VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series Datasheet

T40HF..., T70HF..., T85HF..., T110HF... Series
Vishay Semiconductors
Power Rectifier Diodes (T-Modules), 40 A to 110 A
FEATURES
• Electrically isolated base plate
• Types up to 1200 VRRM
• 3500 VRMS isolating voltage
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL E78996 approved
• Compliant to RoHS directive 2002/95/EC
D-55
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
IF(AV)
40 A to 110 A
Type
Modules - Diode, High Voltage
These series of T-modules use standard recovery power
rectifier diodes. The semiconductors are electrically isolated
from the metal base, allowing common heatsink and
compact assembly to be built.
Applications include power supplies, battery charges,
welders, motor controls and general industrial current
rectification.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
T40HF
T70HF
T85HF
T110HF
UNITS
40
70
85
110
A
85
85
85
85
°C
63
110
134
173
A
50 Hz
570
1200
1700
2000
60 Hz
600
1250
1800
2100
50 Hz
1630
7100
14 500
20 500
60 Hz
1500
6450
13 500
18 600
16 300
70 700
148 700
204 300
TC
IF(RMS)
IFSM
I2t
A
I2√t
A2s
A2√s
VRRM
100 to 1200
V
TJ
- 40 to 150
°C
Document Number: 93587
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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1
T40HF..., T70HF..., T85HF..., T110HF... Series
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
10
100
150
20
200
300
40
400
500
60
600
700
T40HF...
T70HF...
T85HF...
T110HF...
80
800
900
100
1000
1100
120
1200
1300
IRRM MAXIMUM
AT TJ = 25 °C
μA
100
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
IF(AV)
TEST CONDITIONS
IF(RMS)
t = 8.3 ms
IFSM
t = 10 ms
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2√t for fusing
I2√t
T110HF UNITS
40
70
85
110
A
85
85
85
85
°C
63
110
134
173
A
No voltage
reapplied
570
1200
1700
2000
600
1250
1800
2100
480
1000
1450
1700
500
1050
1500
1780
1630
7100
14 500
20 500
1500
6450
13 500
18 600
1150
5000
10 500
14 500
1050
4570
9600
13 200
A
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
T85HF
180° conduction, half sine wave
t = 10 ms
Maximum peak, one-cycle
forward, non-repetitive
surge current
T40HF T70HF
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
16 300 70 700 148 700 204 300
Low level value of
threshold voltage
VF(TO)1
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ maximum
0.66
0.76
0.68
0.68
High level value of
threshold voltage
VF(TO)2
(I > π x IF(AV)), TJ maximum
0.84
0.95
0.90
0.86
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ maximum
4.3
2.4
1.76
1.56
High level value of
forward slope resistance
rf2
(I > π x IF(AV)), TJ maximum
3.1
1.7
1.08
1.12
IFM = π x IF(AV), TJ = 25 °C,
tp = 400 μs square pulse
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.30
1.35
1.27
1.35
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2
VFM
A2√s
V
Low level value of
forward slope resistance
Maximum forward voltage drop
A2s
mΩ
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V
Document Number: 93587
Revision: 20-May-10
T40HF..., T70HF..., T85HF..., T110HF... Series
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
Vishay Semiconductors
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
T40HF T70HF T85HF T110HF UNITS
Maximum peak reverse
leakage current
IRRM
TJ = 150 °C
RMS isolation voltage
VISOL
50 Hz, circuit to base, all terminals shorted
TJ = 25 °C, t = 1 s
15
15
20
20
mA
3500
3500
3500
3500
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
and storage temperature range
T40HF T70HF T85HF T110HF
TJ, TStg
- 40 to 150
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface smooth, flat
and greased
to heatsink
Mounting torque,
± 10 %
VALUES
TEST CONDITIONS
1.36
terminals
Approximate weight
0.62
°C
0.47
K/W
0.2
M3.5 mounting screws (1)
Non-lubricated
threads
0.69
UNITS
1.3 ± 10 %
Nm
M5 screw terminals
3 ± 10 %
See dimensions - link at the end of datasheet
54
Case style
g
T-module (D-55)
Note
(1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the
compound
ΔR CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION AT TJ MAXIMUM
RECTANGULAR CONDUCTION AT TJ MAXIMUM
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
T40HF...
0.12
0.14
0.18
0.27
0.46
0.09
0.15
0.20
0.28
0.46
T70HF...
0.09
0.11
0.14
0.20
0.35
0.07
0.11
0.15
0.21
0.35
T85HF...
0.08
0.09
0.12
0.18
0.31
0.06
0.10
0.13
0.19
0.31
T110HF...
0.05
0.07
0.09
0.14
0.23
0.05
0.08
0.10
0.15
0.24
DEVICES
UNITS
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 93587
Revision: 20-May-10
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3
T40HF..., T70HF..., T85HF..., T110HF... Series
T40HF.. Series
R thJC (DC) = 1.36 K/ W
140
130
120
Conduction Angle
110
100
90
30°
60°
80
90°
120°
180°
70
60
0
10
20
30
40
50
150
T40HF.. Series
R thJC (DC) = 1.36 K/ W
140
130
120
Conduc tion Period
110
100
30°
90
60°
90°
80
120°
70
180°
DC
60
0
10
20
30
40
50
60
70
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
45
R th
SA
W
K/
.5
=0
3
W
K/
30
K/
W
1
35
2
W
K/
180°
120°
90°
60°
30°
40
5
1.
K/
W
RMS Limit
25
e lt
-D
5K
/W
R
20
a
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
150
Maximum Allowable Case Temperature (°C)
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
Vishay Semiconductors
7K
/W
Conduc tion Angle 10
K/ W
15
10
T40HF.. Series
TJ= 150°C
5
0
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
70
DC
180°
120°
90°
60°
30°
W
K/
ta
el
-D
40
5
0.
K/
W
2K
/W
=
K/
W
1.
5
SA
50
1
th
60
R
R
Maximum Average Forward Pow er Loss (W)
Fig. 3 - Forward Power Loss Characteristics
3K
/W
30 RMSLimit
Conduc tion Period
20
T40HF.. Series
TJ = 150°C
10
5 K/
W
7 K/
W
10 K/ W
0
0
10
20
30
40
50
60
Average Forward Current (A)
0
70
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
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Document Number: 93587
Revision: 20-May-10
T40HF..., T70HF..., T85HF..., T110HF... Series
At Any Ra ted Loa d Cond ition And With
Rated VRRM App lied Following Surge.
Initial TJ = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
500
450
400
350
300
250
200
T40HF.. Series
150
1
10
100
Vishay Semiconductors
150
T70HF.. Series
R thJC (DC) = 0.69 K/ W
140
130
120
110
Conduction Angle
100
90
30°
60°
90°
80
120°
70
180°
60
0
10
20
30
40
50
60
70
80
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Average Forward Current (A)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Current Ratings Characteristics
600
550
500
450
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T J= 150°C
No Voltage Reapplied
Rated V RRM Reapplied
400
350
300
250
200
150
T40HF.. Series
100
0.01
0.1
1
150
T70HF.. Series
R thJC (DC) = 0.69 K/ W
140
130
120
Conduc tion Period
110
100
30°
90
60°
80
90°
120°
180°
70
DC
60
0
20
40
60
80
100
120
Pulse Train Duration (s)
Average Forward Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Current Ratings Characteristics
90
=
A
hS
R t
0.3
W
K/
1.5
ta
el
-D
K/
W
2K
/W
R
RMS Limit
50
W
K/
60
1K
/W
W
K/
70
5
0.
180°
120°
90°
60°
30°
80
7
0.
Maximum Average Forward Power Loss (W)
Peak Half Sine Wave Forward Current (A)
Maximum Allowable Case Temp erature (°C)
550
Maximum Allowable Case Temperature (°C)
Peak Ha lf Sine Wave Forw ard Current (A)
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
3K
/W
40
30
5 K/
Conduc tion Angle
W
20
T70HF.. Series
TJ= 150°C
10
7 K/ W
0
0
10
20
30
40
50
60
Average Forward Current (A)
70
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - Forward Power Loss Characteristics
Document Number: 93587
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
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5
T40HF..., T70HF..., T85HF..., T110HF... Series
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
120
=
2
0.
W
K/
ta
el
-D
1K
/W
1.5
K/ W
RMS Limit
R
60
SA
80
0.
5K
/W
0. 7
K/
W
W
K/
100
h
Rt
DC
180°
120°
90°
60°
30°
3
0.
Maximum Average Forward Power Loss (W)
Vishay Semiconductors
2K/
W
40
Conduc tion Period
20
T70HF.. Series
TJ = 150°C
3K/ W
5K/ W
0
0
20
40
60
80
100
Average Forward Current (A)
120
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
1100
At Any Ra ted Loa d Cond ition And With
Rated V RRM App lied Following Surge.
Initial TJ= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
900
800
700
600
500
400
T70HF.. Series
300
1
10
100
Maximum Allowa ble Case Temperature (°C)
Peak Half Sine Wave Forward Current (A)
Fig. 10 - Forward Power Loss Characteristics
150
T85HF.. Series
R thJC (DC) = 0.62 K/ W
140
130
Conduc tion Angle
120
110
30°
90°
120°
180°
90
80
0
Number Of Equal Amplitude Half Cycle Current Pulses (N)
1000
900
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150°C
No Voltage Reapplied
Rated V RRM Reapplied
800
700
600
500
400
300
200
0.01
T70HF.. Series
0.1
1
Pulse Train Duration (s)
Fig. 12 - Maximum Non-Repetitive Surge Current
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20
30
40
50
60
70
80
90
Fig. 13 - Current Ratings Characteristics
Maximum Allowable Case Temperature (°C)
Peak Half Sine Wave Forward Current (A)
1100
10
Average Forward Current (A)
Fig. 11 - Maximum Non-Repetitive Surge Current
1200
60°
100
150
T85HF.. Series
R thJC (DC) = 0.62 K/ W
140
130
120
Conduction Period
110
100
30°
90
60°
80
90°
120°
70
180°
DC
60
0
20
40
60
80
100
120
140
Average Forward Current (A)
Fig. 14 - Current Ratings Characteristics
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Document Number: 93587
Revision: 20-May-10
T40HF..., T70HF..., T85HF..., T110HF... Series
100
Vishay Semiconductors
hS
Rt
A
.2
=0
K/
W
W
K/
W
K/
W
K/
1.5
K/
W
a
RMS Limit
e lt
-D
60
3
0.
70
1
W
K/
80
7
0.
180°
120°
90°
60°
30°
90
5
0.
2K
/W
50
R
Maximum Average Forward Power Loss (W)
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
3K
/W
40
30
Conduc tion Angle
20
T85HF.. Series
TJ= 150°C
10
5 K/ W
7 K/ W
0
0
10
20
30
40
50
60
70
0
90
80
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
140
DC
180°
120°
90°
60°
30°
W
K/
-D
ta
el
80
2
0.
0.5
K/
W
0.7
K/
W
=
/W
3K
0.
100
SA
th
120
R
1K
/W
60
R
Maximum Average Forward Power Loss (W)
Fig. 15 - Forward Power Loss Characteristics
1.5K
/W
RMSLimit
2K/ W
Conduc tion Period
40
3K/ W
T85HF.. Series
TJ = 150°C
20
5K/ W
0
0
20
40
60
80
100
120
Average Forward Current (A)
0
140
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
1600
At Any Ra ted Loa d Cond ition And With
Ra ted V RRM App lied Following Surge.
Initial TJ= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1400
1200
1000
800
600
T85HF.. Series
400
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 17 - Maximum Non-Repetitive Surge Current
Document Number: 93587
Revision: 20-May-10
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 16 - Forward Power Loss Characteristics
1800
1600
1400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150°C
No Voltage Reapplied
Rated VRRM Reapplied
1200
1000
800
600
400
0.01
T85HF.. Series
0.1
1
Pulse Train Duration (s)
Fig. 18 - Maximum Non-Repetitive Surge Current
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T40HF..., T70HF..., T85HF..., T110HF... Series
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
T110HF.. Series
R thJC (DC) = 0.47 K/ W
140
130
120
Conduc tion Angle
110
100
90
30°
60°
80
90°
120°
70
180°
60
0
20
40
60
80
100
150
Maximum Allowable Case Temperature (°C)
150
120
T110HF.. Series
R thJC (DC) = 0.47 K/ W
140
130
120
Conduc tion Period
110
100
30°
90
60°
90°
120°
80
70
180°
DC
60
0
20
40
60
80 100 120 140 160 180
Average Forward Current (A)
Average Forward Current (A)
Fig. 19 - Current Ratings Characteristics
Fig. 20 - Current Ratings Characteristics
130
2
0.
W
K/
1K
/W
RMS Limit
ta
el
-D
1. 5
R
80
70
K/
W
=
90
W
K/
100
0.
5K
/W
0.
7
SA
110
3
0.
180°
120°
90°
60°
30°
120
R th
Maximum Average Forward Power Loss (W)
Maximum Allowa ble Case Temperature (°C)
Vishay Semiconductors
K/ W
2K
/W
60
50
Conduc tion Angle
40
30
T110HF.. Series
TJ= 150°C
20
10
0
0
20
40
60
80
100
Average Forward Current (A)
3 K/
W
5 K/ W
120
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
180
DC
180°
120°
90°
60°
30°
160
140
120
R
SA
th
Maximum Average Forward Pow er Loss (W)
Fig. 21 - Forward Power Loss Characteristics
=
0.
3K
/W
0.
5K
/W
0.7
K/
W
100
0.
2
K/
W
-D
el
ta
R
1K
/W
80 RMSLimit
1.5
60
Conduc tion Period
K/ W
2 K/ W
40
3 K/ W
T110HF.. Series
TJ = 150°C
20
5 K/ W
0
0
20
40
60
80 100 120 140 160 180
0
Average Forward Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 22 - Forward Power Loss Characteristics
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Document Number: 93587
Revision: 20-May-10
T40HF..., T70HF..., T85HF..., T110HF... Series
1800
1400
1200
1000
800
600
T110HF.. Series
10
TJ= 25°C
10
TJ= 150°C
T70HF.. Series
0
100
0.5
1
1.5
2
2.5
3
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 23 - Maximum Non-Repetitive Surge Current
Fig. 26 - Forward Voltage Drop Characteristics
2000
10000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150°C
No Voltage Reapplied
Rated VRRM Reapplied
1800
1600
1400
1200
1000
800
600
T110HF.. Series
400
0.01
1000
TJ= 25°C
100
TJ= 150°C
T85HF.. Series
10
0.1
1
0
1
2
3
4
5
Pulse Train Duration (s)
Instantaneous Forward Voltage (V)
Fig. 24 - Maximum Non-Repetitive Surge Current
Fig. 27 - Forward Voltage Drop Characteristics
1000
10000
Instantaneous Forward Current (A)
Instantaneous Forward Current (A)
100
1
400
1
Peak Half Sine Wave Forward Current (A)
Instantaneous Forward Current (A)
1600
Vishay Semiconductors
1000
At Any Ra ted Loa d Cond ition And With
Rated V RRM App lied Following Surge.
Initial TJ= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
100
TJ= 25°C
TJ= 150°C
10
T40HF.. Series
1000
100
TJ= 25°C
TJ= 150°C
T110HF.. Series
10
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Fig. 25 - Forward Voltage Drop Characteristics
Document Number: 93587
Revision: 20-May-10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Instantaneous Forward Voltage (V)
Fig. 28 - Forward Voltage Drop Characteristics
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T40HF..., T70HF..., T85HF..., T110HF... Series
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
Transient Thermal Impedanc e ZthJC (K/ W)
Vishay Semiconductors
10
1
Steady State Value:
RthJC = 1.36 K/ W
RthJC = 0.69 K/ W
RthJC = 0.62 K/ W
RthJC = 0.47 K/ W
(DC Operation)
T40HF.. Series
T70HF.. Series
T85HF.. Series
T110HF.. Series
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 29 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
T
110
HF
120
1
2
3
4
1
-
Module type
2
-
Current rating
3
-
Circuit configuration (see Circuit Configuration table)
4
-
Voltage code x 10 = VRRM
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
Single diode
CIRCUIT
CONFIGURATION CODE
HF
CIRCUIT DRAWING
+
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com
10
www.vishay.com/doc?95313
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 93587
Revision: 20-May-10
Outline Dimensions
Vishay Semiconductors
D-55 T-Module Diode Standard and Fast Recovery
DIMENSIONS in millimeters (inches)
25 ± 1
23.5 (0.93)
3 (0.12)
41 (1.61) MAX.
11
(0.43)
18
(0.71)
+
27 (1.06)
15 (0.59)
3.9 (0.15)
8 (0.31)
-
M5
30 (1.18)
Document Number: 95313
Revision: 01-Jul-08
For technical questions, contact: [email protected]
www.vishay.com
1
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Revision: 02-Oct-12
1
Document Number: 91000