MBR4035PT SERIES_H13 - Taiwan Semiconductor

MBR4035PT thru MBR40200PT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-247AD (TO-3P)
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 10 in-lbs maximum
Weight: 6.1 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBR
MBR
MBR
MBR
MBR
MBR
MBR
4035
4045
4050
4060
4090
PT
PT
PT
PT
PT
PT
PT
PT
40100 40150 40200
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
90
100
150
200
V
Maximum RMS voltage
VRMS
24
31
35
42
63
70
105
140
V
Maximum DC blocking voltage
VDC
35
45
50
60
90
100
150
200
V
Maximum average forward rectified current
IF(AV)
40
A
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
40
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
330
A
Peak repetitive reverse surge Current (Note 1)
IRRM
Maximum instantaneous forward voltage (Note 2)
IF=20A, TJ=25℃
IF=20A, TJ=125℃
IF=40A, TJ=25℃
IF=40A, TJ=125℃
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=125 ℃
VF
IR
1
2
A
0.75
0.77
0.84
0.90
0.65
0.67
0.74
0.80
0.80
-
-
1.01
0.75
-
-
-
0.5
0.1
1.0
30
20
10
V
mA
Voltage rate of change (Rated VR)
dV/dt
10,000
Typical thermal resistance
RθJC
1.2
TJ
- 55 to + 150
O
C
TSTG
- 55 to + 150
O
C
Operating junction temperature range
Storage temperature range
V/μs
O
C/W
Note 1: 2.0μs Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
Document Number: DS_D1309031
Version: H13
MBR4035PT thru MBR40200PT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
PART NO.
QUALIFIED
MBR40xxPT
(Note 1)
GREEN COMPOUND
PACKING CODE
Prefix "H"
CODE
C0
Suffix "G"
PACKAGE
PACKING
TO-3P
30 / Tube
Note 1: "xx" defines voltage from 35V (MBR4035PT) to 200V (MBR40200PT)
EXAMPLE
AEC-Q101
PREFERRED P/N
PART NO.
MBR4060PT C0
MBR4060PT
C0
MBR4060PT C0G
MBR4060PT
C0
MBR4060PTHC0
MBR4060PT
GREEN COMPOUND
PACKING CODE
QUALIFIED
H
CODE
G
DESCRIPTION
Green compound
C0
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
PEAK FORWARD SURGE CURRENT
(A)
AVERAGE FORWARD CURRENT (A)
FIG.1 FORWARD CURRENT DERATING CURVE
50
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
600
40
8.3ms Single Half Sine Wave
JEDEC Method
500
400
30
300
20
200
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
10
100
0
0
50
100
0
150
1
10
TJ=125℃
TJ=25℃
Pulse Width=300μs
1% Duty Cycle
1
MBR40150PT-40200PT
0.1
MBR4035PT-MBR4045PT
MBR4050PT-MBR4060PT
MBR4090PT-MBR40100PT
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
Document Number: DS_D1309031
1
1.1 1.2
FIG.4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
100
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 3 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
10
100
NUMBER OF CYCLES AT 60 Hz
CASE TEMPERATURE (oC)
10
TJ=125℃
1
TJ=75℃
0.1
TJ=25℃
0.01
MBR4035PT-MBR4045PT
MBR4050PT-MBR40200PT
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version: H13
MBR4035PT thru MBR40200PT
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
100
f=1.0MHz
Vsig=50mVp-p
TRANSIENT THERMAL
IMPEDANCE (℃/W)
JUNCTION CAPACITANCE (pF) A
10000
MBR4035PT-MBR4045PT
MBR4050PT-MBR4060PT
MBR4090PT-MBR40200PT
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
10
1000
1
0.1
100
0.1
1
10
0.01
100
0.1
1
10
100
T-PULSE DURATION (sec)
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
15.90
16.40
0.626
0.646
B
7.90
8.20
0.311
0.323
C
5.70
6.20
0.224
0.244
D
20.80
21.30
0.819
0.839
E
3.50
4.10
0.138
0.161
F
19.70
20.20
0.776
0.795
G
-
4.30
-
0.169
H
2.90
3.40
0.114
0.134
I
1.93
2.18
0.076
0.086
J
2.97
3.22
0.117
0.127
K
1.12
1.22
0.044
0.048
L
5.20
5.70
0.205
0.224
M
4.90
5.16
0.193
0.203
N
2.70
3.00
0.106
0.118
O
0.51
0.76
0.020
0.030
MARKING DIAGRAM
P/N
= Marking Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Document Number: DS_D1309031
Version: H13
MBR4035PT thru MBR40200PT
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1309031
Version: H13