SQ4937EY Datasheet

SQ4937EY
www.vishay.com
Vishay Siliconix
Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
- 30
RDS(on) () at VGS = - 10 V
0.075
RDS(on) () at VGS = - 4.5 V
0.145
ID (A) per leg
-5
Configuration
Dual
S1
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
Top View
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedc
• Compliant to RoHS Directive 2002/95/EC
S2
G2
D1
D2
P-Channel MOSFET P-Channel MOSFET
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free and Halogen-free
SQ4937EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
ID
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
L = 0.1 mH
Operating Junction and Storage Temperature Range
-3
IS
-3
- 20
IAS
- 10
PD
TC = 125 °C
V
-5
IDM
EAS
TC = 25 °C
UNIT
5
3.3
1.1
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
110
RthJF
45
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB
Mountb
Junction-to-Foot (Drain)
°C/W
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
S11-2113-Rev. B, 07-Nov-11
1
Document Number: 67043
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4937EY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0 V, ID = - 250 μA
- 30
-
-
VGS(th)
VDS = VGS, ID = - 250 μA
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = - 30 V
-
-
- 1.0
-
-
- 50
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = - 30 V, TJ = 125 °C
VGS = 0 V
VDS = - 30 V, TJ = 175 °C
-
-
- 150
On-State Drain Currenta
ID(on)
VGS = - 10 V
VDS- 5 V
- 15
-
-
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
gfs
VGS = - 10 V
ID = - 3.9 A
-
0.056
0.075
VGS = - 10 V
ID = - 3.9 A, TJ = 125 °C
-
-
0.109
VGS = - 10 V
ID = - 3.9 A, TJ = 175 °C
-
-
0.127
VGS = - 4.5 V
ID = - 2 A
-
0.119
0.145
VDS = - 15 V, ID = - 3.9 A
-
6
-
-
384
480
-
84
105
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
56
70
Total Gate Chargec
Qg
-
9.5
15
Gate-Source Chargec
Qgs
-
1.7
-
Gate-Drain
Chargec
Gate Resistance
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VGS = - 10 V
VDS = - 25 V, f = 1 MHz
VDS = - 15 V, ID = - 4.9 A
Qgd
pF
nC
-
2.3
-
3.5
-
10.5
td(on)
-
6
9
tr
-
8
12
-
15
23
-
8
12
-
-
- 20
A
-
- 0.85
- 1.2
V
f = 1 MHz
Rg
td(off)
VDD = - 15 V, RL = 15 
ID  - 1 A, VGEN = - 10 V, Rg = 1 
tf

ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 3 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2113-Rev. B, 07-Nov-11
2
Document Number: 67043
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4937EY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
20
20
VGS = 10 V thru 6 V
16
ID - Drain Current (A)
ID - Drain Current (A)
16
VGS = 5 V
12
8
VGS = 4 V
12
8
TC = 25 °C
4
4
TC = 125 °C
TC = - 55 °C
VGS = 3 V
0
0
2
4
6
8
0
10
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
10
4
8
gfs - Transconductance (S)
ID - Drain Current (A)
0
3
TC = 25 °C
2
1
10
TC = - 55 °C
TC = 25 °C
6
TC = 125 °C
4
2
TC = 125 °C
TC = - 55 °C
0
0
0
1
2
3
4
0
5
1
VGS - Gate-to-Source Voltage (V)
3
4
5
Transconductance
Transfer Characteristics
800
0.5
0.4
600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
2
ID - Drain Current (A)
VGS = 4.5 V
0.3
0.2
Ciss
400
Coss
200
0.1
VGS = 10 V
Crss
0
0.0
0
4
8
12
16
0
20
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
S11-2113-Rev. B, 07-Nov-11
5
3
Document Number: 67043
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4937EY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
10
1.7
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 3.9 A
ID = 4.9 A
VDS = 15 V
8
6
4
VGS = 10 V
1.4
VGS = 4.5 V
1.1
0.8
2
0.5
- 50 - 25
0
0
2
4
6
8
10
0
Qg - Total Gate Charge (nC)
75
100
125
150
175
On-Resistance vs. Junction Temperature
100
0.5
10
0.4
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
50
TJ - Junction Temperature (°C)
Gate Charge
TJ = 150 °C
1
0.1
25
TJ = 25 °C
0.01
0.3
0.2
TJ = 150 °C
0.1
TJ = 25 °C
0.001
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
8
10
On-Resistance vs. Gate-to-Source Voltage
1.0
VDS - Drain-to-Source Voltage (V)
- 30
0.7
VGS(th) Variance (V)
6
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
ID = 250 μA
0.4
ID = 5 mA
0.1
- 0.2
- 0.5
- 50 - 25
4
0
25
50
75
100
125
150
ID = 1 mA
- 34
- 36
- 38
- 40
- 50 - 25
175
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
TJ - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Threshold Voltage
S11-2113-Rev. B, 07-Nov-11
- 32
4
Document Number: 67043
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4937EY
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
Limited by RDS(on)*
0.1
0.01
0.01
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
100 ms
1s
10 s, DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
t1
t2
10- 4
10- 3
4. Surface Mounted
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2113-Rev. B, 07-Nov-11
5
Document Number: 67043
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4937EY
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -1
10 -2
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67043.
S11-2113-Rev. B, 07-Nov-11
6
Document Number: 67043
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
SO-8
Ordering codes for the SQ rugged series power MOSFETs in the SO-8 package:
OLD ORDERING CODE a
NEW ORDERING CODE
SQ4005EY
-
SQ4005EY-T1_GE3
SQ4050EY
SQ4050EY-T1-GE3
SQ4050EY-T1_GE3
SQ4182EY
SQ4182EY-T1-GE3
SQ4182EY-T1_GE3
SQ4184EY
SQ4184EY-T1-GE3
SQ4184EY-T1_GE3
SQ4282EY
SQ4282EY-T1-GE3
SQ4282EY-T1_GE3
SQ4284EY
SQ4284EY-T1-GE3
SQ4284EY-T1_GE3
SQ4401EY
SQ4401EY-T1-GE3
SQ4401EY-T1_GE3
SQ4410EY
SQ4410EY-T1-GE3
SQ4410EY-T1_GE3
SQ4425EY
SQ4425EY-T1-GE3
SQ4425EY-T1_GE3
SQ4431EY
SQ4431EY-T1-GE3
SQ4431EY-T1_GE3
SQ4435EY
SQ4435EY-T1-GE3
SQ4435EY-T1_GE3
DATASHEET PART NUMBER
SQ4470EY
SQ4470EY-T1-GE3
SQ4470EY-T1_GE3
SQ4483BEEY
SQ4483BEEY-T1-GE3
SQ4483BEEY-T1_GE3
SQ4483EY
-
SQ4483EY-T1_GE3
SQ4532AEY
-
SQ4532AEY-T1_GE3
SQ4840EY
SQ4840EY-T1-GE3
SQ4840EY-T1_GE3
SQ4850EY
SQ4850EY-T1-GE3
SQ4850EY-T1_GE3
SQ4917EY
SQ4917EY-T1-GE3
SQ4917EY-T1_GE3
SQ4920EY
SQ4920EY-T1-GE3
SQ4920EY-T1_GE3
SQ4937EY
SQ4937EY-T1-GE3
SQ4937EY-T1_GE3
SQ4940AEY
SQ4940AEY-T1-GE3
SQ4940AEY-T1_GE3
SQ4946AEY
SQ4946AEY-T1-GE3
SQ4946AEY-T1_GE3
SQ4949EY
SQ4949EY-T1-GE3
SQ4949EY-T1_GE3
SQ4961EY
SQ4961EY-T1-GE3
SQ4961EY-T1_GE3
SQ9407EY
SQ9407EY-T1-GE3
SQ9407EY-T1_GE3
SQ9945BEY
SQ9945BEY-T1-GE3
SQ9945BEY-T1_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 21-Oct-15
Document Number: 66624
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
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Document Number: 72606
Revision: 21-Jan-08
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000