VS-HFA90FA120 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 90 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • Designed and qualified for industrial level • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SOT-227 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY VR 1200 V VF (typical) 2.46 V trr (typical) 35 ns IF(AV) per module at TC 90 A at 63 °C Package SOT-227 The dual diode series configuration (VS-HFA90FA120) is used for output rectification or freewheeling/clamping operation and high voltage application. The semiconductor in the SOT-227 Gen II package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode breakdown voltage SYMBOL TEST CONDITIONS VR MAX. UNITS 1200 V Continuous forward current, per leg IF TC = 83 °C 45 Single pulse forward current, per leg IFSM TJ = 25 °C 400 Maximum power dissipation, per leg PD TC = 83 °C 139 TC = 100 °C 104 Any terminal to case, t = 1 min 2500 V -55 to +150 °C RMS isolation voltage Operating junction and storage temperature range VISOL TJ, TStg A W ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage Reverse leakage current SYMBOL VBR VFM IRM TEST CONDITIONS IR = 100 μA CT TYP. MAX. 1200 - - IF = 25 A - 2.46 3.0 IF = 40 A - 2.68 3.3 IF = 25 A, TJ = 125 °C - 2.22 - - 2.52 - IF = 25 A, TJ = 150 °C - 2.12 2.55 IF = 40 A, TJ = 150 °C - 2.43 2.96 VR = VR rated - 1.5 75 IF = 40 A, TJ = 125 °C TJ = 125 °C, VR = VR rated See fig. 1 See fig. 2 TJ = 150 °C, VR = VR rated Junction capacitance MIN. VR = 1200 V See fig. 3 - 0.5 2 - 2 5 - 30 - UNITS V μA mA pF Revision: 31-May-16 Document Number: 94690 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA90FA120 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current MIN. TYP. MAX. - 35 - TJ = 25 °C - 80 - TJ = 125 °C - 130 - - 6.8 - - 11.5 - TJ = 25 °C - 270 - TJ = 125 °C - 740 - MIN. TYP. MAX. IF = 40 A TJ = 25 °C IRRM Reverse recovery charge TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V dIF/dt = - 200 A/μs TJ = 125 °C Qrr VR = 200 V UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction to case, single leg conducting TEST CONDITIONS RthJC Junction to case, both legs conducting Case to heatsink Flat, greased surface RthCS - 0.48 - 0.24 °C/W - 0.10 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Weight Mounting torque - UNITS Case style SOT-227 1000 10 TJ = 150 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) TJ = 150 °C 100 TJ = 125 °C TJ = 25 °C 10 1 1 TJ = 125 °C 0.1 0.01 0.001 TJ = 25 °C 0.0001 0.5 1 1.5 2 2.5 3 3.5 4 0 200 400 600 800 1000 1200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 31-May-16 Document Number: 94690 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA90FA120 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 1 10 100 1000 10 000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 D = 0.75 D = 0.50 0.1 D = 0.33 D = 0.25 D = 0.20 PDM t1 DC 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 175 300 150 250 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) 125 100 DC 75 Square wave (d = 0.5) 80 % rated VR applied 50 25 0 200 RMS limit 150 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 100 50 DC 0 0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Revision: 31-May-16 Document Number: 94690 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA90FA120 www.vishay.com Vishay Semiconductors 1500 200 IF = 40 A IF = 40 A 1250 125 °C IF = 20 A IF = 20 A 1000 Qrr (nC) trr (ns) 150 VR = 200 V VR = 200 V 100 25 °C 750 125 °C 500 50 250 25 °C 0 0 100 1000 100 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt 30 VR = 200 V IF = 40 A 20 IRR (A) IF = 20 A 10 125 °C 25 °C 0 100 1000 dIF/dt (A/μs) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 10 - Reverse Recovery Parameter Test Circuit Revision: 31-May-16 Document Number: 94690 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA90FA120 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- HF A 90 F A 120 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Process designator (A = electron irradiated) 4 - Average current (90 = 90 A) 5 - Circuit configuration (2 separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (120 = 1200 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 2 separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F Revision: 31-May-16 Document Number: 94690 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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