Si1071X Datasheet

Si1071X
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)
0.167 at VGS = - 10 V
0.96
- 30
0.188 at VGS = - 4.5 V
0.90
0.244 at VGS = - 2.5 V
0.79
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
3.25
APPLICATIONS
• Load Switch for Portable Devices
SC-89 (6-LEADS)
1
6
D
D
2
5
D
G
3
4
S
S
Marking Code
Z
XX
YY
D
Lot Traceability
and Date Code
G
Part # Code
Top View
D
P-Channel MOSFET
Ordering Information: Si1071X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipationa
TA = 25 °C
TA = 25 °C
TA = 70 °C
V
- 0.96b, c
ID
- 0.76b, c
IDM
-8
IS
- 0.2b, c
A
0.236b, c
PD
W
0.151b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Symbol
t 5 s
Steady State
RthJA
Typical
Maximum
440
530
540
650
Unit
°C/W
Notes:
a. Maximum under steady state conditions is 650 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
Document Number: 74321
S10-2542-Rev. C, 08-Nov-10
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Si1071X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
V
- 32.07
ID = - 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
VDS = - 30 V, VGS = 0 V
-1
nA
VDS = - 30 V, VGS = 0 V, TJ = 85 °C
- 10
µA
Gate-Source Leakage
IDSS
Zero Gate Voltage Drain Current
a
ID(on)
On-State Drain Current
VDS =  5 V, VGS = - 10 V
VGS = - 10 V, ID = - 0.96 A
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductance
gfs
3.02
- 0.7
- 1.45
-8
V
A
0.139
0.167
VGS = - 4.5 V, ID = - 0.9 A
0.147
0.177
VGS = - 2.5 V, ID = - 0.79 A
0.195
0.244
VDS = - 15 V, ID = - 0.96 A
4.25

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
315
VDS = - 15 V, VGS = 0 V, f = 1 MHz
pF
45
VDS = - 15 V, VGS = - 4.5 V, ID = - 0.96 A
VDS = - 15 V, VGS = - 10 V, ID = - 0.96 A
4.43
6.64
8.87
13.3
0.83
nC
1.57
f = 1 MHz
td(on)
tr
60
VDD = - 15 V, RL = 19.74 
ID  - 0.76 A, VGEN = - 10 V, Rg = 1 
9.8
14.7
3.8
5.7

12
18
18
27
tf
7
10.5
td(on)
13
20
25
38
36
54
14
21
8
A
0.8
1.2
V
nC
td(off)
tr
td(off)
VDD = - 15 V, RL = 20.27 
ID  - 0.74 A, VGEN = - 4.5 V, Rg = 1 
tf
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery
trr
12.7
19.05
Qrr
5.7
8.6
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IS = - 0.63 A
IF = - 0.7 A, dI/dt = 100 A/µs
8.9
ns
3.8
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74321
S10-2542-Rev. C, 08-Nov-10
Si1071X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
8
2.0
VGS = 10 V thru 4 V
1.6
I D - Drain Current (A)
I D - Drain Current (A)
6
VGS = 3 V
4
VGS = 2 V
2
TC = 25 °C
1.2
0.8
TC = 125 °C
TC = - 55 °C
0.4
0
0.0
VGS = 1 V
0.6
1.2
1.8
2.4
0.0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics Curves vs. Temp.
0.35
600
VGS = 2.5 V
500
0.25
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.30
0.20
VGS = 4.5 V
0.15
VGS = 10 V
0.10
400
Ciss
300
200
Coss
100
0.05
Crss
0.00
0
0
3
6
9
12
15
0
12
18
24
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
30
1.6
10
ID = 0.96 A
VGS = 10 V, ID = 0.96 A
VGS = 4.5 V, ID = 0.91 A
1.4
VDS = 15 V
6
VDS = 24 V
4
(Normalized)
8
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
6
VGS = 2.5 V
ID = 0.79 A
1.2
1.0
0.8
2
0
0
2
4
6
8
10
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74321
S10-2542-Rev. C, 08-Nov-10
150
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Si1071X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
0.36
ID = 0.96 A
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.30
1
TJ = 25 °C
TJ = 150 °C
0.1
0.24
TA = 125 °C
0.18
0.12
TA = 25 °C
0.06
0.01
0
0.2
0.4
0.6
0.8
1.0
0.00
1.2
0
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
5
1.3
1.2
4
1.0
Power (W)
VGS(th) (V)
1.1
ID = 250 µA
0.9
0.8
3
2
0.7
1
0.6
0.5
- 50
0
- 25
0
25
50
75
100
125
0.01
150
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power
10
10 ms
I D - Drain Current (A)
Limited by R DS(on)*
1
100 ms
1s
10 s
0.1
DC
0.01
TA = 25 °C
Single Pulse
0.001
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74321
S10-2542-Rev. C, 08-Nov-10
Si1071X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
0.1
0.05
0.01
Notes:
0.02
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 540 °C/W
0.001
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.0001
10-4
4. Surface Mounted
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74321.
Document Number: 74321
S10-2542-Rev. C, 08-Nov-10
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Revision: 02-Oct-12
1
Document Number: 91000