Si1031R/X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 8 at VGS = - 4.5 V - 150 12 at VGS = - 2.5 V - 125 15 at VGS = - 1.8 V - 100 20 at VGS = - 1.5 V - 30 • Halogen-free According to IEC 61249-2-21 Definition • High-Side Switching • Low On-Resistance: 8 • Low Threshold: 0.9 V (typ.) • Fast Switching Speed: 45 ns • TrenchFET® Power MOSFETs: 1.5 V Rated • ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers SC-75A or SC-89 G 1 SC-75A (SOT - 416): Si1031R SC-89 (SOT - 490): Si1031X 3 S BENEFITS D • • • • • Marking Code: H 2 Top View Ordering Information: Si1031R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1031X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free) Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Si1031R Parameter Symbol 5s Si1031X Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±6 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Currenta - 150 - 110 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS PD 5s Steady State Unit V - 140 - 165 - 100 - 150 - 500 - 155 - 125 - 600 - 250 - 200 - 340 - 240 280 250 340 300 145 130 170 150 mA mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface mounted on FR4 board. Document Number: 71171 S10-2544-Rev. D, 08-Nov-10 www.vishay.com 1 Si1031R/X Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Typ.a Max. Unit - 1.2 V VDS = 0 V, VGS = ± 2.8 V ± 0.5 ± 1.0 VDS = 0 V, VGS = ± 4.5 V ± 1.0 ± 2.0 VDS = - 16 V, VGS = 0 V -1 - 500 nA - 10 µA Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = - 250 µA - 0.40 Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS = - 16 V, VGS = 0 V, TJ = 85 °C VDS = - 5 V, VGS = - 4.5 V RDS(on) - 200 mA VGS = - 4.5 V, ID = - 150 mA 8 VGS = - 2.5 V, ID = - 125 mA 12 VGS = - 1.8 V, ID = - 100 mA 15 VGS = - 1.5 V, ID = - 30 mA Forward Transconductancea Diode Forward Voltagea gfs VDS = - 10 V, ID = 150 mA VSD IS = - 150 mA, VGS = 0 V µA 20 0.4 S - 1.2 V Dynamicb Qg Total Gate Charge 1500 Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) tr Rise Time td(off) Turn-Off Delay Time VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA pC 150 450 55 VDD = - 10 V, RL = 65 ID - 150 mA, VGEN = - 4.5 V, Rg = 10 30 tf Fall Time ns 60 30 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.5 500 2V VGS = 5 V thru 2.5 V TJ = - 55 °C 25 °C 400 I D - Drain Current (mA) ID - Drain Current (A) 0.4 1.8 V 0.3 0.2 0.1 125 °C 300 200 100 0.0 0 www.vishay.com 2 1 2 3 4 5 6 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 3.0 Document Number: 71171 S10-2544-Rev. D, 08-Nov-10 Si1031R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 25 120 VGS = 0 V f = 1 MHz 100 20 VGS = 2.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VGS = 1.8 V 15 10 Ciss 80 60 40 VGS = 4.5 V Coss 5 20 Crss 0 0 0 200 400 600 800 1000 0 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (mA) Capacitance On-Resistance vs. Drain Current 5 1.6 VDS = 10 V ID = 150 mA 4 1.4 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 12 3 2 1 0 0.0 VGS = 4.5 V ID = 150 mA 1.2 VGS = 1.8 V ID = 125 mA 1.0 0.8 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.6 - 50 1.6 - 25 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 1000 50 RDS(on) - On-Resistance (Ω) IS - Source Current (mA) TJ = 125 °C 100 TJ = 25 °C TJ = - 55 °C 10 40 ID = 150 mA 30 20 10 ID = 125 mA 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Surge-Drain Diode Forward Voltage Document Number: 71171 S10-2544-Rev. D, 08-Nov-10 1.4 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si1031R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 3.0 0.3 2.5 0.2 VGS(th) Variance (V) ID = 0.25 mA 2.0 IGSS - (µA) 0.1 0.0 1.5 - 0.1 1.0 - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 100 0.0 -50 125 VGS = 2.8 V -25 25 50 75 100 125 TJ - Temperature (° C) TJ - Temperature (° C) Threshold Voltage Variance vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 0 IGSS vs. Temperature 0 -1 -2 -3 -4 -5 -6 -7 -50 -25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 500 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1031R Only) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71171. www.vishay.com 4 Document Number: 71171 S10-2544-Rev. D, 08-Nov-10 Package Information www.vishay.com Vishay Siliconix SC-75A: 3 Leads L2 A 2 D 1 D bbb D e2 2X D 3 L1 L B1(b1) 3 e1 3 E/2 1 2 E E1 1 1 bbb D 1 2 C bbb C D 4 ddd M C B 3 2X e3 B1 b1 2XB1 A– B B B 2X D c1 C With Tin Planting bbb D Section B-B 5 A A2 Base Metal C 4X Seating Plane A1 D DWG: 5868 Notes Dimensions in millimeters will govern. 1.Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 2.Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 3.Datums A, B and D to be determined 0.10 mm from the lead tip. 4.Terminal positions are shown for reference only. 5.These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. DIMENSIONS TOLERANCES aaa 0.10 bbb 0.10 ccc 0.10 ddd C15-1445-Rev. F, 23-Nov-15 0.10 DIM. MILLIMETERS MIN. NOM. MAX. A - - 0.80 A1 0.00 - 0.10 NOTE A2 0.65 0.70 0.80 B1 0.19 - 0.24 b1 0.17 - 0.21 c 0.13 - 0.15 c1 0.10 - 0.12 5 D 1.48 1.575 1.68 1, 2 E 1.50 1.60 1.70 E1 0.66 0.76 0.86 e1 0.50 BSC e2 1.00 BSC e3 L 5 5 1, 2 0.50 BSC 0.15 0.205 L1 0.40 ref. L2 0.15 BSC 0.30 q 0° - 8° q1 4° - 10° Document Number: 71348 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead 0.014 0.031 (0.798) 0.020 (0.503) (1.803) 0.071 (0.356) 0.264 (0.660) 0.054 (1.372) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72603 Revision: 21-Jan-08 www.vishay.com 19 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000