TSM4414_B07.pdf

TSM4414
30V N-Channel MOSFET
SOP-8
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
Pin Definition:
1. Source
2. Source
3. Source
4. Gate
5, 6, 7, 8. Drain
30
Features
High Density Cell Design for Ultra Low On-resistance
Ordering Information
TSM4414CS RL
Package
Packing
SOP-8
2.5Kpcs / 13” Reel
N-Channel MOSFET
e co
Part No.
mm
High-Side DC/DC Conversion
Notebook
5
en
Application
Sever
40 @ VGS = 4.5V
d
●
●
8.5
de
Advance Trench Process Technology
●
26 @ VGS = 10V
Block Diagram
●
●
ID (A)
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
tR
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
No
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
a,b
Symbol
Limit
Unit
VDS
30
V
VGS
±20
V
ID
8.5
A
IDM
40
A
IS
1.0
A
o
Ta = 25 C
PD
o
Ta = 75 C
Operating Junction Temperature
W
2.1
+150
o
C
TJ, TSTG
- 55 to +150
o
C
Symbol
Limit
TJ
Operating Junction and Storage Temperature Range
3.0
Thermal Performance
Parameter
Junction to Case Thermal Resistance
RӨJF
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
Unit
32
o
C/W
50
o
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
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Version: B07
TSM4414
30V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
VGS = 0V, ID = 250uA
BVDSS
30
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1
1.4
3
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
VDS = 24V, VGS = 0V
IDSS
--
--
1.0
µA
VDS ≥ 5V, VGS = 10V
ID(ON)
Drain-Source On-State Resistance
Forward Transconductance
a
a
Diode Forward Voltage
Input Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
--
30
40
A
mΩ
--
S
IS = 1A, VGS = 0V
VSD
--
0.76
1.0
V
Qg
--
13
--
Qgs
--
4.2
--
Qgd
--
3.1
--
Ciss
--
610
--
Coss
--
100
--
Crss
--
77
--
td(on)
--
9.1
--
tr
--
16.5
--
td(off)
--
23
--
--
3.5
--
f = 1.0MHz
e co
Switching
c
26
20
VDS = 15V, VGS = 0V,
Output Capacitance
--
20
--
VGS = 10V
Gate-Drain Charge
--
--
gfs
VDS = 15V, ID = 8.5A,
Gate-Source Charge
30
VDS = 5V, ID = 5A
b
Total Gate Charge
RDS(ON)
VGS = 4.5V, ID = 5A
mm
Dynamic
VGS = 10V, ID = 8.5A
de
On-State Drain Current
a
en
Zero Gate Voltage Drain Current
d
Drain-Source Breakdown Voltage
VDD = 15V, RL = 15Ω,
ID = 1A, VGEN = 10V,
pF
nS
No
tR
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
nC
2/6
Version: B07
TSM4414
30V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Transfer Characteristics
en
de
d
Output Characteristics
Gate Charge
No
tR
e co
mm
On-Resistance vs. Drain Current
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: B07
TSM4414
30V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25ºC, unless otherwise noted)
Threshold Voltage
mm
tR
e co
Single Pulse Power
en
de
d
On-Resistance vs. Gate-Source Voltage
No
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: B07
TSM4414
30V N-Channel MOSFET
SOP-8 Mechanical Drawing
de
tR
e co
mm
en
A
B
C
D
F
G
K
M
P
R
d
DIM
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
4.80
5.00
0.189
0.196
3.80
4.00
0.150
0.157
1.35
1.75
0.054
0.068
0.35
0.49
0.014
0.019
0.40
1.25
0.016
0.049
1.27BSC
0.05BSC
0.10
0.25
0.004
0.009
0º
7º
0º
7º
5.80
6.20
0.229
0.244
0.25
0.50
0.010
0.019
Marking Diagram
No
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
5/6
Version: B07
TSM4414
No
tR
e co
mm
en
de
d
30V N-Channel MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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Version: B07