TSM2301_B15.pdf

TSM2301
20V P-Channel MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
-20
Features
●
●
ID (A)
130 @ VGS = -4.5V
-2.8
190 @ VGS = -2.5V
-2.0
Block Diagram
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
●
●
Load Switch
PA Switch
P-Channel MOSFET
Ordering Information
Part No.
Package
Packing
TSM2301CX RFG
SOT-23
3Kpcs / 7” Reel
Note: “G” denotes for Halogen Free
Absolute Maximum Rating (Ta = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
ID
-2.8
A
IDM
-8
A
IS
-0.72
A
Continuous Drain Current, VGS @4.5V.
Pulsed Drain Current, VGS @4.5V
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
a,b
Ta = 25°C
PD
Ta = 75°C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
0.9
0.57
W
TJ
+150
°C
TJ, TSTG
- 55 to +150
°C
Symbol
Limit
Unit
TL
5
S
RӨJA
120
°C/W
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
c. Surface Mounted on FR4 Board,
Document Number: DS_P0000258
1
Version: B15
TSM2301
20V P-Channel MOSFET
Electrical Specifications (Ta = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250uA
BVDSS
-20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = -250µA
VGS(TH)
-0.45
--
-0.95
V
Gate Body Leakage
VGS = ±8V, VDS = 0V
IGSS
--
--
±100
nA
VDS = -9.6V, VGS = 0V
IDSS
--
--
-1.0
µA
VDS = -10V, VGS = -5V
ID(ON)
-6
--
--
A
--
85
130
--
122
190
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
RDS(ON)
mΩ
Forward Transconductancea
VDS = -5V, ID = -4A
gfs
--
6.5
--
S
Diode Forward Voltage
IS = -0.75A, VGS = 0V
VSD
--
- 0.8
-1.2
V
Qg
--
5.4
10
Qgs
--
0.8
--
Qgd
--
1.1
--
Ciss
--
447
--
Coss
--
127
--
Crss
--
80
--
td(on)
--
5
25
tr
--
19
60
td(off)
--
95
110
--
65
80
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = -6V, ID = -2.8A,
VGS = -4.5V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -6V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = -6V, RL = 6Ω,
ID = -1A, VGEN = -4.5V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW = 300µS, duty cycle = 2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
Document Number: DS_P0000258
2
nS
Version: B15
TSM2301
20V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: DS_P0000258
3
Version: B15
TSM2301
20V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: DS_P0000258
4
Version: B15
TSM2301
20V P-Channel MOSFET
SOT-23 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
H
I
J
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
0.95 BSC
0.037 BSC
1.9 BSC
0.074 BSC
2.60
3.00
0.102
0.118
1.40
1.70
0.055
0.067
2.80
3.10
0.110
0.122
1.00
1.30
0.039
0.051
0.00
0.10
0.000
0.004
0.35
0.50
0.014
0.020
0.10
0.20
0.004
0.008
0.30
0.60
0.012
0.024
5º
10º
5º
10º
Marking Diagram
01 = Device Code
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code
Document Number: DS_P0000258
5
Version: B15
TSM2301
20V P-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
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any damages resulting from such improper use or sale.
Document Number: DS_P0000258
6
Version: B15