1SS133M Taiwan Semiconductor Small Signal Product 300mW, Hermetically Sealed Glass Switching Diodes FEATURES - Fast switching device (trr < 4.0 ns) - Through-hole mount device type - DO-34 package (JEDEC DO-204) - Hermetically sealed glass - Compression bonded construction - All external surfaces are corrosion resistant and leads are readily solderable - RoHS compliant DO-34 - Solder hot dip Tin (Sn) lead finish - Cathode indicated by polarity band - Marking code: 133 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL VALUE UNIT Power Dissipation PD 300 mW Working Inverse Voltage W IV 90 V Average Rectified Current IO 150 mA Non-Repetitive Peak Forward Current IFM 450 mA IFSURGE 2 TJ TSTG PARAMETER Peak Forward Surge Current Operating Junction Temperature Storage Temperature Range PARAMETER A + 175 o C -65 to +200 o C SYMBOL MIN MAX UNIT 80 -- V Breakdown Voltage IR=500nA BV Forward Voltage IF=100mA VF 1.2 V VR=80V IR 500 nA VR=0, f=1.0MHz Cj -- 4.0 pF (Note 1) trr -- 4.0 ns Reverse Leakage Current Junction Capacitance Reverse Recovery Time Notes: 1. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100Ω, IRR=1mA Document Number: DS_S1403003 Version: C15 1SS133M Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Fig. 1 Forward Characteristics Fig. 2 Reverse Characteristics 100 10000 Reverse Current : IR (nA) Forward Current : IF (mA) TA=100oC 10 TA=125oC TA=75oC TA=25oC TA=-25oC 1 1000 TA=75oC TA=50oC 100 TA=25oC 10 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 20 Forward Voltage : VF (V) 80 100 120 Fig. 4 Reverse Recovery Time Characteristics 5 3.0 VR = 6 V Irr = 1/10 IR f = 1 MHz 2.5 4 Reverse Recovery Time : tr (ns) Capacitance Between Terminals : CT (pF) 60 Reverse Voltage : VR (V) Fig. 3 Capacitance Between Terminals Characteristics 2.0 1.5 1.0 0.5 3 2 1 0 0.0 0 5 10 15 20 25 30 0 4 8 12 16 20 Forward Current : IF (mA) Reverse Voltage : VR (V) Fig. 5 Surge Current Characteristics Fig. 6 Reverse Recovery Time ( trr ) Measurement Circuit 100 Surge Current : ISURGE (A) 40 10 1 0.1 1 10 100 1000 10000 Pulse Width : Tw (ms) Document Number: DS_S1403003 Version: C15 1SS133M Taiwan Semiconductor Small Signal Product ORDER INFORMATION (EXAMPLE) 1SS133M R0G Green compound code Packing code Part no. PACKAGE OUTLINE DIMENSIONS DIM. Document Number: DS_S1403003 Unit(mm) Unit(inch) Min Max Min Max A 0.30 0.55 0.012 0.022 B 2.16 3.04 0.085 0.120 C 25.40 38.10 1.000 1.500 D 1.27 2.00 0.050 0.079 Version: C15 1SS133M Taiwan Semiconductor Small Signal Product Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_S1403003 Version: C15