TSC TSM4416CSRL

TSM4416
Preliminary
30V N-Channel MOSFET
SOP-8
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
Pin Definition:
1. Source
2. Source
3. Source
4. Gate
5, 6, 7, 8. Drain
30
Features
ID (A)
19 @ VGS = 10V
8.5
28 @ VGS = 4.5V
6
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Load Switch
●
PWM Application
Ordering Information
Part No.
Package
Packing
TSM4416CS RL
SOP-8
2.5Kpcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
20
V
ID
8.5
A
IDM
40
A
IS
2.6
A
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
Ta = 25 C
PD
o
Ta = 75 C
Operating Junction Temperature
W
1.6
+150
o
TJ, TSTG
- 55 to +150
o
Symbol
Limit
TJ
Operating Junction and Storage Temperature Range
2.5
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
RӨJF
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
Unit
25
o
50
o
C/W
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
1/4
Version: Preliminary
TSM4416
Preliminary
30V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
30
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1
1.8
3
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
VDS = 24V, VGS = 0V
IDSS
--
--
-1.0
µA
VDS ≥ 5V, VGS = 10V
ID(ON)
40
--
--
A
--
15.5
19
--
23
28
Zero Gate Voltage Drain Current
a
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
a
Diode Forward Voltage
Dynamic
a
VGS = 10V, ID = 8.5A
VGS = 4.5V, ID = 6A
RDS(ON)
mΩ
VDS = 5V, ID = 8.5A
gfs
--
23
--
S
IS = 1A, VGS = 0V
VSD
--
0.71
1.0
V
Qg
--
19
24
Qgs
--
9.36
12
Qgd
--
4.2
--
Ciss
--
1040
--
Coss
--
180
--
Crss
--
110
--
td(on)
--
5.2
--
tr
--
4.4
--
td(off)
--
17.3
--
--
3.3
--
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V, ID = 8.5A,
VGS = 5V
VDS = 15V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 15V, RL = 1.8Ω,
ID = 1A, VGEN = 10V,
RG = 3Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/4
nS
Version: Preliminary
TSM4416
Preliminary
30V N-Channel MOSFET
SOP-8 Mechanical Drawing
DIM
A
B
C
D
F
G
K
M
P
R
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
4.80
5.00
0.189
0.196
3.80
4.00
0.150
0.157
1.35
1.75
0.054
0.068
0.35
0.49
0.014
0.019
0.40
1.25
0.016
0.049
1.27BSC
0.05BSC
0.10
0.25
0.004
0.009
0º
7º
0º
7º
5.80
6.20
0.229
0.244
0.25
0.50
0.010
0.019
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
3/4
Version: Preliminary
Preliminary
TSM4416
30V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
4/4
Version: Preliminary