SQ4840EY www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A) 20.7 Configuration • TrenchFET® Power MOSFET • AEC-Q101 Qualified • 100 % Rg and UIS Tested Single • Compliant to RoHS Directive 2002/95/EC D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ORDERING INFORMATION Package SO-8 Lead (Pb)-free and Halogen-free SQ4840EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH Operating Junction and Storage Temperature Range 12 IS 6.5 82 IAS 30 PD TC = 125 °C V 20.7 IDM EAS TC = 25 °C UNIT 45 7.1 2.4 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 85 RthJF 21 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountb Junction-to-Foot (Drain) °C/W Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). S11-2109 Rev. D, 31-Oct-11 1 Document Number: 68669 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4840EY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VGS = 0 , ID = 250 μA 40 - - VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductanceb VDS VGS(th) RDS(on) - - ± 100 VGS = 0 V VDS = 40 V - - 1.0 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 VGS = 10 V VDS5 V 30 - - VGS = 10 V ID = 14 A - 0.0075 0.009 VGS = 10 V ID = 14 A, TC = 125 °C - - 0.014 VGS = 10 V ID = 14 A, TC = 175 °C - - 0.018 VGS = 4.5 V ID = 12 A - 0.010 0.012 - 45 - - 1950 2440 gfs VDS = 15 V, ID = 14 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss - 505 630 Reverse Transfer Capacitance Crss - 220 280 Total Gate Chargec Qg - 41 62 - 5.5 - - 8.7 - 0.2 - 1.6 - 14 21 - 11 17 - 45 68 - 17 26 - - 82 A - 0.75 1.1 V Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Qgs Fall Timec Source-Drain Diode Ratings and VDS = 20 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 14 A Qgd f = 1 MHz Rg td(on) tr Timec VGS = 0 V td(off) VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 6 tf pF nC ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 2.8 A, VGS = 0 Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2109 Rev. D, 31-Oct-11 2 Document Number: 68669 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4840EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 50 V GS = 10 V thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 V GS = 3 V 10 30 20 T C = 25 °C 10 T C = 125 °C T C = - 55 °C 0 0 0 2 4 6 8 V DS - Drain-to-Source Voltage (V) 0 10 1 2 3 4 V GS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 80 0.025 64 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 5 T C = - 55 °C 48 T C = 25 °C 32 T C = 125 °C 16 0 0.020 0.015 V GS = 4.5 V 0.010 V GS = 10 V 0.005 0.000 0 4 8 12 16 20 24 28 ID - Drain Current (A) 0 10 20 30 ID - Drain Current (A) 40 50 Transconductance On-Resistance vs. Drain Current 10 3000 ID = 14 A VGS - Gate-to-Source Voltage (V) 2500 C - Capacitance (pF) Ciss 2000 1500 Coss 1000 500 8 V DS = 20 V 6 4 2 Crss 0 0 0 10 20 30 V DS - Drain-to-Source Voltage (V) 40 0 10 15 20 25 30 35 Qg - Total Gate Charge (nC) 40 45 Gate Charge Capacitance S11-2109 Rev. D, 31-Oct-11 5 3 Document Number: 68669 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4840EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 14 A V GS = 10 V 10 1.7 1.4 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 2.0 V GS = 4.5 V 1.1 T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 0.001 0.0 175 0.2 T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature 1.2 Source Drain Diode Forward Voltage 0.10 0.4 0.08 0 VGS(th) Variance (V) R DS(on) - On-Resistance (Ω) 0.4 0.6 0.8 1.0 V SD - Source-to-Drain Voltage (V) 0.06 0.04 TJ = 125 °C - 0.4 ID = 5 mA - 0.8 0.02 ID = 250 μA TJ = 25 °C 0 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 9 - 1.2 - 50 10 - 25 0 On-Resistance vs. Gate-to-Source Voltage 25 50 75 100 T J - Temperature (°C) 125 150 175 Threshold Voltage VDS - Drain-to-Source Voltage (V) 54 ID = 1 mA 52 50 48 46 44 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature S11-2109 Rev. D, 31-Oct-11 4 Document Number: 68669 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4840EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited 100 ID - Drain Current (A) Limited by RDS(on)* 100 µs 10 1 ms 10 ms 1 100 ms 1s 10 s, DC 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S11-2109 Rev. D, 31-Oct-11 5 Document Number: 68669 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4840EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68669. S11-2109 Rev. D, 31-Oct-11 6 Document Number: 68669 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix SO-8 Ordering codes for the SQ rugged series power MOSFETs in the SO-8 package: OLD ORDERING CODE a NEW ORDERING CODE SQ4005EY - SQ4005EY-T1_GE3 SQ4050EY SQ4050EY-T1-GE3 SQ4050EY-T1_GE3 SQ4182EY SQ4182EY-T1-GE3 SQ4182EY-T1_GE3 SQ4184EY SQ4184EY-T1-GE3 SQ4184EY-T1_GE3 SQ4282EY SQ4282EY-T1-GE3 SQ4282EY-T1_GE3 SQ4284EY SQ4284EY-T1-GE3 SQ4284EY-T1_GE3 SQ4401EY SQ4401EY-T1-GE3 SQ4401EY-T1_GE3 SQ4410EY SQ4410EY-T1-GE3 SQ4410EY-T1_GE3 SQ4425EY SQ4425EY-T1-GE3 SQ4425EY-T1_GE3 SQ4431EY SQ4431EY-T1-GE3 SQ4431EY-T1_GE3 SQ4435EY SQ4435EY-T1-GE3 SQ4435EY-T1_GE3 DATASHEET PART NUMBER SQ4470EY SQ4470EY-T1-GE3 SQ4470EY-T1_GE3 SQ4483BEEY SQ4483BEEY-T1-GE3 SQ4483BEEY-T1_GE3 SQ4483EY - SQ4483EY-T1_GE3 SQ4532AEY - SQ4532AEY-T1_GE3 SQ4840EY SQ4840EY-T1-GE3 SQ4840EY-T1_GE3 SQ4850EY SQ4850EY-T1-GE3 SQ4850EY-T1_GE3 SQ4917EY SQ4917EY-T1-GE3 SQ4917EY-T1_GE3 SQ4920EY SQ4920EY-T1-GE3 SQ4920EY-T1_GE3 SQ4937EY SQ4937EY-T1-GE3 SQ4937EY-T1_GE3 SQ4940AEY SQ4940AEY-T1-GE3 SQ4940AEY-T1_GE3 SQ4946AEY SQ4946AEY-T1-GE3 SQ4946AEY-T1_GE3 SQ4949EY SQ4949EY-T1-GE3 SQ4949EY-T1_GE3 SQ4961EY SQ4961EY-T1-GE3 SQ4961EY-T1_GE3 SQ9407EY SQ9407EY-T1-GE3 SQ9407EY-T1_GE3 SQ9945BEY SQ9945BEY-T1-GE3 SQ9945BEY-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 21-Oct-15 Document Number: 66624 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000