BAS70 SERIES_E14.pdf

BAS70 / -04 / -05 / -06
Taiwan Semiconductor
Small Signal Product
225mW SMD Switching Diode
FEATURES
- Low turn-on voltage
- Fast switching
- PN junction guard ring for transient and ESD protection
MECHANICAL DATA
SOT-23
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260oC/10s
- Weight: 0.008grams (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)
PARAMETER
VALUE
UNIT
70
V
VR(RMS)
49
V
(Note 1)
IF
70
mA
@ t ≦ 1.0 s
IFSM
100
mA
Power Dissipation
(Note 1)
PD
200
mW
Thermal Resistance Junction to Ambient Air
(Note 1)
RθJA
625
K/W
TJ
-55 to + 125
°C
TSTG
-55 to + 150
°C
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
VR
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current
Operating Junction Temperature
Storage Temperature Range
PARAMETER
IR = 10 µA
Reverse breakdown voltage
tp=300µs , IF=1.0mA
Forward voltage
tp<300µs , IF=15mA
SYMBOL
MIN
MAX
UNIT
V(BR)
70
-
V
-
410
-
1000
VF
mV
Reverse leakage current
tp<300µs , VR=50V
IR
-
100.00
nA
Junction capacitance
VR = 0 V, f = 1 MHz
CJ
-
2
pF
trr
-
5
ns
Reverse revovery time
IF = IR = 10 mA, IRR = 100 Ω, IRR = 1 mA
Notes: 1. Valid provided that terminals are kept at ambient temperature
2. Test period < 3000 µs
Document Number: DS_S1404012
Version: E14
BAS70 / -04 / -05 / -06
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Fig. 2 Maximum Non-Repetitve Peak Forward
Surge Current Per Leg
200
100
0
0
25
50
75
100
125
Peak Forward Surge Current (mA)
PD - Power Dissipation (mW)
Fig.1 Power Derating Curve
100
8.3 ms single half sine wave
(JEDEC Method)
50
0
1
TA - Ambient Temperature (oC)
10
Fig. 3 Typical Forward Characteristics
Fig. 4 Typical Reverse Characteristics
100
10000
10
TA= -40 °C
TA= 0 °C
TA= 25 °C
TA= 75 °C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IR - Instantaneous Reverse Current (nnA)
Instantaneous Forward Current (mA)
100
Numbers of Cycles at 60 Hz
TA=125 °C
1000
TA=70 °C
100
TA=25 °C
10
TA=0 °C
1
TA= -40 °C
0.1
0
10
20
30
40
VR - Reverse Voltage (V)
VF, Instantaneous Forward Voltage (V)
Fig. 6 Typical Transient Thermal Characteristics
Fig. 5 Typical Total Capacitance VS. Reverse Voltage
Junction Capacitance (pF)
2
1
0
0
5
10
Reverse Voltage (V)
15
20
Transient Thermal Impedance (oC/W)
100
f=1.0MHz
10
1
0.1
0.01
0.1
1
10
100
Pulse Duration (sec)
Document Number: DS_S1404012
Version: E14
BAS70 / -04 / -05 / -06
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
GREEN
PART NO.
MANUFACTURE
PACKING
CODE
CODE
COMPOUND
PACKAGE
PACKING
MARKING
CODE
BAS70
RF
G
SOT-23
3K / 7" Reel
73
BAS70-04
RF
G
SOT-23
3K / 7" Reel
74
BAS70-05
RF
G
SOT-23
3K / 7" Reel
75
BAS70-06
RF
G
SOT-23
3K / 7" Reel
76
(Note)
Note: Manufacture special control, if empty means no special control requirement.
EXAMPLE
GREEN
MANUFACTURE
PREFERRED P/N
PACKING CODE
PART NO.
COMPOUND
DESCRIPTION
CODE
CODE
BAS70 RFG
BAS70
BAS70-B0 RFG
BAS70
BAS70-D0 RFG
BAS70
Document Number: DS_S1404012
RF
G
Green compound
B0
RF
G
Green compound
D0
RF
G
Green compound
Version: E14
BAS70 / -04 / -05 / -06
Taiwan Semiconductor
Small Signal Product
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Unit (inch)
DIM.
Min
Max
Min
Max
A
2.70
3.10
0.106
0.122
B
1.10
1.50
0.043
0.059
C
0.30
0.51
0.012
0.020
D
1.78
2.04
0.070
0.080
E
2.10
2.64
0.083
0.104
F
0.89
1.30
0.035
0.051
G
0.55 REF
0.022 REF
H
0.1 REF
0.004 REF
Unit (mm)
Unit (inch)
Z
Typ.
2.9
Typ.
0.114
X
0.8
0.031
Y
0.9
0.035
C
2.0
0.079
E
1.35
0.053
SUGGEST PAD LAYOUT
DIM.
Pin Configuration
BAS70
Document Number: DS_S1404012
BAS70-04
BAS70-05
BAS70-06
Version: E14
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