SQ4005EY Datasheet

SQ4005EY
www.vishay.com
Vishay Siliconix
Automotive P-Channel 12 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
-12
RDS(on) (Ω) at VGS = -4.5 V
0.016
RDS(on) (Ω) at VGS = -2.5 V
0.022
ID (A)
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
-15
Configuration
Single
Package
SO-8
S
SO-8 Single
D
8
D
7
D
6
D
5
G
Top View
1
S
2
S
3
S
4
G
P-Channel MOSFET
D
Marking Code: Q4005
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-12
Gate-Source Voltage
VGS
±8
Continuous Drain Current a
TC = 25 °C
ID
TC = 125 °C
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current
IS
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
L = 0.1 mH
TC = 25 °C
Operating Junction and Storage Temperature Range
-15
-5.4
-60
IAS
-20
EAS
20
TJ, Tstg
Soldering Recommendations (Peak Temperature)
V
-8.7
IDM
PD
TC = 125 °C
UNIT
6
2
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mount
c
SYMBOL
LIMIT
RthJA
92
RthJF
25
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing
S15-2473-Rev. A, 19-Oct-15
Document Number: 64454
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4005EY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0, ID = -250 μA
-12
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-0.45
-0.6
-1
IGSS
VDS = 0 V, VGS = ± 8 V
-
-
± 100
-1
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward
Transconductance b
Dynamic
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V
VDS = -12 V
-
-
VGS = 0 V
VDS = -12 V, TJ = 125 °C
-
-
-50
VGS = 0 V
VDS = -12 V, TJ = 175 °C
-
-
-150
VGS = -4.5 V
VDS ≤ -5 V
-20
-
-
VGS = -4.5 V
ID = -13.5 A
-
0.013
0.016
VGS = -4.5 V
ID = -13.5 A
-
-
0.020
VGS = -4.5 V
ID = -13.5 A
-
-
0.022
VGS = -2.5 V
ID = -12 A
-
0.018
0.022
-
34
-
-
2433
3600
VDS = -6 V, ID = -12 A
V
nA
μA
A
Ω
S
b
Input Capacitance
Ciss
Output Capacitance
Coss
-
922
1380
Reverse Transfer Capacitance
Crss
-
752
1120
Total Gate Charge c
Qg
-
29
38
-
4.2
-
-
8.4
-
f = 1 MHz
1.3
2.7
4
td(on)
-
19
26
tr
VDD = -6 V, RL = 0.6 Ω
ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω
-
33
44
-
73
97
-
30
40
Gate-Source
Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay
Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
td(off)
VGS = 0 V
VGS = -4.5 V
VDS = -6 V, f = 1 MHz
VDS = -6 V, ID = -10 A
tf
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = -10 A, VGS = 0 V
-
-
-60
A
-
-0.8
-1.1
V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2473-Rev. A, 19-Oct-15
Document Number: 64454
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4005EY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
30
30
VGS = 5 V thru 2 V
24
ID - Drain Current (A)
ID - Drain Current (A)
24
18
VGS = 1.5 V
12
18
TC = 25 °C
12
6 T = 125 °C
C
6
TC = - 55 °C
VGS = 1 V
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
1
Output Characteristics
2
3
4
VGS - Gate-to-Source Voltage (V)
5
Transfer Characteristics
5
50
4
40
gfs - Transconductance (S)
ID - Drain Current (A)
TC = - 55 °C
3
TC = 25 °C
2
1
TC = 25 °C
30
TC = 125 °C
20
10
TC = 125 °C
TC = - 55 °C
0
0
0
1.5
1
2.5
2
VGS - Gate-to-Source Voltage (V)
0
3
0.04
4000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
5000
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
0.01
9
12
15
Transconductance
0.05
0.02
6
ID - Drain Current (A)
Transfer Characteristics
0.03
3
3000
Ciss
2000
Coss
1000
Crss
0
0.00
0
6
12
18
ID - Drain Current (A)
24
On-Resistance vs. Drain Current
S15-2473-Rev. A, 19-Oct-15
30
0
3
6
9
VDS - Drain-to-Source Voltage (V)
12
Capacitance
Document Number: 64454
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4005EY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.5
5
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 10 A
4
3
2
1
10
20
VGS = 2.5 V
1.1
0.9
VGS = 4.5 V
0.7
0.5
- 50 - 25
0
0
ID = 13 A
1.3
30
0
Qg - Total Gate Charge (nC)
Gate Charge
75
100
125
150
175
0.05
TJ = 150 °C
0.04
RDS(on) - On-Resistance (Ω)
10
IS - Source Current (A)
50
On-Resistance vs. Junction Temperature
100
1
TJ = 25 °C
0.1
0.01
0.001
0.03
TJ = 150 °C
0.02
TJ = 25 °C
0.01
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
VSD - Source-to-Drain Voltage (V)
3
4
5
On-Resistance vs. Gate-to-Source Voltage
- 13
0.5
VDS - Drain-to-Source Voltage (V)
ID = 600 μA
0.3
0.1
ID = 2mA
- 0.1
- 0.3
- 0.5
- 50 - 25
2
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
VGS(th) Variance (V)
25
TJ - Junction Temperature (°C)
0
25
50
75 100
TJ - Temperature (°C)
Threshold Voltage
S15-2473-Rev. A, 19-Oct-15
125
150
175
ID = 1 mA
- 13
- 14
- 14
- 15
- 15
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Breakdown Voltage vs. Junction Temperature
Document Number: 64454
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4005EY
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
ID - Drain Current (A)
10
100 µs
IDM Limited
1 ms
1
0.1
0.01
0.01
10 ms
Limited by RDS(on)*
TC = 25 °C
Single Pulse
100 ms
1 s, 10 s, DC
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 84 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2473-Rev. A, 19-Oct-15
Document Number: 64454
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4005EY
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64454.
S15-2473-Rev. A, 19-Oct-15
Document Number: 64454
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
SO-8
Ordering codes for the SQ rugged series power MOSFETs in the SO-8 package:
OLD ORDERING CODE a
NEW ORDERING CODE
SQ4005EY
-
SQ4005EY-T1_GE3
SQ4050EY
SQ4050EY-T1-GE3
SQ4050EY-T1_GE3
SQ4182EY
SQ4182EY-T1-GE3
SQ4182EY-T1_GE3
SQ4184EY
SQ4184EY-T1-GE3
SQ4184EY-T1_GE3
SQ4282EY
SQ4282EY-T1-GE3
SQ4282EY-T1_GE3
SQ4284EY
SQ4284EY-T1-GE3
SQ4284EY-T1_GE3
SQ4401EY
SQ4401EY-T1-GE3
SQ4401EY-T1_GE3
SQ4410EY
SQ4410EY-T1-GE3
SQ4410EY-T1_GE3
SQ4425EY
SQ4425EY-T1-GE3
SQ4425EY-T1_GE3
SQ4431EY
SQ4431EY-T1-GE3
SQ4431EY-T1_GE3
SQ4435EY
SQ4435EY-T1-GE3
SQ4435EY-T1_GE3
DATASHEET PART NUMBER
SQ4470EY
SQ4470EY-T1-GE3
SQ4470EY-T1_GE3
SQ4483BEEY
SQ4483BEEY-T1-GE3
SQ4483BEEY-T1_GE3
SQ4483EY
-
SQ4483EY-T1_GE3
SQ4532AEY
-
SQ4532AEY-T1_GE3
SQ4840EY
SQ4840EY-T1-GE3
SQ4840EY-T1_GE3
SQ4850EY
SQ4850EY-T1-GE3
SQ4850EY-T1_GE3
SQ4917EY
SQ4917EY-T1-GE3
SQ4917EY-T1_GE3
SQ4920EY
SQ4920EY-T1-GE3
SQ4920EY-T1_GE3
SQ4937EY
SQ4937EY-T1-GE3
SQ4937EY-T1_GE3
SQ4940AEY
SQ4940AEY-T1-GE3
SQ4940AEY-T1_GE3
SQ4946AEY
SQ4946AEY-T1-GE3
SQ4946AEY-T1_GE3
SQ4949EY
SQ4949EY-T1-GE3
SQ4949EY-T1_GE3
SQ4961EY
SQ4961EY-T1-GE3
SQ4961EY-T1_GE3
SQ9407EY
SQ9407EY-T1-GE3
SQ9407EY-T1_GE3
SQ9945BEY
SQ9945BEY-T1-GE3
SQ9945BEY-T1_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 21-Oct-15
Document Number: 66624
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000