VS-GB90DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package • Very low internal inductance ( 5 nH typical) SOT-227 • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 1200 V IC DC 90 A at 90 °C VCE(on) typical at 75 A, 25 °C 3.3 V Speed 8 kHz to 30 kHz Package SOT-227 Circuit Single switch diode BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting on heatsink • Plug-in compatible with other SOT-227 packages • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage SYMBOL TEST CONDITIONS VCES MAX. UNITS 1200 V TC = 25 °C 149 TC = 90 °C 90 Continuous collector current IC (1) Pulsed collector current ICM 200 Clamped inductive load current ILM 200 Diode continuous forward current Gate to emitter voltage Power dissipation, IGBT Power dissipation, diode Isolation voltage IF TC = 25 °C 76 TC = 90 °C 46 VGE PD PD VISOL ± 20 TC = 25 °C 862 TC = 90 °C 414 TC = 25 °C 357 TC = 90 °C 171 Any terminal to case, t = 1 min 2500 A V W V Note (1) Maximum collector current admitted is 100 A, to do exceed the maximum temperature of terminals Revision: 20-May-16 Document Number: 94722 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90DA120U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage SYMBOL VBR(CES) VCE(on) VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 250 μA 1200 - - VGE = 15 V, IC = 75 A - 3.3 3.8 VGE = 15 V, IC = 75 A, TJ = 125 °C - 3.6 3.9 VGE = 15 V, IC = 75 A, TJ = 150 °C - 3.7 - VCE = VGE, IC = 250 μA 4 5 6 VCE = VGE, IC = 250 μA, TJ = 125 °C - 3.2 - VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -12 - mV/°C μA VGE = 0 V, VCE = 1200 V - 7 250 VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 1.4 10 VGE = 0 V, VCE = 1200 V, TJ = 150 °C - 6.5 20 UNITS V mA VGE = 0 V, IF = 75 A - 3.4 5.0 Forward voltage drop, diode VFM VGE = 0 V, IF = 75 A, TJ = 125 °C - 3.2 5.2 VGE = 0 V, IF = 75 A, TJ = 150 °C - 3.05 - Gate to emitter leakage current IGES VGE = ± 20 V - - ± 250 nA MIN. TYP. MAX. UNITS - 690 - - 65 - V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc - 250 - IC = 50 A, VCC = 600 V, VGE = 15 V Turn-on switching loss Eon - 1.2 - Turn-off switching loss Eoff - 2.1 - Total switching loss Etot - 3.3 - Turn-on delay time td(on) - 250 - - 38 - - 280 - - 90 - - 1.7 - - 4.08 - - 5.78 - - 245 - - 48 - - 280 - - 140 - Rise time Turn-off delay time Fall time tr td(off) Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Turn-off delay time Fall time Reverse bias safe operating area Energy losses include tail and diode recovery Diode used HFA16PB120 tf Turn-on switching loss Rise time IC = 75 A, VCC = 600 V, VGE = 15 V, Rg = 5 L = 500 μH, TJ = 25 °C tr IC = 75 A, VCC = 600 V, VGE = 15 V, Rg = 5 L = 500 μH, TJ = 125 °C td(off) tf RBSOA Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Diode reverse recovery time Diode peak reverse current Irr Diode recovery charge Qrr TJ = 150 °C, IC = 200 A, Rg = 22 VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V, L = 500 μH nC mJ ns mJ ns Fullsquare - 140 - ns - 13 - A Qrr - 860 - nC trr - 210 - ns - 19 - A - 1880 - nC IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C Revision: 20-May-16 Document Number: 94722 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90DA120U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction and storage temperature range MIN. TYP. -40 - TJ, TStg IGBT Junction to case TEST CONDITIONS RthJC Diode Case to heatsink RthCS Flat, greased surface Weight Torque to terminal Mounting torque Torque to heatsink 160 - 150 °C - 0.145 - - 0.35 - 0.05 - - 30 - g - - 1.1 (9.7) Nm (lbf.in) - - 1.3 (11.5) Nm (lbf.in) °C/W 160 140 120 DC 100 80 60 40 20 0 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 0 160 20 40 60 80 100 IC - Continuous Collector Current (A) IF - Continuous Forward Current (A) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 3 - Allowable Forward Current vs. Case Temperature Diode Leg 160 200 VGE = 15 V IF - Forward Current (A) IC - Collector-to-Emitter Current (A) UNITS SOT-227 Allowable Case Temperature (°C) Allowable Case Temperature (°C) Case style MAX. 150 TJ = 125 °C 100 TJ = 150 °C TJ = 25 °C 50 120 TJ = 150 °C 80 TJ = 125 °C TJ = 25 °C 40 0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0.0 1.0 2.0 3.0 4.0 5.0 VCE - Collector-to-Emitter Voltage (V) VFM - Forward Voltage Drop (V) Fig. 2 - Typical Collector to Emitter Current Output Characteristics of IGBT Fig. 4 - Typical Diode Forward Voltage Drop Characteristics Revision: 20-May-16 Document Number: 94722 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90DA120U Vishay Semiconductors 100 VCE - Collector-to-Emitter Voltage (V) IC - Collector-to-Emitter Current (A) www.vishay.com 90 80 70 60 TJ = 125 °C 50 40 30 TJ = 25 °C 20 10 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 5 4.5 IC = 100 A 4 IC = 75 A 3.5 3 IC = 50 A 2.5 IC = 25 A 2 1.5 1 0 8.5 9.0 20 Fig. 5 - Typical IGBT Transfer Characteristics 80 100 120 140 160 Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 5 100 4.5 TJ = 150 °C 10 1 TJ = 125 °C 0.1 0.01 TJ = 25 °C 0.001 Switching Energy (mJ) ICES - Collector-to-Emitter Current (A) 60 TJ - Junction Temperature (°C) VGE - Gate-to-Emitter Voltage (V) Eoff 4 3.5 3 2.5 2 Eon 1.5 1 0.5 0.0001 0 0 200 400 600 800 1000 1200 10 VCES - Collector-to-Emitter Voltage (V) 20 30 40 50 60 70 80 90 100 IC - Collector Current (A) Fig. 9 - Typical IGBT Energy Losses vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V, Diode used HFA16PB120 Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current 1 6 TJ = 25 °C 5.5 td(off) 5 Switching Time (μs) VGE(th) Threshold Voltage (V) 40 4.5 4 TJ = 125 °C 3.5 3 td(on) tf 0.1 tr 2.5 0.01 2 0.20 0.40 0.60 0.80 1.00 0 20 40 60 80 IC (A) IC - Collector Current (A) Fig. 7 - Typical IGBT Threshold Voltage Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V, Diode used HFA16PB120 Revision: 20-May-16 Document Number: 94722 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90DA120U www.vishay.com Vishay Semiconductors 14 3000 VR = 200 V IF = 50 A Eon 12 Qrr (nC) Energy Losses (mJ) 2500 10 Eoff 8 6 2000 125 °C 1500 4 25 °C 1000 2 0 500 0 10 20 30 40 50 100 Rg (Ω) dIF/dt (A/μs) Fig. 11 - Typical IGBT Energy Loss vs. Rg, TJ = 125 °C, IC = 75 A, L = 500 μH, VCC = 600 V, VGE = 15 V, Diode used HFA16PB120 Fig. 14 - Stored Charge vs. dIF/dt of Diode 40 10 000 35 td(on) 1000 VR = 200 V IF = 50 A 30 td(off) IRR (A) Switching Time (µs) 1000 tf 25 125 °C 20 100 15 tr 25 °C 10 10 5 0 10 20 30 40 50 RG (Ω) 100 1000 dIF/dt (A/μs) Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V Fig. 15 - Typical Reverse Recovery Current vs. dIF/dt of Diode 300 VR = 200 V IF = 50 A trr (ns) 250 125 °C 200 150 25 °C 100 50 100 1000 dIF/dt (A/μs) Fig. 13 - Typical trr Diode vs. dIF/dt VRR = 200 V, IF = 50 A Revision: 20-May-16 Document Number: 94722 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90DA120U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.75 0.50 PDM 0.25 0.01 t1 0.1 0.05 0.02 DC 0.001 0.0001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.75 0.50 0.1 0.25 PDM 0.1 0.05 0.01 t1 0.02 t2 DC Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode) 1000 IC (A) 100 10 1 10 100 1000 10 000 VCE (V) Fig. 18 - IGBT Reverse Bias SOA, TJ = 150 °C, VGE = 15 V, Revision: 20-May-16 Document Number: 94722 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90DA120U www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max.) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 19a - Clamped Inductive Load Test Circuit Fig. 19b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig. 20a - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 20b - Switching Loss Waveforms Test Circuit Revision: 20-May-16 Document Number: 94722 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90DA120U www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G B 90 D A 120 U 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - B = IGBT Generation 5 4 - Current rating (90 = 90 A) 5 - Circuit configuration (D = Single switch with antiparallel diode) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (U = Ultrafast IGBT) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Single switch with antiparallel diode Lead Assignment 4 3 1 2 D 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 20-May-16 Document Number: 94722 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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