Si4931DY Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 8.9 0.022 at VGS = - 2.5 V - 8.1 0.028 at VGS = - 1.8 V - 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Advanced High Cell Density Process • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4931DY-T1-E3 (Lead (Pb)-free) Si4931DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 6.7 - 7.1 - 5.4 - 30 - 1.7 - 0.9 2.0 1.1 1.3 0.7 TJ, Tstg Operating Junction and Storage Temperature Range V - 8.9 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 46 62.5 80 110 24 32 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72379 S09-0704-Rev. C, 27-Apr-09 www.vishay.com 1 Si4931DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.4 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 350 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistance a Diode Forward Voltage a V nA VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 55 °C -5 VDS = - 5 V, VGS = - 4.5 V µA - 30 A VGS = - 4.5 V, ID = - 8.9 A 0.0145 0.018 VGS = - 2.5 V, ID = - 8.1 A 0.018 0.022 VGS = - 1.8 V, ID = - 3.6 A 0.023 0.028 gfs VDS = - 6 V, ID = - 8.9 A 26 VSD IS = - 1.7 A, VGS = 0 V - 0.7 - 1.2 34.5 52 RDS(on) Forward Transconductancea - 1.0 ± 100 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time VDS = - 6 V, VGS = - 4.5 V, ID = - 8.9 A 9.6 9 25 40 46 70 VDD = - 6 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω td(off) Turn-Off Delay Time Ω Rg td(on) tr Rise Time nC 5.1 Fall Time tf Source-Drain Reverse Recovery Time trr IF = - 1.7 A, dI/dt = 100 A/µs 230 345 155 235 128 200 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 30 30 VGS = 5 V thru 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 1.5 V 18 12 TC = 125 °C 6 6 25 °C - 55 °C 1V 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 Document Number: 72379 S09-0704-Rev. C, 27-Apr-09 Si4931DY Vishay Siliconix 0.10 5000 0.08 4000 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 0.06 0.04 VGS = 1.8 V VGS = 2.5 V Ciss 3000 2000 Coss Crss 1000 0.02 VGS = 4.5 V 0.00 0 0 6 12 18 24 30 0 6 8 10 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 12 1.4 VGS = 4.5 V ID = 8.9 A VDS = 6 V ID = 8.9 A 4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 4 On-Resistance vs. Drain Current 5 3 2 1.2 1.0 0.8 1 0.6 - 50 0 0 10 20 30 40 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 30 150 0.10 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 2 TJ = 150 °C 10 TJ = 25 °C 0.08 ID = 8.9 A 0.06 ID = 3.6 A 0.04 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72379 S09-0704-Rev. C, 27-Apr-09 1.4 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si4931DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 0.4 30 0.3 24 0.2 Power (W) VGS(th) Variance (V) ID = 350 µA 0.1 18 12 0.0 6 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10 - 2 150 10 - 1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* 600 IDM Limited 10 ID - Drain Current (A) 100 P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 P(t) = 10 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 80 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72379 S09-0704-Rev. C, 27-Apr-09 Si4931DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72379. Document Number: 72379 S09-0704-Rev. C, 27-Apr-09 www.vishay.com 5 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000