MBR2035PT thru MBR20200PT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-247AD (TO-3P) MECHANICAL DATA Case: TO-247AD (TO-3P) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 10 in-lbs maximum Weight: 6.1 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR MBR MBR MBR MBR MBR MBR MBR 2035 2045 2050 2060 2090 PT PT PT PT PT PT PT PT 20100 20150 20200 UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 200 V Maximum RMS voltage VRMS 24 31 35 42 63 70 105 140 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 200 V Maximum average forward rectified current IF(AV) 20 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 20 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge Current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF=10A, TJ=25℃ IF=10A, TJ=125℃ IF=20A, TJ=25℃ IF=20A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ VF IR 1.0 0.5 A - 0.80 0.85 0.95 0.57 0.70 0.75 0.92 0.84 0.95 0.95 1.02 0.72 0.85 0.85 0.98 0.1 15 10 5 V mA Voltage rate of change,(Rated VR) dV/dt 10,000 Typical thermal resistance RθJC 1 TJ - 55 to +150 O C TSTG - 55 to +150 O C Operating junction temperature range Storage temperature range V/μs O C/W Note 1: 2.0μs Pulse Width, f=1.0KHz Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle Document Number: DS_D1309026 Version: G13 MBR2035PT thru MBR20200PT Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 PART NO. QUALIFIED MBR20xxPT (Note 1) GREEN COMPOUND PACKING CODE Prefix "H" CODE C0 PACKAGE PACKING TO-3P 30 / Tube Suffix "G" Note 1: "xx" defines voltage from 35V (MBR2035PT) to 200V (MBR20200PT) EXAMPLE AEC-Q101 GREEN COMPOUND PACKING CODE PREFERRED P/N PART NO. MBR2060PT C0 MBR2060PT C0 MBR2060PT C0G MBR2060PT C0 MBR2060PTHC0 MBR2060PT QUALIFIED H CODE G DESCRIPTION Green compound C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) 25 20 15 10 RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK 5 0 0 50 100 150 PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD CURRENT (A) FIG.1- FORWARD CURRENT DERATING CURVE FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 300 8.3ms Single Half Sine Wave JEDEC Method 250 200 150 100 50 0 1 10 CASE TEMPERATURE (oC) NUMBER OF CYCLES AT 60 Hz FIG. 4- TYPICAL REVERSE CHARACTERISTICS PER LEG 100 100 TJ=125℃ TJ=25℃ 1 Pulse Width=300μs 1% Duty Cycle 0.1 MBR2035PT-2045PT MBR2050PT-2060PT MBR2090PT-20200PT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) Document Number: DS_D1309026 1 1.1 1.2 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 10 100 10 TJ=125℃ 1 TJ=25℃ 0.1 0.01 MBR2035PT-MBR2045PT MBR2050PT-MBR20200PT 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: G13 MBR2035PT thru MBR20200PT Taiwan Semiconductor FIG. 5- TYPICAL JUNCTION CAPACITANCE PER LEG FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 1000 MBR2035PT-MBR2045PT MBR2050PT-MBR20200PT 100 10 1 0.1 0.1 1 10 100 0.01 0.1 REVERSE VOLTAGE (V) 1 10 100 T-PULSE DURATION. (sec) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A 15.90 16.40 0.626 0.646 B 7.90 8.20 0.311 0.323 C 5.70 6.20 0.224 0.244 D 20.80 21.30 0.819 0.839 E 3.50 4.10 0.138 0.161 F 19.70 20.20 0.776 0.795 G - 4.30 - 0.169 H 2.90 3.40 0.114 0.134 I 1.93 2.18 0.076 0.086 J 2.97 3.22 0.117 0.127 K 1.12 1.22 0.044 0.048 L 5.20 5.70 0.205 0.224 M 4.90 5.16 0.193 0.203 N 2.70 3.00 0.106 0.118 O 0.51 0.76 0.020 0.030 MARKING DIAGRAM P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1309026 Version: G13 MBR2035PT thru MBR20200PT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1309026 Version: G13