VS-GB90SA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A FEATURES • • • • • • • • • SOT-227 PRODUCT SUMMARY VCES 1200 V VCE(on) typical at 75 A, 25 °C 3.3 V NPT Generation V IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHz Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS IC DC 90 A at 90 °C Speed 8 kHz to 30 kHz Package SOT-227 Circuit Single Switch no diode • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting on heatsink • Plug-in compatible with other SOT-227 packages • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage SYMBOL TEST CONDITIONS VCES MAX. UNITS 1200 V TC = 25 °C 149 Continuous collector current IC (1) Pulsed collector current ICM 200 Clamped inductive load current ILM 200 Gate to emitter voltage VGE Power dissipation, IGBT Isolation voltage PD VISOL TC = 90 °C 90 A ± 20 TC = 25 °C 862 TC = 90 °C 414 Any terminal to case, t = 1 min 2500 V W V Note (1) Maximum collector current admitted is 100 A, to do exceed the maximum temperature of terminals ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER MIN. TYP. MAX. VGE = 0 V, IC = 250 μA 1200 - - VGE = 15 V, IC = 75 A - 3.3 3.8 VGE = 15 V, IC = 75 A, TJ = 125 °C - 3.6 3.9 VGE = 15 V, IC = 75 A, TJ = 150 °C - 3.7 - VCE = VGE, IC = 250 μA 4 5 6 VCE = VGE, IC = 250 μA, TJ = 125 °C - 3.2 - Temperature coefficient of threshold voltage VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -12 - mV/°C VGE = 0 V, VCE = 1200 V - 7 250 μA Collector to emitter leakage current VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 1.4 10 VGE = 0 V, VCE = 1200 V, TJ = 150 °C - 6.5 20 VGE = ± 20 V - - ± 250 Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) ICES IGES TEST CONDITIONS UNITS V mA nA Revision: 31-May-16 Document Number: 94725 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90SA120U www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc TEST CONDITIONS MIN. TYP. MAX. - 690 - IC = 50 A, VCC = 600 V, VGE = 15 V - 65 - - 250 - Turn-on switching loss Eon - 1.2 - Turn-off switching loss Eoff - 2.1 - Total switching loss Etot - 3.3 - Turn-on delay time td(on) - 250 - - 38 - - 280 - Rise time tr Turn-off delay time IC = 75 A, VCC = 600 V, VGE = 15 V, Rg = 5 L = 500 μH, TJ = 25 °C Energy losses include tail and diode recovery Diode used HFA16PB120 td(off) Fall time tf Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time tr Turn-off delay time IC = 75 A, VCC = 600 V, VGE = 15 V, Rg = 5 L = 500 μH, TJ = 125 °C - 90 - - 1.7 - - 4.08 - - 5.78 - - 245 - - 48 - td(off) - 280 - tf - 140 - Fall time UNITS nC mJ ns mJ ns TJ = 150 °C, IC = 200 A, Rg = 22 Reverse bias safe operating area RBSOA Fullsquare VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V, L = 500 μH THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS °C TJ, TStg -40 - 150 Thermal resistance junction to case RthJC - - 0.145 Thermal resistance case to heatsink RthCS Flat, greased surface - 0.05 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Junction and storage temperature range Weight Mounting torque SOT-227 160 IC - Collector-to-Emitter Current (A) Allowable Case Temperature (°C) Case style 140 120 DC 100 80 60 40 20 0 0 °C/W 20 40 60 80 100 120 140 160 200 VGE = 15 V 150 TJ = 125 °C 100 TJ = 150 °C TJ = 25 °C 50 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 IC - Continuous Collector Current (A) VCE - Collector-to-Emitter Voltage (V) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 2 - Typical Collector to Emitter Current Output Characteristics of IGBT Revision: 31-May-16 Document Number: 94725 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90SA120U Vishay Semiconductors 100 VCE - Collector-to-Emitter Voltage (V) IC - Collector-to-Emitter Current (A) www.vishay.com 90 80 70 60 TJ = 125 °C 50 40 30 TJ = 25 °C 20 10 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 5 4.5 IC = 100 A 4 IC = 75 A 3.5 3 IC = 50 A 2.5 IC = 25 A 2 1.5 1 0 8.5 9.0 20 Fig. 3 - Typical IGBT Transfer Characteristics 80 100 120 140 160 Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 5 100 4.5 TJ = 150 °C 10 1 TJ = 125 °C 0.1 0.01 TJ = 25 °C 0.001 Switching Energy (mJ) ICES - Collector-to-Emitter Current (A) 60 TJ - Junction Temperature (°C) VGE - Gate-to-Emitter Voltage (V) Eoff 4 3.5 3 2.5 2 Eon 1.5 1 0.5 0.0001 0 0 200 400 600 800 1000 1200 10 VCES - Collector-to-Emitter Voltage (V) 20 30 40 50 60 70 80 90 100 IC - Collector Current (A) Fig. 7 - Typical IGBT Energy Losses vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V, Diode used HFA16PB120 Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current 1 6 TJ = 25 °C 5.5 td(off) 5 Switching Time (μs) VGE(th) Threshold Voltage (V) 40 4.5 4 TJ = 125 °C 3.5 3 td(on) tf 0.1 tr 2.5 0.01 2 0.20 0.40 0.60 0.80 1.00 0 20 40 60 80 IC (A) IC - Collector Current (A) Fig. 5 - Typical IGBT Threshold Voltage Fig. 8 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V, Diode used HFA16PB120 Revision: 31-May-16 Document Number: 94725 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90SA120U www.vishay.com Vishay Semiconductors 14 10 000 Energy Losses (mJ) 12 Switching Time (µs) Eon 10 Eoff 8 6 4 td(on) 1000 td(off) tf 100 tr 2 0 10 0 10 20 30 40 50 0 10 20 30 40 50 Rg (Ω) RG (Ω) Fig. 9 - Typical IGBT Energy Loss vs. Rg, TJ = 125 °C, IC = 75 A, L = 500 μH, VCC = 600 V, VGE = 15 V, Diode used HFA16PB120 Fig. 10 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.75 0.50 PDM 0.25 0.01 t1 0.1 0.05 0.02 DC t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (s) Fig. 11 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) 1000 IC (A) 100 10 1 10 100 1000 10 000 VCE (V) Fig. 12 - IGBT Reverse Bias SOA, TJ = 150 °C, VGE = 15 V Revision: 31-May-16 Document Number: 94725 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90SA120U www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max.) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig. 14a - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 14b - Switching Loss Waveforms Test Circuit Revision: 31-May-16 Document Number: 94725 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90SA120U www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G B 90 S A 120 U 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - B = IGBT Generation 5 4 - Current rating (90 = 90 A) 5 - Circuit configuration (S = Single switch without antiparallel diode) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (U = Ultrafast IGBT) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Single switch, no antiparallel diode Lead Assignment 4 3 1 2 S 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 31-May-16 Document Number: 94725 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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