Si1034CX Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET® Power MOSFET 100 % Rg Tested Gate-Source ESD Protected: 1000 V Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load/Power Switching for Portable Devices • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits SC-89 1 G1 2 D2 3 6 5 4 D1 Marking Code 4 G2 XX YY S1 Lot Traceability and Date Code S2 Part # Code Top View Ordering Information: Si1034CX-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C IDM IS PD Unit V 0.61a, b 0.49a, b 2 ID TJ, Tstg Operating Junction and Storage Temperature Range Limit 20 ±8 A 0.18a, b 0.22a, b 0.14a, b - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Symbol t 5 s Maximum Junction-to-Ambientb Steady State RthJA Typ. Max. 470 565 560 675 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. Document Number: 67468 S13-1614-Rev. C, 29-Jul-13 For technical support, please contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1034CX Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductance RDS(on) gfs V 17 mV/°C - 1.8 0.4 1 VDS = 0 V, VGS = ± 8 V ± 30 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85 °C VDS = 5 V, VGS = 4.5 V V µA 3 2 A VGS = 4.5 V, ID = 0.5 A 0.330 0.396 VGS = 2.5 V, ID = 0.2 A 0.380 0.456 VGS = 1.8 V, ID = 0.2 A 0.420 0.546 VGS = 1.5 V, ID = 0.05 A 0.505 0.760 VDS = 10 V, ID = 0.5 A 7.5 VDS = 10 V, VGS = 0 V, f = 1 MHz 14 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 43 VDS = 10 V, VGS = 8 V, ID = 0.6 A VDS = 10 V, VGS = 4.5 V, ID = 0.6 A tr Turn-Off Delay Time td(off) Fall Time 1.3 2 0.75 1.2 0.15 nC 0.13 f = 1 MHz 2.4 td(on) Rise Time pF 8 VDD = 10 V, RL = 20 ID 0.5 A, VGEN = 4.5 V, Rg = 1 tf 12.2 24.4 11 20 16 24 26 39 11 20 0.8 1.2 V 10 15 ns 2 4 nC ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 2 IS = 0.5 A IF = 0.5 A, dI/dt = 100 A/µs 5 5 A ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical support, please contact: [email protected] Document Number: 67468 S13-1614-Rev. C, 29-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1034CX Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0E-04 0.8 TJ = 150 °C IGSS - Gate Current (A) IGSS - Gate Current (mA) 1.0E-05 0.6 1.0E-06 0.4 TJ = 25 °C TJ = 25 °C 1.0E-07 0.2 1.0E-08 0 0 2 4 6 8 10 VGS - Gate-Source Voltage (V) 12 14 1.0E-09 0 Gate Current vs. Gate-Source Voltage 4 7 11 VGS - Gate-to-Source Voltage (V) 14 Gate Current vs. Gate-Source Voltage 2 0.5 VGS = 5 V thru 2 V 0.4 ID - Drain Current (A) ID - Drain Current (A) 1.5 VGS = 1.5 V 1 0.3 TC = 25 °C 0.2 0.5 0.1 TC = 125 °C VGS = 1 V TC = - 55 °C 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 2 0 0.3 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 60 0.80 Ciss VGS = 1.8 V 45 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VGS = 1.5 V 0.60 VGS = 4.5 V 0.40 30 Coss 15 VGS = 10 V Crss 0 0.20 0 0.5 1 ID - Drain Current (A) 1.5 On-Resistance vs. Drain Current Document Number: 67468 S13-1614-Rev. C, 29-Jul-13 2 0 5 10 15 VDS - Drain-to-Source Voltage (V) 20 Capacitance For technical support, please contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1034CX Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.6 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 0.6 A VDS = 5 V 6 VDS = 10 V 4 VDS = 16 V 2 ID = 0.5 A VGS = 4.5 V 1.4 1.2 1.0 0.8 VGS = 2.5 V 0 0 0.5 1 0.6 - 50 1.5 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.8 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 0.5 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.0 0.6 TJ = 125 °C 0.4 TJ = 25 °C 0.2 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 1.5 0 Soure-Drain Diode Forward Voltage 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 On-Resistance vs. Gate-to-Source Voltage 2.7 0.75 ID = 250 μA 2.25 0.65 Power (W) VGS(th) (V) 1.8 0.55 1.35 0.9 0.45 0.45 0.35 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 125 150 0 0.01 0.1 1 Time (s) 10 100 Single Pulse Power, Junction-to-Ambient For technical support, please contact: [email protected] Document Number: 67468 S13-1614-Rev. C, 29-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1034CX Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.24 10 0.18 BVDSS Limited 100 μs 1 Power (W) ID - Drain Current (A) Limited by RDS(on)* 1 ms 10 ms 0.12 0.1 0.06 100 ms TC = 25 °C Single Pulse 1s 10 s, DC 0.01 0.1 0 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 Safe Operating Area, Junction-to-Ambient 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67468. Document Number: 67468 S13-1614-Rev. C, 29-Jul-13 For technical support, please contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Revision: 11-Aug-14 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 0.18 c 0.10 0.14 D 1.50 1.60 1.70 E 1.50 1.60 1.70 1.25 E1 1.15 1.20 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Document Number: 71612 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000