Si1012CR Datasheet

Si1012CR
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
RDS(on) ()
ID (mA)
0.396 at VGS = 4.5 V
600
0.456 at VGS = 2.5 V
500
0.546 at VGS = 1.8 V
350
1.100 at VGS = 1.5 V
50
Qg (Typ.)
0.75
•
•
•
•
TrenchFET® Power MOSFET: 1.2 V Rated
100 % Rg Tested
Gate-Source ESD Protected: 1000 V
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load/Power Switching for Portable Devices
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
SC-75A
G
1
3
S
D
2
Marking Code: K
Top View
Ordering Information:
Si1012CR-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 25 °C
TA = 70 °C
IDM
IS
PD
Unit
V
0.63a, b
0.5a, b
2
ID
TJ, Tstg
Operating Junction and Storage Temperature Range
Limit
20
±8
A
0.2a, b
0.24a, b
0.15a, b
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t 5 s
Steady State
Maximum Junction-to-Ambientb
RthJA
Typical
440
540
Maximum
530
650
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
For technical questions, contact: [email protected]
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1012CR
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
IGSS
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
gfs
Forward Transconductance
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
tr
Rise Time
td(off)
Turn-Off Delay Time
0.4
1
± 30
VDS = 0 V, VGS = ± 4.5 V
±1
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 85 °C
VDS =  5 V, VGS = 4.5 V
V
µA
10
2
A
VGS = 4.5 V, ID = 0.6 A
0.330
0.396
VGS = 2.5 V, ID = 0.3 A
0.380
0.456
VGS = 1.8 V, ID = 0.3 A
0.420
0.546
VGS = 1.5 V, ID = 0.05 A
0.720
1.100
VDS = 10 V, ID = 0.5 A
7.5

S
43
VDS = 10 V, VGS = 0 V, f = 1 MHz
14
VDS = 10 V, VGS = 8 V, ID = 0.6 A
1.3
2
0.75
1.2
pF
8
VDS = 10 V, VGS = 4.5 V, ID = 0.6 A
0.15
nC
0.13
f = 1 MHz
VDD = 10 V, RL = 20 
ID  0.5 A, VGEN = 4.5 V, Rg = 1 
tf
Fall Time
mV/°C
- 1.8
VDS = 0 V, VGS = ± 8 V
td(on)
Turn-On Delay Time
17
ID = 250 µA
VDS = VGS, ID = 250 µA
V
2.4

12.2
24.4
11
20
16
24
26
39
11
20
0.8
1.2
V
10
15
ns
2
4
nC
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
Body Diode Voltage
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
2
IS = 0.5 A
IF = 0.5 A, dI/dt = 100 A/µs
5
5
A
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1012CR
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.0E-04
0.8
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
1.0E-05
0.6
TJ = 150 °C
1.0E-06
0.4
TJ = 25 °C
TJ = 25 °C
1.0E-07
0.2
1.0E-08
1.0E-09
0
0
2
4
6
8
10
VGS - Gate-Source Voltage (V)
12
0
14
4
7
11
14
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
0.5
2
VGS = 5 V thru 2 V
0.4
ID - Drain Current (A)
ID - Drain Current (A)
1.5
VGS = 1.5 V
1
0.3
TC = 25 °C
0.2
0.5
0.1
TC = 125 °C
VGS = 1 V
TC = - 55 °C
0
0
0
0.5
1
1.5
2
0
0.6
0.9
1.2
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.80
1.5
60
Ciss
VGS = 1.8 V
45
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.3
VDS - Drain-to-Source Voltage (V)
0.60
VGS = 2.5 V
0.40
30
Coss
15
VGS = 4.5 V
Crss
0.20
0
0
0.5
1
1.5
ID - Drain Current (A)
2
0
5
10
15
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
For technical questions, contact: [email protected]
20
Capacitance
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1012CR
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
1.6
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 0.6 A
VDS = 5 V
6
VDS = 10 V
4
VDS = 16 V
2
ID = 0.5 A
VGS = 4.5 V
1.4
1.2
1.0
0.8
VGS = 2.5 V
0
0
0.5
1
0.6
- 50
1.5
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
10
0.8
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 0.5 A
TJ = 150 °C
1
TJ = 25 °C
0.6
TJ = 125 °C
0.4
TJ = 25 °C
0.2
0
0.1
0.0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
1.5
0
Soure-Drain Diode Forward Voltage
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
3
0.75
ID = 250 μA
2.4
Power (W)
VGS(th) (V)
0.65
0.55
1.8
1.2
0.45
0.6
0.35
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
TJ - Temperature (°C)
Threshold Voltage
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4
1
Time (s)
10
100
Single Pulse Power, Junction-to-Ambient
For technical questions, contact: [email protected]
Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si1012CR
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.24
BVDSS Limited
0.18
1
Power (W)
ID - Drain Current (A)
Limited by R DS(on)*
1 ms
10 ms
0.12
0.1
0.06
100 ms
TC = 25 °C
Single Pulse
0.01
0.1
1s
10 s, DC
0
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
0
Safe Operating Area, Junction-to-Ambient
25
50
75
100
125
TA - Ambient Temperature (°C)
150
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 650 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
4. Surface Mounted
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67519.
Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
For technical questions, contact: [email protected]
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
SC-75A: 3 Leads
L2
A
2
D
1
D bbb
D
e2
2X
D
3
L1
L
B1(b1)
3
e1
3
E/2
1
2
E
E1
1
1
bbb
D
1
2
C
bbb C
D
4
ddd M
C
B
3
2X
e3
B1
b1
2XB1
A– B
B
B
2X
D
c1
C
With Tin Planting
bbb
D
Section B-B 5
A
A2
Base Metal
C
4X
Seating Plane
A1
D
DWG: 5868
Notes
Dimensions in millimeters will govern.
1.Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2.Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
3.Datums A, B and D to be determined 0.10 mm from the lead tip.
4.Terminal positions are shown for reference only.
5.These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
DIMENSIONS
TOLERANCES
aaa
0.10
bbb
0.10
ccc
0.10
ddd

C15-1445-Rev. F, 23-Nov-15
0.10
DIM.
MILLIMETERS
MIN.
NOM.
MAX.
A
-
-
0.80
A1
0.00
-
0.10
NOTE
A2
0.65
0.70
0.80
B1
0.19
-
0.24
b1
0.17
-
0.21
c
0.13
-
0.15
c1
0.10
-
0.12
5
D
1.48
1.575
1.68
1, 2
E
1.50
1.60
1.70
E1
0.66
0.76
0.86
e1
0.50 BSC
e2
1.00 BSC
e3
L
5
5
1, 2
0.50 BSC
0.15
0.205
L1
0.40 ref.
L2
0.15 BSC
0.30
q
0°
-
8°
q1
4°
-
10°
Document Number: 71348
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead
0.014
0.031
(0.798)
0.020
(0.503)
(1.803)
0.071
(0.356)
0.264
(0.660)
0.054
(1.372)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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APPLICATION NOTE
Document Number: 72603
Revision: 21-Jan-08
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000