TSC TSC2411CXRF

TSC2411
General Purpose NPN Transistor
SOT-23
PRODUCT SUMMARY
Pin Definition:
1. Base
2. Emitter
3. Collector
BVCEO
40V
BVCBO
75V
IC
600mA
VCE(SAT)
Features
●
●
Ordering Information
Driver Stage of AF Amplifier
General Purpose Switching Application
Part No.
TSC2411CX RF
Structure
●
●
0.5V @ IC / IB = 380mA / 10mA
Package
Packing
SOT-23
3Kpcs / 7” Reel
Epitaxial Planar Type
Complementary to TSA1036CX
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
Collector Power Dissipation
PD
225
mW
Operating Junction Temperature
TJ
+150
o
C
- 55 to +150
o
C
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=20ms, Duty≤50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
TSTG
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
IC = 10uA, IE = 0
BVCBO
75
--
--
V
Collector-Emitter Breakdown Voltage
IC = 10mA, IB = 0
BVCEO
40
--
--
V
Emitter-Base Breakdown Voltage
IE = 10uA, IC = 0
BVEBO
6
--
--
V
Collector Cutoff Current
VCB = 60V, IE = 0
ICBO
--
--
0.1
uA
Emitter Cutoff Current
VEB = 3V, IC = 0
IEBO
--
--
0.1
uA
Collector-Emitter Saturation Voltage
IC / IB = 380mA / 10mA
VCE(SAT) 1
--
0.2
0.5
V
Collector-Emitter Saturation Voltage
IC / IB = 150mA / 15mA
VCE(SAT) 2
--
0.2
0.4
V
Collector-Emitter Saturation Voltage
IC / IB = 500mA / 50mA
VCE(SAT) 3
--
0.45
0.75
V
Base-Emitter Saturation Voltage
IC / IB = 150mA / 15mA
VBE(SAT) 1
0.75
--
0.95
V
Base-Emitter Saturation Voltage
IC / IB = 500mA / 50mA
VBE(SAT) 2
--
--
1.2
V
DC Current Transfer Ratio
VCE = 1V, IC = 150mA
hFE
82
--
390
fT
300
--
--
MHz
Cob
--
6
--
pF
Transition Frequency
Output Capacitance
VCE =5V, IC=-20mA,
f=100MHz
VCB = 5V, f=1MHz
1/4
Version: A09
TSC2411
General Purpose NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. VCE(SAT) v.s. Ic
Figure 3. VBE(SAT) v.s. Ic
Figure 4. Cutoff Frequency vs. Ic
Figure 5. Power Derating Curve
2/4
Version: A09
TSC2411
General Purpose NPN Transistor
SOT-23 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
H
I
J
3/4
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
0.95 BSC
0.037 BSC
1.9 BSC
0.074 BSC
2.60
3.00
0.102
0.118
1.40
1.70
0.055
0.067
2.80
3.10
0.110
0.122
1.00
1.30
0.039
0.051
0.00
0.10
0.000
0.004
0.35
0.50
0.014
0.020
0.10
0.20
0.004
0.008
0.30
0.60
0.012
0.024
5º
10º
5º
10º
Version: A09
TSC2411
General Purpose NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
4/4
Version: A09