TSC128D High Voltage NPN Transistor with Diode TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter TO-263 2 (D PAK) PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation ● No Need to Interest an hfe Value Because of Low d Variable Storage-time Spread Even Though Comer Low Base Drive Requirement ● Suitable for Half Bridge Light Ballast Application en ● Structure Silicon Triple Diffused Type ● NPN Silicon Transistor ● Integrated Anti-parallel Collector-Emitter Diode TSC128DCZ C0 TSC128DCM RN TO-220 TO-263 eco Package Packing 50pcs / Tube 800pcs / 13” Reel tR Part No. mm ● Ordering Information de Spirit Product. Parameter No Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Symbol Limit Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage @ VBE=0V VCES 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 4 A Collector Peak Current (tp <5ms) ICM 8 A Base Current IB 2 A Base Peak Current (tp <5ms) IBM 4 A PDTOT 35 Power Total Dissipation @ Tc=25ºC Maximum Operating Junction Temperature TJ Storage Temperature Range TSTG 1/6 W +150 o -55 to +150 o C C Version: B11 TSC128D High Voltage NPN Transistor with Diode Thermal Performance Parameter Symbol TO-220 Thermal Resistance - Junction to Case TO-220 o C/W 1.78 62.5 RӨJA TO-263 Unit 1.78 RӨJC TO-263 Thermal Resistance - Junction to Ambient Limit o C/W 62.5 Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static IC =1mA, IB =0 BVCBO 700 -- -- V Collector-Emitter Breakdown Voltage IC =10mA, IE =0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE =1mA, IC =0 BVEBO -- -- V Collector Cutoff Current VCB =700V, IE =0 Collector Cutoff Current VCE =400V, IB =0 Emitter Cutoff Current VEB =7V, IC =0 d Collector-Base Voltage Base-Emitter Saturation Voltage de -- 100 uA ICEO -- -- 250 uA IEBO -- -- 10 uA VCE(SAT)1 -- 0.25 0.7 en -- IC =1A, IB =0.2A VCE(SAT)2 -- 0.5 1 IC =2.5A, IB =0.5A VCE(SAT)3 -- 1.2 1.5 IC =4A, IB =1A VCE(SAT)4 -- 0.5 -- IC =1A, IB =0.2A VBE(SAT)1 -- -- 1.1 IC =2A, IB =0.5A VBE(SAT)2 -- -- 1.2 10 -- -- 17 -- 27 12 -- 32 eco Collector-Emitter Saturation Voltage ICBO mm IC =0.5A, IB =0.1A VCE =5V, IC =10mA VCE =5V, IC =1A tR DC Current Gain Hfe VCE =5V, IC =2A Turn On Time Storage Time V V IF =2A Vf -- -- 2 V VCC =250V, IC =1A, tON -- 0.2 0.6 uS IB1=IB2=0.2A, tp=25uS tSTG -- 3.0 4.5 uS tf -- 0.2 0.3 uS No Forward Voltage Drop 9 Duty Cycle<1% Fall Time Notes: Pulsed duration =380uS, duty cycle ≤2% 2/6 Version: B11 TSC128D High Voltage NPN Transistor with Diode Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 2. DC Current Gain de d Figure 1. Static Characteristics Figure 4. Power Derating No tR eco mm en Figure 3. Vce(sat) v.s. Vbe(sat) Figure 5. Reverse Bias SOA Figure 6. Safety Operating Area 3/6 Version: B11 TSC128D High Voltage NPN Transistor with Diode TO-220 Mechanical Drawing No tR eco mm en de A B C D E F G H I J K L M N O P d DIM TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 9.31 10.550 0.366 0.415 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 2.22 3.22 0.087 0.127 0.78 0.98 0.030 0.038 2.34 2.65 0.092 0.104 4.69 5.31 0.184 0.209 12.32 13.88 0.485 0.546 8.74 9.26 0.344 0.364 15.07 16.07 0.593 0.632 4.35 4.65 0.171 0.183 1.16 1.40 0.045 0.055 27.39 30.35 1.078 1.194 1.785 2.675 0.070 0.105 1.50 1.75 0.059 0.068 5.75 7.65 0.226 0.301 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 4/6 Version: B11 TSC128D High Voltage NPN Transistor with Diode TO-263 Mechanical Drawing Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code No Marking Diagram tR eco mm en de A B C D E F G H I J d DIM TO-263 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 14.605 15.875 0.575 0.625 0.508 0.991 0.020 0.039 2.420 2.660 0.095 0.105 4.064 4.830 0.160 0.190 1.118 1.400 0.045 0.055 0.450 0.730 0.018 0.029 8.280 8.800 0.325 0.346 1.140 1.400 0.044 0.055 1.480 1.520 0.058 0.060 5/6 Version: B11 TSC128D No tR eco mm en de d High Voltage NPN Transistor with Diode Notice Specifications of the products displayed herein are subject to change without notice. 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