HFA200FA120P Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 200 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC SOT-227 • Designed and qualified for industrial level DESCRIPTION/APPLICATIONS The dual diode series configuration (HFA200FA120P) is used for output rectification or freewheeling/clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. PRODUCT SUMMARY VR 1200 V VF (typical) 2.7 V trr (typical) 150 ns IF(DC) at TC 100 A at 69 °C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 1200 V Cathode to anode voltage VR Continuous forward current IF TC = 69 °C Single pulse forward current IFSM TJ = 25 °C 900 Maximum repetitive forward current IFRM Rated VR, square wave, 20 kHz, TC = 60 °C 150 Maximum power dissipation PD RMS isolation voltage VISOL Operating junction and storage temperature range 100 A TC = 25 °C 416 TC = 100 °C 166 Any terminal to case, t = 1 minute 2500 V - 55 to + 150 °C TJ, TStg W ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage Reverse leakage current Document Number: 94607 Revision: 22-Jul-10 SYMBOL VBR VFM IRM TEST CONDITIONS MIN. TYP. MAX. 1200 - - IF = 100 A - 2.68 3.6 IF = 200 A - 3.37 4.7 IR = 100 μA UNITS V IF = 100 A, TJ = 150 °C - 2.7 2.9 VR = VR rated - 10 75 μA TJ = 125 °C, VR = VR rated - 2 - mA For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 HFA200FA120P Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 200 A DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr TEST CONDITIONS MIN. TYP. MAX. TJ = 25 °C - 150 - TJ = 125 °C - 237 - - 14 - - 21 - TJ = 25 °C - 1050 - TJ = 125 °C - 2430 - MIN. TYP. MAX. - - 0.3 - - 0.15 - 0.05 - IF = 50 A TJ = 25 °C dIF/dt = - 200 A/μs TJ = 125 °C VR = 200 V UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction to case, single leg conducting Junction to case, both legs conducting Case to heatsink TEST CONDITIONS RthJC RthCS Flat, greased and surface UNITS °C/W Weight - 30 - g Mounting torque - 1.3 - Nm www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94607 Revision: 22-Jul-10 HFA200FA120P HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 200 A 10 150°C 1 Reverse Current - IR (mA) Instantaneous Forward Current - IF (A) 1000 100 10 Tj = 150°C 125°C 0.1 0.01 25°C 0.001 Tj = 125°C Tj = 25°C 0.0001 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 200 4.0 400 600 800 1000 1200 Reverse Voltage - VR (V) Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) 1 D = 0.75 D = 0.5 0.1 D = 0.33 D = 0.25 D = 0.2 0.01 Single Pulse (Thermal Resistance) 0.001 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 3 - Maximum Thermal Impedance ZthJC Characteristics 450 140 120 100 DC 80 60 Square wave (D=0.50) 80% rated Vr applied 40 20 see note (1) Average Power Loss - (Watts) Allowable Case Temperature (°C) 160 180° 120° 90° 60° 30° 400 350 300 250 DC RMS Limit 200 150 100 50 0 0 0 20 40 60 80 100 120 140 Average Forward Current - IF(AV) (A) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Document Number: 94607 Revision: 22-Jul-10 0 20 40 60 80 100 120 140 160 Average Forward Current - IF(AV) (A) Fig. 5 - Forward Power Loss Characteristics For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 HFA200FA120P Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 200 A 4000 300 Vr = 200V Vr = 200V 3500 250 3000 If = 50A, Tj = 125°C 200 Q rr (nC) t rr (ns) If = 50A, Tj = 125°C If = 50A, Tj = 25°C 150 2500 2000 1500 If = 50A, Tj = 25°C 1000 100 500 50 100 0 100 1000 dIF /dt (A/μs) 1000 dIF /dt (A/μs) Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 50 Vr = 200V 40 I rr (A) 30 If = 50A, Tj = 125°C 20 If = 50A, Tj = 25°C 10 0 100 1000 dIF /dt (A/μs) Fig. 8 - Typical Peak Recovery Current vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94607 Revision: 22-Jul-10 HFA200FA120P HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 200 A VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94607 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 HFA200FA120P Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 200 A ORDERING INFORMATION TABLE Device code HF A 200 FA 120 P 1 2 3 4 5 6 1 - HEXFRED® family 2 - Process designator (A = Electron irradiated) 3 - Average current (200 = 200 A) 4 - Package outline (FA = SOT-227) 5 - Voltage rating (120 = 1200 V) 6 - P = Lead (Pb)-free CIRCUIT CONFIGURATION 1 4 2 3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94607 Revision: 22-Jul-10 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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