTER CIRCUIT, BASE INPUT 40 VCE = 3V TA = 25oC 1000 900 800 700 600 500 400 300 200 100 0 1 2 3 4 5 6 7 8 9 10 11 COLLECTOR CURRENT (mA) 12 13 14 FIGURE 16. TYPICAL GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT CA-3046 All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9001 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. 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