TSM2301B Taiwan Semiconductor P-Channel Power MOSFET -20V, -2.8A, 100mΩ KEY PERFORMANCE PARAMETERS Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On- PARAMETER VALUE UNIT VDS -20 V resistance RDS(on) (max) VGS = -4.5V 100 VGS = -2.5V 150 VGS = -1.8V 190 Qg 5.8 mΩ nC Application ● Load Switch ● PA Switch SOT-23 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT VDS -20 V VGS ±8 V VGS = 4.5V. ID -2.8 A VGS = 4.5V. IDM -8 A IS -0.72 A Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) (Note 2) Continuous Source Current (Diode Conduction) Total Power Dissipation TA = 25°C TA = 75°C Operating Junction and Storage Temperature Range PDTOT 0.9 0.57 W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT RӨJA 120 °C/W TL 5 S THERMAL PERFORMANCE PARAMETER Junction to Ambient Thermal Resistance(PCB mounted) Lead Temperature (1/8” from case) Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. Document Number: DS_P0000216 1 Version: B15 TSM2301B Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Drain-Source Breakdown Voltage VGS = 0V, ID = -250uA BVDSS -20 -- -- V Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -0.45 -- -0.95 V Gate Body Leakage VGS = ±8V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = -9.6V, VGS = 0V IDSS -- -- -1.0 µA On-State Drain Current VDS ≥-10V, VGS = -5V ID(ON) -6 -- -- A -- 80 100 -- 110 150 -- 150 190 gfs -- 6.5 -- Qg -- 5.8 -- Qgs -- 0.85 -- Qgd -- 1.7 -- Ciss -- 415 -- Coss -- 223 -- Crss -- 87 -- td(on) -- 13 -- tr -- 36 -- td(off) -- 42 -- tf -- 34 -- VSD -- - 0.8 -1.2 VGS = -4.5V, ID = -2.8A Drain-Source On-State Resistance VGS = -2.5V, ID = -2.0A RDS(ON) VGS = -1.8V, ID = -2.0A Forward Transconductance Dynamic VDS = -5V, ID = -4A mΩ S (Note 4) Total Gate Charge VDS = -6V, ID = -2.8A, Gate-Source Charge VGS = -4.5V Gate-Drain Charge Input Capacitance VDS = -6V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Switching f = 1.0MHz nC pF (Note 5) Turn-On Delay Time VDD = -6V, RL = 6Ω, Turn-On Rise Time ID = -1A, VGEN = -4.5V, Turn-Off Delay Time RG = 6Ω Turn-Off Fall Time Source-Drain Diode ns (Note 3) Forward On Voltage IS = -0.75A, VGS = 0V V Notes: 1. Pulse width limited by the maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 5 sec. 3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature. Document Number: DS_P0000216 2 Version: B15 TSM2301B Taiwan Semiconductor ORDERING INFORMATION PART NO. TSM2301BCX RFG PACKAGE PACKING SOT-23 3,000pcs / 7”Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000216 3 Version: B15 TSM2301B Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics ID, Drain Current (A) ID, Continuous Drain Current (A) Transfer Characteristics VGS, Gate to Source Voltge(V) VDS, Drain to Source Voltge(V) Gate Charge RDS(on), On Resistance (mΩ) -VGS, Gate to Source Voltage (V) On-Resistance vs. Drain Current Qg, Total Gate Charge (nC) ID, Drain Current(A) Source-Drain Diode Forward Voltage IS, Source Current (A) Normalized On Resistance (mΩ) (Normalized) On-Resistance vs. Junction Temperature VSD, Source to Drain Voltge(V) TJ, Junction Temperature (°C) Document Number: DS_P0000216 4 Version: B15 TSM2301B Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Threshold Voltage VGS(th), Variance (V) RDS(on), On Resistance (mΩ) On-Resistance vs. Gate-Source Voltage TJ, Junction Temperature (°C) VGS, Gate to Source Voltge(V) Power (W) Single Pulse Power Time (sec) Normalized Thermal Response (RθJC) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Document Number: DS_P0000216 5 Version: B15 TSM2301B Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOT-23 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM 01 Y M L = Device Code = Year Code = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R S =May T =Jun U =Jul V W =Sep X =Oct Y =Nov Z = Lot Code Document Number: DS_P0000216 6 =Apr =Aug =Dec Version: B15 TSM2301B Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000216 7 Version: B15