TSC2411 General Purpose NPN Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCEO 40V BVCBO 75V IC 600mA VCE(SAT) Features ● ● Ordering Information Driver Stage of AF Amplifier General Purpose Switching Application Structure ● ● 0.5V @ IC / IB = 380mA / 10mA Part No. Package Packing TSC2411CX RFG SOT-23 3Kpcs / 7” Reel Note: “G” denotes for Halogen Free Epitaxial Planar Type Complementary to TSA1036CX Absolute Maximum Rating (Ta = 25°C unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Power Dissipation PD 225 mW Operating Junction Temperature TJ +150 °C TSTG - 55 to +150 °C Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=20ms, Duty≤50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board. Electrical Specifications (Ta = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 10uA, IE = 0 BVCBO 75 -- -- V Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 BVCEO 40 -- -- V Emitter-Base Breakdown Voltage IE = 10uA, IC = 0 BVEBO 6 -- -- V Collector Cutoff Current VCB = 60V, IE = 0 ICBO -- -- 0.1 uA Emitter Cutoff Current VEB = 3V, IC = 0 IEBO -- -- 0.1 uA Collector-Emitter Saturation Voltage IC / IB = 380mA / 10mA VCE(SAT) 1 -- 0.2 0.5 V Collector-Emitter Saturation Voltage IC / IB = 150mA / 15mA VCE(SAT) 2 -- 0.2 0.4 V Collector-Emitter Saturation Voltage IC / IB = 500mA / 50mA VCE(SAT) 3 -- 0.45 0.75 V Base-Emitter Saturation Voltage IC / IB = 150mA / 15mA VBE(SAT) 1 0.75 -- 0.95 V Base-Emitter Saturation Voltage IC / IB = 500mA / 50mA VBE(SAT) 2 -- -- 1.2 V DC Current Transfer Ratio VCE = 1V, IC = 150mA hFE 82 -- 390 fT 300 -- -- MHz Cob -- 6 -- pF Transition Frequency Output Capacitance Document Number: DS_P0000247 VCE =5V, IC=-20mA, f=100MHz VCB = 5V, f=1MHz 1 Version: B15 TSC2411 General Purpose NPN Transistor Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) vs. Ic Figure 3. VBE(SAT) vs. Ic Figure 4. Cutoff Frequency vs. Ic Figure 5. Power Derating Curve Document Number: DS_P0000247 2 Version: B15 TSC2411 General Purpose NPN Transistor SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J Document Number: DS_P0000247 3 SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º Version: B15 TSC2411 General Purpose NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000247 4 Version: B15